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Decompression sickness bubbles: Are gas micronuclei formed on a flat hydrophobic surface?ARIELI, R; MARMUR, A.Respiratory physiology & neurobiology. 2011, Vol 177, Num 1, pp 19-23, issn 1569-9048, 5 p.Article

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Nanoscale friction and wear properties of silicon wafer under different lubrication conditionsXIAOCHUN CHEN; YONGWU ZHAO; YONGGUANG WANG et al.Applied surface science. 2013, Vol 282, pp 25-31, issn 0169-4332, 7 p.Article

Near infra-red Mueller matrix imaging system and application to retardance imaging of strainSANDVIK AAS, Lars Martin; GUNNAR ELLINGSEN, Pal; KILDEMO, Morten et al.Thin solid films. 2011, Vol 519, Num 9, pp 2737-2741, issn 0040-6090, 5 p.Conference Paper

Formation of dicarboxylic acid-terminated monolayers on silicon wafer surfaceDEMIRCI, Serkan; CAYKARA, Tuncer.Surface science. 2010, Vol 604, Num 7-8, pp 649-653, issn 0039-6028, 5 p.Article

Dependence of crystal nature on the gettering efficiency of iron and nickel in a Czochralski silicon waferPARK, Jea-Gun; KURITA, Kazunari; LEE, Gon-Sub et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 247-257, issn 0167-9317, 11 p.Conference Paper

The peculiarities of mechanical bending of silicon wafers after diverse manufacturing operationsBIDADI, H; SOBHANIAN, S; MAZIDI, M et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 515-519, issn 0959-8324, 5 p.Conference Paper

Modification of (111) and (100) silicon in atmospheric pressure plasmaSKACELOVA, Dana; STUPAVSKA, Monika; ST'AHEL, Pavel et al.Applied surface science. 2014, Vol 312, pp 203-207, issn 0169-4332, 5 p.Article

Metal-assisted homogeneous etching of single crystal silicon: A novel approach to obtain an ultra-thin silicon waferFAN BAI; MEICHENG LI; DANDAN SONG et al.Applied surface science. 2013, Vol 273, pp 107-110, issn 0169-4332, 4 p.Article

Abrasive properties of nano silica particles prepared by a sol-gel method for polishing silicon wafersYOSHIDA, Kazuaki.Journal of sol-gel science and technology. 2007, Vol 43, Num 1, pp 9-13, issn 0928-0707, 5 p.Article

Growth of carbon nanotubes on Si/SiO₂ wafer etched by hydrofluoric acid under different etching durationsTAN, Lling-Lling; CHAI, Siang-Piao; RAHMAN MOHAMED, Abdul et al.Applied surface science. 2012, Vol 258, Num 15, pp 5774-5777, issn 0169-4332, 4 p.Article

Plasma cleaning and activation of silicon surface in Dielectric Coplanar Surface Barrier DischargePAMREDDY, Annapurna; SKACELOVA, Dana; HANICINEC, Martin et al.Surface & coatings technology. 2013, Vol 236, pp 326-331, issn 0257-8972, 6 p.Article

Micro-machining of silicon wafer in air and under waterWEE, L. M; NG, E. Y. K; PRATHAMA, A. H et al.Optics and laser technology. 2011, Vol 43, Num 1, pp 62-71, issn 0030-3992, 10 p.Article

Atmospheric-pressure plasma pretreatment for direct bonding of silicon wafers at low temperaturesEICHLER, M; MICHEL, B; THOMAS, M et al.Surface & coatings technology. 2008, Vol 203, Num 5-7, pp 826-829, issn 0257-8972, 4 p.Conference Paper

A grinding-based manufacturing method for silicon wafers : an experimental investigationPEI, Z. J; FISHER, Graham R; BHAGAVAT, Milind et al.International journal of machine tools & manufacture. 2005, Vol 45, Num 10, pp 1140-1151, issn 0890-6955, 12 p.Article

Immobilized enzyme studies in a microscale bioreactorJONES, Francis; FORREST, Scott; PALMER, Jim et al.Applied biochemistry and biotechnology. 2004, Vol 113-16, pp 261-272, issn 0273-2289, 12 p.Conference Paper

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Accurate calibration of TXRF using microdroplet samplesFABRY, L; PAHLKE, S; KOTZ, L et al.Fresenius' journal of analytical chemistry. 1996, Vol 354, Num 3, pp 266-270, issn 0937-0633Article

A grinding-based manufacturing method for silicon wafers : Generation mechanisms of central bumps on ground wafersWANGPING SUN; PEI, Z. J; FISHER, Graham R et al.Machining science and technology. 2006, Vol 10, Num 2, pp 219-233, issn 1091-0344, 15 p.Article

ZoneBOND Thin Wafer Support Process for Wafer Bonding ApplicationsMCCUTCHEON, Jeremy; BROWN, Robert; DACHSTEINER, Joelle et al.Journal of microelectronics and electronic packaging. 2010, Vol 7, Num 3, pp 138-142, issn 1551-4897, 5 p.Article

Grinding of silicon wafers : A review from historical perspectivesPEI, Z. J; FISHER, Graham R; LIU, J et al.International journal of machine tools & manufacture. 2008, Vol 48, Num 12-13, pp 1297-1307, issn 0890-6955, 11 p.Article

A study on the fabrication of polycrystalline Si wafer by direct casting for solar cell substrateGEUN HEE LEE; CHANG KYU RHEE; KOENG SU LIM et al.Solar energy. 2006, Vol 80, Num 2, pp 220-225, issn 0038-092X, 6 p.Article

Audible vibration diagnostics of thermo-elastic residual stress in multi-crystalline silicon wafersBEST, S. R; HESS, D. P; BELYAEV, A et al.Applied Acoustics. 2006, Vol 67, Num 6, pp 541-549, issn 0003-682X, 9 p.Article