High Fe^2+/3+ trap concentration in heavily compensated implanted InPFRABONI, B; GASPAROTTO, A; PRIOLO, F et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 1, pp 35-38, issn 0947-8396Article

Characterization of Ti and V doped CdTe by time dependent charge measurement (TDCM) and photoinduced current transient spectroscopy (PICTS)EICHE, C; JOERGER, W; FIEDERLE, M et al.Optical materials (Amsterdam). 1995, Vol 4, Num 2-3, pp 214-218, issn 0925-3467Conference Paper

Detection of EL2 in undoped LEC GaAs by a novel variation of photo-induced transient spectroscopyBLIGHT, S. R; PAGE, A. D; LADBROOKE, P. H et al.Japanese journal of applied physics. 1987, Vol 26, Num 8, pp 1388-1389, issn 0021-4922, 1Article

Photoinduced current transient spectroscopy in InSe single crystalsMICOCCI, G; SICILIANO, P; TEPORE, A et al.Solar energy materials. 1990, Vol 20, Num 3, pp 181-187, issn 0165-1633, 7 p.Article

Photo-induced current transient spectroscopy in high-resistivity bulk material. III: Scanning-PICTS system for imaging spatial distributions of deep-traps in semi-insulating GaAs waferYOSHIE, O; KAMIHARA, M.Japanese journal of applied physics. 1985, Vol 24, Num 4, pp 431-440, issn 0021-4922Article

Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium tellurideLAUNAY, J. C; MAZOYER, V; TAPIERO, M et al.Applied physics. A, Solids and surfaces. 1992, Vol 55, Num 1, pp 33-40, issn 0721-7250Article

Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped siliconTOKUDA, Y; USAMI, A; INOUE, Y et al.Semiconductor science and technology. 1987, Vol 2, Num 5, pp 251-254, issn 0268-1242Article

Influence of arsenic vapor pressure during copper diffusion in deep level formation in silicon-doped gallium arsenideTHOMAS, L. M; LAKDAWALA, V. K.Journal of electronic materials. 1993, Vol 22, Num 4, pp 341-346, issn 0361-5235Article

Characterization of deep levels in Bi₁₂GeO₂₀ by photoinduced current transient spectroscopyBENJELLOUN, N; TAPIERO, M; ZIELINGER, J. P et al.Journal of applied physics. 1988, Vol 64, Num 8, pp 4013-4023, issn 0021-8979Article

CARACTERISATION DE MATERIAUX SEMI-ISOLANTS PAR SPECTROSCOPIE DE TRANSITOIRE DE COURANT PHOTOINDUIT : MATERIAUX InP DOPES Fe POUR LA MICRO-OPTOELECTRONIQUE ET CdZnTe POUR LA DETECTION NUCLEAIRE = CHARACTERIZATION OF SEMI-INSULATING MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY : Fe DOPED InP FOR MICRO-OPTOELECTRONICS AND CdZnTe FOR NUCLEAR DETECTIONCherkaoui, Karim; Marrakchi, Ghanem.1998, 149 p.Thesis

Additive double gate analysis in photoinduced current transient spectroscopy : Application to cuprous oxideRAKHSHANI, A. E; KHAN, W. I; MATHEW, X et al.Physica status solidi. B. Basic research. 1996, Vol 196, Num 1, pp 163-173, issn 0370-1972Article

Investigation of compensation defects of CdTe:Cl samples grown by different techniquesEICHE, C; MAIER, D; SINERIUS, D et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 6667-6670, issn 0021-8979Article

Deep level spectroscopy in p-GaSe single crystalsMICOCCI, G; SICILIANO, P; TEPORE, A et al.Journal of applied physics. 1990, Vol 67, Num 10, pp 6581-6582, issn 0021-8979Article

On the photoconductivity relaxation in ZnIn₂S₄SERPI, A; ZIELINGER, J. P.Physica status solidi. A. Applied research. 1988, Vol 108, Num 1, pp 351-362, issn 0031-8965Article

Photo-induced Current Transient Spectroscopy of deep levels in ZnTe and Mg_0.21Zn_0.79Te crystalsEL AKKAD, F.Physica status solidi. B. Basic research. 1997, Vol 201, Num 1, pp 135-141, issn 0370-1972Article

Photocurrent transients in presence of a double impurity in semi-insulating semiconductorsASHOUR, H; THOMAS, M; FARHAN, A et al.Physica status solidi. A. Applied research. 2000, Vol 178, Num 2, pp 755-763, issn 0031-8965Article

Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularization methodEICHE, C; MAIER, D; SCHNEIDER, M et al.Journal of physics. Condensed matter (Print). 1992, Vol 4, Num 28, pp 6131-6140, issn 0953-8984Article

Etude du rôle des centres profonds dans le matériau photoréfractif CdTe : V ainsi que dans le ternaire CdIn₂Te₄. Caractérisation par spectroscopies thermique et optique = Deep levels study in the photorefractive materials CdTe : V and ternary CdIn₂Te₄. Caracterization by optical and thermal spectroscopyGuellil, Zakaria; Tapiero, Mayer.1999, 275 p.Thesis

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II: Evaluation of various signal processing methodsBALLAND, J. C; ZIELINGER, J. P; TAPIERO, M et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 1, pp 71-87, issn 0022-3727Article

About the origin of the 0.15 to 0.20 eV defect level in cadmium tellurideSAMIMI, M; BIGLARI, B; HAGE-ALI, M et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp 251-258, issn 0031-8965Article

Scanning-DLTS investigations on semi-insulating GaAs:Cr,In containing ¨streamersBREITENSTEIN, O; GILING, L. J.Physica status solidi. A. Applied research. 1987, Vol 99, Num 1, pp 215-223, issn 0031-8965Article

Comparison of deep centers in semi-insulating liquid-encapsulated Czochralski and vertical-gradient freeze GaAsFANG, Z.-Q; LOOK, D. C.Journal of applied physics. 1991, Vol 69, Num 12, pp 8177-8182, issn 0021-8979, 6 p.Article

Photo-induced transient spectroscopy pits study on undoped LEC grown semi-insulating GaAsZHAOQIANG FANG; LEI SHAN; SCHLESINGER, T. E et al.Solid-state electronics. 1989, Vol 32, Num 5, pp 405-410, issn 0038-1101Article

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. I: Review and analysis of some basic problemsBALLAND, J. C; ZIELINGER, J. P; NOGUET, C et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 1, pp 57-70, issn 0022-3727Article

Caractérisation des niveaux profonds dans le matériau photoréfractif Bi₁₂ GeO₂₀ par analyse de transitoires de courant photo-induitBenjelloun, Nadia; Zielinger, Jean-Paul.1988, 283 p.Thesis