CROSSED-FIELD ACOUSTIC AMPLIFICATION IN NONDEGENERATE SEMICONDUCTORS IN STRONG MAGNETIC FIELDSSATISH SHARMA; THORNTON D.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4643-4647; BIBL. 28 REF.Serial Issue

ACOUSTO-ELECTRIC ABSORPTION IN NONDEGENERATE SEMICONDUCTORS.SHARMA SS; SHARMA SK.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 403-405; BIBL. 7 REF.Article

The transport of excess current carriers in an inhomogeneous semiconductor with position-dependent band gapSIKORSKI, S.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 18-26, issn 0268-1242Article

The uncertainty principle and the 1/f noise = Le principe d'incertitude et le bruit en 1/fKISS, L. B; TÖRÖK, M. I; AMBRÓZY, A et al.Solid state communications. 1985, Vol 54, Num 3, pp 297-299, issn 0038-1098Article

On electrical transport in non-isothermal semi-conductorsDORKEL, J. M.Solid-state electronics. 1983, Vol 26, Num 8, pp 819-821, issn 0038-1101Article

IMPURITY SCATTERING OF ELECTRONS IN NON-DEGENERATE SEMICONDUCTORSEL GHANEM HMA; RIDLEY BK.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 10; PP. 2041-2054; BIBL. 28 REF.Article

NIVEAUX ELECTRONIQUES-NUCLEAIRES DES IONS LANTHANIDES DANS LES SEMICONDUCTEURS NON DEGENERESKOSOV AA; TSAREVSKIJ SL.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 7; PP. 1921-1926; BIBL. 11 REF.Article

EFFECT OF NONPARABOLIC BAND STRUCTURE OF SEMICONDUCTORS ON ACOUSTOELECTRIC INSTABILITYGUHA S; APTE N.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 1; PP. K47-K50; BIBL. 12 REF.Article

CONDUCTION ELECTRONS IN FERROMAGNETIC SEMICONDUCTORS NEAR THE CURIE POINT.NAGAEY EL.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 2; PP. 109-111; ABS. RUSSE; BIBL. 10 REF.Article

EVALUATION DU TAUX DE COMPENSATION ET DES FLUCTUATIONS D'IMPURETES DANS LES COMPOSES III-V NON DEGENERES, A PARTIR DE MESURES ELECTRIQUES EN LIMITE ULTRA QUANTIQUE.RAYMOND A; AULOMBARD RL; BOUSQUET C et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 119-123; ABS. ANGL.; BIBL. 7 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

THE GENERAL TRANSMISSION LINE EQUIVALENT CIRCUIT MODEL FOR DEGENERATE AND NON-DEGENERATE CARRIER CONCENTRATIONS IN SEMICONDUCTORS.GREEN MA; SHEWCHUN J.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 717-723; BIBL. 18 REF.Article

Equivalent noise source for Boltzmann transport equation with relaxation-time approximation in nondegenerate semiconductorsMOH, K. G; MIN, H. S; PARK, Y. J et al.Journal of applied physics. 1993, Vol 74, Num 10, pp 6217-6221, issn 0021-8979Article

POUVOIR THERMOELECTRIQUE LONGITUDINAL DANS UN CHAMP MAGNETIQUE QUANTIFIANTPINCHUK II; KOROLYUK SL.1977; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1977; VOL. 22; NO 1; PP. 35-38; ABS. ANGL.; BIBL. 11 REF.Article

DIFFUSION OF AN IONIZED IMPURITY IN A SEMI-INFINITE SEMICONDUCTORMALKOVICH RS; POKOEVA VA.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 1; PP. 241-248; ABS. GER; BIBL. 8 REF.Article

RESONANCE CYCLOTRON CLASSIQUE DANS LES SEMICONDUCTEURS LORS DE LA DIFFUSION DES ELECTRONS PAR LES PHONONS OPTIQUESSHMELEV GM; TSURKAN GI.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 1; PP. 63-65; BIBL. 14 REF.Article

MAGNON DRAG THERMOELECTRIC POWER IN FERROMAGNETIC SEMICONDUCTORSPATIL CG; PATIL CG et al.KRISHNA MURTHY BS; PATIL CG; PATIL CG et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 88; NO 2; PP. K117-K122; BIBL. 6 REF.Article

PROPRIETES ELECTRONIQUES DES SEMICONDUCTEURS NON DEGENERES FORTEMENT DOPES ET COMPENSESGULYAEV YU V; PLESSKIJ VP.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 71; NO 4; PP. 1475-1480; ABS. ANGL.; BIBL. 11 REF.Article

Harmonic generation by nondegenerate p-n junction varactor diodesMUHAMMAD TAHER ABUELMA'ATTI.Active and passive electronic components. 1997, Vol 19, Num 4, pp 205-215, issn 0882-7516Article

A generalized formula for the a.c. admittances of nondegenerate semiconductor devices with one-dimensional geometry near equilibriumMIN, H. S.Solid-state electronics. 1989, Vol 32, Num 4, pp 295-298, issn 0038-1101Article

Generalization of Nyquist-Einstein relationship to conditions far from equilibrium on nondegenerate semiconductorsREGGIANI, L; LUGLI, P; MITIN, V et al.Physical review letters. 1988, Vol 60, Num 8, pp 736-739, issn 0031-9007Article

A unified theory of noise in nondegenerate semiconductorsMIN, H. S.Journal of applied physics. 1987, Vol 61, Num 9, pp 4549-4565, issn 0021-8979Article

Enhanced shot-noise in mesoscopic non-degenerate diffusive semiconductorsGOMILA, G; GONZALEZ, T; REGGIANI, L et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 189-192, issn 0921-4526Conference Paper

A generalized expression for diffusion noise and hot electron noise at arbitrary drift velocitiesVAN DER ZIEL, A.Solid-state electronics. 1986, Vol 29, Num 4, pp 465-466, issn 0038-1101Article

Nonlinear current density in weak magnetic fields in semiconductorsSTRAMSKA, H.Acta physica Polonica. A. 1983, Vol 64, Num 4, pp 369-375, issn 0587-4246Article

Hot electron magnetophonon resonances in conduction and noise for a nondegenerate semiconductorCUI, H. L; LEI, X. L; HORING, N. J. M et al.Physica status solidi. B. Basic research. 1988, Vol 146, Num 1, pp 189-197, issn 0370-1972Article