kw.\*:("Semiisolant")
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WHISPERING GALLERY LASERS ON SEMI-INSULATING GAAS SUBSTRATESURY I; MARGALIT S; BAR CHAIM N et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 629-631; BIBL. 13 REF.Article
Infrared and photoelectron spectroscopy of semi-insulating silicon layersTRCHOVA, M; ZEMEK, J; JUREK, K et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 911-915, issn 0022-3093, bConference Paper
Photoluminescence of semi-insulating InP wafers prepared by two-step wafer annealingUCHIDA, M; ODA, O; WARASHINA, M et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 3, pp 1048-1051, issn 0013-4651Article
PROPERTIES OF INTERCONNECTION ON SILICON, SAPPHIRE, AND SEMI-INSULATING GALLIUM ARSENIDE SUBSTRATESYUAN HT; LIN YT; CHIANG SY et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 269-274; BIBL. 11 REF.Article
Above band-gap excitation process of the 0.6 eV luminescence band in GaAsTAJIMA, M; IINO, T; ISHIDA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 6, pp L1060-L1063, issn 0021-4922, 2Article
Low frequency dielectric characterization of semi-insulating iron-doped InPGREEN, P. W.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 116-123, issn 0268-1242Article
FABRICATION OF SI MOSFET'S USING NEUTRON-IRRADIATED SILICON AS SEMI-INSULATING SUBSTRATEVU QUOC HO; SUGANO T.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 487-491; BIBL. 10 REF.Article
Influence of non-stoichiometry on the recombination activity of dislocations in undoped semi-insulating GaAs crystalsGLINCHUK, K. D; PROKHOROVICH, A. V.Crystal research and technology (1979). 1995, Vol 30, Num 2, pp 201-204, issn 0232-1300Article
Temperature dependence of the control of a transistor y a semiinsulating substrate in intregrated in integrated gallium arsenide circuitsGERGEL', V. A; LUK'YANCHENKO, A. I; SOLYAKOV, A. N et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 9, pp 1007-1009, issn 0038-5700Article
Inhomogeneity of the deep center EL2 in GaAs observed by direct infra-red imagingSKOLNICK, M. S; BROZEL, M. R; REED, L. J et al.Journal of electronic materials. 1984, Vol 13, Num 1, pp 107-125, issn 0361-5235Article
Phase distinction in semi-insulating polycrystalline silicon by pattern recognition of X-ray photoelectron spectroscopy/X-ray-induced Auger electron spectroscopy dataLESIAK, B; ZEMEK, J; JOZWIK, A et al.Applied surface science. 1998, Vol 135, Num 1-4, pp 318-330, issn 0169-4332Article
11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperatureLAU, K. Y; BAR-CHAIM, N; URY, I et al.Applied physics letters. 1984, Vol 45, Num 4, pp 316-318, issn 0003-6951Article
Investigations of the electrical and structural characteristics of so MeV 7Li implanted SI-InPDHARMARASU, N; ARULKUMARAN, S; SUMATHI, R. R et al.Physica status solidi. A. Applied research. 1998, Vol 167, Num 1, pp 157-163, issn 0031-8965Article
Integratable, high speed buried ridge DFB lasers fabricated on semi-insulating substratesCHARLES, P. M; JONES, G. G; WILLIAMS, P. J et al.Electronics Letters. 1991, Vol 27, Num 9, pp 700-702, issn 0013-5194Article
Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substratesSHEN, H; POLLAK, F. H; WOODALL, J. M et al.Journal of electronic materials. 1990, Vol 19, Num 3, pp 283-286, issn 0361-5235Article
Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuitsISHII, M; KAMON, K; SHIMAZU, M et al.Electronics Letters. 1987, Vol 23, Num 5, pp 179-181, issn 0013-5194Article
Physical model of control of a field-effect transistor via a semiinsulating substrateGERGEL', V. A; II'ICHEV, E. A; LUK'YANCHENKO, A. I et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 12, pp 1310-1313, issn 0038-5700Article
Analysis of ellipsometric and thermoreflectance spectra for P-based III-V compounds GaP and InPYOSHIKAWA, H; ADACHI, S.Japanese journal of applied physics. 1996, Vol 35, Num 12A, pp 5946-5954, issn 0021-4922, 1Article
Evidence of normal EL2 state changes in the temperature range 120 to 150 K in semi-insulating GaAsKAZUKAUSKAS, V; KILIULIS, R.Physica status solidi. B. Basic research. 1993, Vol 179, Num 1, pp K21-K25, issn 0370-1972Article
Franz-Keldysh oscillations of δ-doped GaAsHSU, T. M; TIEN, Y. C; LU, N. H et al.Journal of applied physics. 1992, Vol 72, Num 3, pp 1065-1069, issn 0021-8979Article
OH bonds in gallium arsenide grown by the liquid-encapsulated Czocharalski crystal-growth methodPAJOT, B; SONG, C.-Y.Physical review. B, Condensed matter. 1992, Vol 45, Num 12, pp 6484-6491, issn 0163-1829Article
Low-frequency transport in semi-insulating GaAsSHULMAN, D. D.Journal of applied physics. 1992, Vol 72, Num 6, pp 2288-2293, issn 0021-8979Article
Modified exponential fit of optically induced transient currents in semi-insulating semiconductorsBACKHOUSE, C; HUI, D; YOUNG, L et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 8, pp L32-L34, issn 0013-4651Article
Photoluminescence of indium-alloyed semi-insulating GaAs subjected to bulk heat treatmentsYU, P. W; KUWAMOTO, H.Journal of applied physics. 1991, Vol 70, Num 2, pp 954-959, issn 0021-8979Article
The analysis of low-temperature photoconductivity evolution in semi-insulating GaAsDESNICA, U. V; DESNICA, D. I; SANTIC, B et al.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 31, pp 5817-5824, issn 0953-8984Article