Effects of O₂ annealing after etching SrBi₂Ta₂O₉ thin film in Cl₂/CF₄/Ar plasmaKIM, Dong-Pyo; KIM, Chang-Il; YU, Byoung-Gon et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 904-911, issn 0167-9317, 8 p.Conference Paper

Influence of low frequency dielectric dispersion on the phase transition for the pulsed laser-deposited SrBi₂Ta₂O₉ thin filmPARK, Jong-Ho; BAE, Jong-Seong; CHOI, Byung-Chun et al.Journal of the Physical Society of Japan. 2004, Vol 73, Num 6, pp 1607-1608, issn 0031-9015, 2 p.Article

Ferroelectric SrBi2Ta2O9 Thin Film Studied by Micro-Raman Scattering and Atomic Force MicroscopySAKAI, Akira; YOSHIE, Toshiharu.Ferroelectrics (Print). 2011, Vol 416, pp 53-57, issn 0015-0193, 5 p.Conference Paper

The sintering behavior of SrBi₂Ta₂O₉ associated with synthesis temperature of its powder in solid-state reactionBAORANG LI; XIAOHUI WANG; LONGTU LI et al.Materials letters (General ed.). 2003, Vol 57, Num 13-14, pp 1987-1991, issn 0167-577X, 5 p.Article

Synthesis and characterization of SrBi₂Ta₂O₉ powders for ferroelectric applicationsGONZALEZ AGUILAR, G; COSTA, M. E. V.Ferroelectrics (Print). 2003, Vol 294, pp 211-220, issn 0015-0193, 10 p.Conference Paper

Light scattering study of bismuth layered ferroelectric SrBi₂Ta₂O₉TAKESADA, M; SUTOH, K; FUKUNAGA, M et al.Ferroelectrics (Print). 2007, Vol 355, pp 149-153, issn 0015-0193, 5 p.Conference Paper

First-principles study of spontaneous polarization in SrBi₂Ta₂O₉HUA KE; WEN WANG; ZHENXING ZHENG et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 1, issn 0953-8984, 015901.1-015901.5Article

Electronic structure difference of stoichiometric and off-stoichiometric SBTOZKENDIR, O. M; BOZGEYIK, M. S.The European physical journal. B, Condensed matter physics (Print). 2010, Vol 76, Num 2, pp 203-208, issn 1434-6028, 6 p.Article

Fatigue study of SrBi₂Ta₂O₉ thin films processed in forming gasTAO YU; WANG, Dong-Sheng; DI WU et al.Sensors and actuators. A, Physical. 2002, Vol 99, Num 1-2, pp 213-215, issn 0924-4247, 3 p.Conference Paper

Memory window widening of Pt/SrBi₂Ta₂O₉/HfO₂/Si ferroelectric-gate field-effect transistors by nitriding SiHORIUCHI, Takeshi; TAKAHASHI, Mitsue; OHHASHI, Kentaro et al.Semiconductor science and technology. 2009, Vol 24, Num 10, issn 0268-1242, 105026.1-105026.5Article

Lone pairs in insulating pyrochlores : Ice rules and high-k behaviorSESHADRI, Ram.Solid state sciences. 2006, Vol 8, Num 3-4, pp 259-266, issn 1293-2558, 8 p.Article

Phase transition and electrical studies of wolframium doped SrBi₂Ta₂O₉ ferroelectric ceramicsCOONDOO, Indrani; JHA, A. K; AGARWAL, S. K et al.Journal of electroceramics. 2006, Vol 16, Num 4, pp 393-398, issn 1385-3449, 6 p.Conference Paper

Dielectric properties of SrBi₂Ta₂O₉ films in the low-temperature rangePINGXIONG YANG; MING GUO; MEIRONG SHI et al.Journal of materials science. 2005, Vol 40, Num 23, pp 6329-6331, issn 0022-2461, 3 p.Article

Spark-plasma-sintering of bulk SrBi₂Ta₂O₉ materialsBAORANG LI; XIAOHUI WANG; XIUQUAN HAN et al.Journal of materials science. 2004, Vol 39, Num 7, pp 2621-2623, issn 0022-2461, 3 p.Article

High-temperature phase transitions in SrBi₂Ta₂O₉ film: a study by THz spectroscopyKADLEC, F; KAMBA, S; KUZEL, P et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 37, pp 6763-6769, issn 0953-8984, 7 p.Article

Preparation of nanocrystalline SrBi₂Ta₂O₉ powders using sucrose-PVA as the polymeric matrixPANDA, A. B; TARAFDAR, A; SEN, S et al.Journal of materials science. 2004, Vol 39, Num 11, pp 3739-3744, issn 0022-2461, 6 p.Article

Characterisation of thin films of the ferroelectric material SrBi₂Ta₂O₉ obtained by sol-gel methods on Sr₂RuO₄(001) single crystal substrateLEONARD, S; MADIGOU, V; VILLAIN, S et al.Ferroelectrics (Print). 2003, Vol 288, pp 1-9, issn 0015-0193, 9 p.Conference Paper

Different growth behavior of SrBi₂Ta₂O₉ferroelectric films under conventional and rapid annealing processing by metalorganic decompositionLI, Ai-Dong; DI WU; LING, Hui-Qin et al.Journal of crystal growth. 2002, Vol 235, Num 1-4, pp 394-400, issn 0022-0248Article

Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi₂Ta₂O₉ film and ultra-thin Si₃N₄ buffer layerHUANG, Chia-Hsing; TSENG, Tseung-Yuen; CHIEN, Chao-Hsin et al.Thin solid films. 2002, Vol 420-21, pp 377-381, issn 0040-6090, 5 p.Conference Paper

Pulsed laser deposition of epitaxial SrBi₂Ta₂O₉ films with controlled orientationGARG, Ashish; BARBER, Zoe H.Ferroelectrics (Print). 2002, Vol 268, pp 89-94, issn 0015-0193Conference Paper

No volatilidad en láminas ferroeléctricas de SBT a 75°C = Non-volatility of ferroelectric SBT thin fims, at 75°CJIMENEZ, R; GONZALEZ, A; ALEMANY, C et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2002, Vol 41, Num 1, pp 22-26, issn 0366-3175Conference Paper

Epitaxial growth of SrBi₂Ta₂O₉ on siliconSCHUMACHER, J; MARTINEZ, J. C; MARTIN, F et al.Ferroelectrics (Print). 2001, Vol 255, pp 111-122, issn 0015-0193Article

SrBi₂Ta₂O₉ has only two polar axes - a problem for high density ferroelectric memory devicesFRANKE, K; MARTIN, G; WEIHNACHT, M et al.Solid state communications. 2001, Vol 119, Num 3, pp 117-119, issn 0038-1098Article

The etching characteristics of SrBi₂Ta₂O₉ thin film in CF₄/Ar plasma using magnetically enhanced inductively coupled plasmaKIM, Dong-Pyo; KIM, Chang-Il.Thin solid films. 2001, Vol 385, Num 1-2, pp 162-166, issn 0040-6090Article

Preparation and characterization of metalorganic decomposition-derived SrBi₂Ta₂O₉ thin filmsDI WU; AIDONG LI; HUIQIN LING et al.Materials letters (General ed.). 2000, Vol 44, Num 3-4, pp 158-163, issn 0167-577XArticle