Special Issue on the 2000 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsJournal of electronic materials. 2001, Vol 30, Num 6, issn 0361-5235, 241 p.Conference Proceedings

Epitaxie par jets moléculaires d'hétérostructures de semiconducteurs II-VI : CdTe/CdZnTe et CdTe/CdHgTeLentz, Geneviève; Magnea, Noël.1989, 175 p.Thesis

Croissance par épitaxie par jets moléculaires et propriétés optiques d'hétérostructures à base de CdHgTe = Molecular beam epitaxial growth and optical properties of CdHgTe-based heterostructuresUlmer, Laurent; Mariette, Henri.1992, 201 p.Thesis

Blue-green semiconductor lasersNURMIKKO, A. V; GUNSHOR, R. L.Solid state communications. 1994, Vol 92, Num 1-2, pp 113-118, issn 0038-1098Article

Two-dimensional localization of excitons in QWs formed by II-VI solid solutionsPERMOGOROV, S; KLOCHIKHIN, A; REZNITSKY, A et al.Journal of crystal growth. 2000, Vol 214-15, pp 1158-1159, issn 0022-0248Conference Paper

A reproducible route to p-ZnO films and their application in light-emitting devicesSUN, F; SHAN, C. X; LI, B. H et al.Optics letters. 2011, Vol 36, Num 4, pp 499-501, issn 0146-9592, 3 p.Article

Unified description of Cu-related luminescence processes in II-VI semiconductorsPEKA, P; SCHULZ, H.-J.Solid state communications. 1994, Vol 89, Num 3, pp 225-228, issn 0038-1098Article

Effets excitoniques dans les multipuits quantiques II-VI de CdTe/CdZnTe et CdTe/CdMnTe sous perturbations = Excitonic effects in II-VI multiple quantum wells of CdTe/CdZnTe and CdTe/CdMnTe under perturbationsPeyla, Philippe; Merle D'Aubigne, Yves.1992, 205 p.Thesis

Energy scaling of 4.3 μm room temperature Fe:ZnSe laserMYOUNG, Nosoung; MARTYSHKIN, Dmitri V; FEDOROV, Vladimir V et al.Optics letters. 2011, Vol 36, Num 1, pp 94-96, issn 0146-9592, 3 p.Article

Results of a Si/CdTe compton telescopeOONUKI, Kousuke; TANAKA, Takaaki; WATANABE, Shin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59220J.1-59220J.11, issn 0277-786X, isbn 0-8194-5927-5, 1VolConference Paper

Relationship between lattice energy and an ionic ratio in II-VI and III-V semiconductorsKOH, A. K.Physica status solidi. B. Basic research. 1998, Vol 209, Num 1, pp 25-27, issn 0370-1972Article

Optical spectra of ultrathin II-VI quantum wellsFANG YANG; HENDERSON, B; O'DONNELL, K. P et al.Solid state communications. 1993, Vol 88, Num 9, pp 687-691, issn 0038-1098Article

The analysis of methods for creating watermarks on CDsKRYUCHYN, Andriy A; PETROV, Viacheslav V; KOSTYUKEVYCH, Sergiy Al et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 56540M.1-56540M.7, issn 0277-786X, isbn 0-8194-5961-5, 1VolConference Paper

Intrinsic defects in II-VI semiconductorsWATKINS, G. D.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 338-344, issn 0022-0248Conference Paper

Transition-metal impurities in II-VI semiconductors : characterization and switching of charge statesKREISSL, J; SCHULZ, H.-J.Journal of crystal growth. 1996, Vol 161, Num 1-4, pp 239-249, issn 0022-0248Conference Paper

Model for DX centres : results for donors in II-VI semiconductorsBIERNACKI, S. W.Solid state communications. 1993, Vol 88, Num 5, pp 365-368, issn 0038-1098Article

Observation of Bunched Blinking from Individual CdSe/CdS and CdSe/ZnS Colloidal Quantum DotsQIN, Hai-Yan; SHANG, X.-J; NING, Z.-J et al.Journal of physical chemistry. C. 2012, Vol 116, Num 23, pp 12786-12790, issn 1932-7447, 5 p.Article

2008 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsJournal of electronic materials. 2009, Vol 38, Num 8, issn 0361-5235, 296 p.Conference Proceedings

Enhanced lateral photovoltaic effect observed in CdSe quantum dots embedded structure of Zn/CdSe/SiTIAN LAN; SHUAI LIU; HUI WANG et al.Optics letters. 2011, Vol 36, Num 1, pp 25-27, issn 0146-9592, 3 p.Article

ICP etching of ZnO in BCl₃/SF₆ gas mixturesNORDHEDEN, Karen J; PATHAK, Bogdan A; ALEXANDER, John L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7217, issn 0277-786X, isbn 978-0-8194-7463-6 0-8194-7463-0, 1Vol, 72170Q.1-72170Q.5Conference Paper

THz radiation from a DARC source via a laser-produced relativistic ionization frontOHATA, Nobuo; YAEGASHI, Kenta; KUN LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67720V.1-67720V.6, issn 0277-786X, isbn 978-0-8194-6932-8, 1VolConference Paper

Preparation of ZnO films in sol-gel method using novel monomersJAYATISSA, Ahalapitiya H; KUN GUO; JAYASURIYA, Ambalangodage C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 60021B.1-60021B.7, issn 0277-786X, isbn 0-8194-6026-5, 1VolConference Paper

Determination of melting points for A2B6 compoundsVASILYEVA, I. G; BELYAEVA, E. I; GIBNER, Ya. I et al.Journal of thermal analysis and calorimetry. 1998, Vol 52, Num 2, pp 403-412, issn 1388-6150Article

Status of II-VI molecular-beam epitaxy technologyWU, O. K; RAJAVEL, R. D; JENSEN, J. E et al.Materials chemistry and physics. 1996, Vol 43, Num 2, pp 103-107, issn 0254-0584Article

Doping limitations in wide gap II-VI compounds by Fermi level pinningFASCHINGER, W; FERREIRA, S; SITTER, H et al.Journal of crystal growth. 1995, Vol 151, Num 3-4, pp 267-272, issn 0022-0248Article