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kw.\*:("Semiconductor no degenerado")

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The transport of excess current carriers in an inhomogeneous semiconductor with position-dependent band gapSIKORSKI, S.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 18-26, issn 0268-1242Article

Equivalent noise source for Boltzmann transport equation with relaxation-time approximation in nondegenerate semiconductorsMOH, K. G; MIN, H. S; PARK, Y. J et al.Journal of applied physics. 1993, Vol 74, Num 10, pp 6217-6221, issn 0021-8979Article

Enhanced shot-noise in mesoscopic non-degenerate diffusive semiconductorsGOMILA, G; GONZALEZ, T; REGGIANI, L et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 189-192, issn 0921-4526Conference Paper

A generalized expression for diffusion noise and hot electron noise at arbitrary drift velocitiesVAN DER ZIEL, A.Solid-state electronics. 1986, Vol 29, Num 4, pp 465-466, issn 0038-1101Article

Harmonic generation by nondegenerate p-n junction varactor diodesMUHAMMAD TAHER ABUELMA'ATTI.Active and passive electronic components. 1997, Vol 19, Num 4, pp 205-215, issn 0882-7516Article

Hot electron magnetophonon resonances in conduction and noise for a nondegenerate semiconductorCUI, H. L; LEI, X. L; HORING, N. J. M et al.Physica status solidi. B. Basic research. 1988, Vol 146, Num 1, pp 189-197, issn 0370-1972Article

A generalized formula for the a.c. admittances of nondegenerate semiconductor devices with one-dimensional geometry near equilibriumMIN, H. S.Solid-state electronics. 1989, Vol 32, Num 4, pp 295-298, issn 0038-1101Article

Generalization of Nyquist-Einstein relationship to conditions far from equilibrium on nondegenerate semiconductorsREGGIANI, L; LUGLI, P; MITIN, V et al.Physical review letters. 1988, Vol 60, Num 8, pp 736-739, issn 0031-9007Article

A unified theory of noise in nondegenerate semiconductorsMIN, H. S.Journal of applied physics. 1987, Vol 61, Num 9, pp 4549-4565, issn 0021-8979Article

Hall effect of nonparabolicity in a nondegenerate indium antimonideCHHI-CHONG WU; JENSAN TSAI; CHAU-JY LIN et al.Journal of applied physics. 1987, Vol 62, Num 6, pp 2364-2369, issn 0021-8979Article

LO-phonon instability in semiconductors in the simultaneous presence of laser and dc electric fieldsTRONCONI, A. L; NUNES, O. A. C.Physics letters. A. 1986, Vol 114, Num 7, pp 389-391, issn 0375-9601Article

The effect of the temperature shift of the energy bands on the thermopower of quasi-free electrons in semiconductorsALDEA, A.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1989, Vol 60, Num 3, pp 391-398, issn 0141-8637Article

Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor opticsMEIER, T; SIEH, C; FINGER, E et al.Physica status solidi. B. Basic research. 2003, Vol 238, Num 3, pp 537-540, issn 0370-1972, 4 p.Conference Paper

Airy-coordinate technique for nonequilibrium Green's-function approach to high-field quantum transportBERTONCINI, R; KRIMAN, A. M; FERRY, D. K et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 3, pp 1390-1400, issn 0163-1829Article

On the photostimulated amplification of magnons in magnetic semiconductorsTRONCONI, A. L; NUNES, O. A. C.Solid state communications. 1987, Vol 63, Num 6, pp 561-564, issn 0038-1098Article

Relation entre propriétés électriques et défauts de réseau dans ZnSiAs2. I: Analyse de l'énergie d'ionisation = Relation between electrical properties and lattice defects in ZnSiAs2. I. Analysis of the ionisation energyCHIPPAUX, D; MERCEY, B; DESCHANVRES, A et al.The Journal of physics and chemistry of solids. 1987, Vol 48, Num 5, pp 447-457, issn 0022-3697Article

Quantum 1/f noise associated with ionized impurity scattering and electron-phonon scattering in condensed matterKOUSIK, G. S; VAN VLIET, C. M; BOSMAN, G et al.Advances in Physics. 1985, Vol 34, Num 6, pp 663-702, issn 0001-8732Article

Quantum 1/f noise associated with intervalley scattering in nondegenerate semiconductors. I: Analytical calculationsKOUSIK, G. S; VAN VLIET, C. M; BOSMAN, G et al.Physica status solidi. B. Basic research. 1989, Vol 154, Num 2, pp 713-726, issn 0370-1972Article

Gauge-invariant formulation of the intracollisional field effect including collisional broadeningBERTONCINI, R; JAUHO, A. P.Physical review. B, Condensed matter. 1991, Vol 44, Num 8, pp 3655-3664, issn 0163-1829Article

Auger recombination in Cd0.2Hg0.8Te and the effect of background radiation on its measurementBEATTIE, A. R.Semiconductor science and technology. 1987, Vol 2, Num 5, pp 281-287, issn 0268-1242Article

Nonlinear response of electron-phonon interaction in n-type nondegenerate piezoelectric semiconductorsCHHI-CHONG WU; JENSAN TSAI.Journal of low temperature physics. 1987, Vol 68, Num 5-6, pp 353-370, issn 0022-2291Article

Relation entre propriétés électriques et défauts de réseau dans ZnSiAs2. II: Analyse de la mobilité = Relation between electrical properties and lattice defects in ZnSiAs2. II. Analysis of the mobilityCHIPPAUX, D; MERCEY, B; DESCHANVRES, A et al.The Journal of physics and chemistry of solids. 1987, Vol 48, Num 5, pp 459-467, issn 0022-3697Article

Electron-electron scattering in nondegenerate semiconductors: driving the anisotropic distribution toward a displaced maxwellianWINGREEN, N. S; STANTON, C. J; WILKINS, J. W et al.Physical review letters. 1986, Vol 57, Num 8, pp 1084-1087, issn 0031-9007Article

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