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Results 1 to 25 of 87

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DETERMINATION DES PARAMETRES ELECTRO-PHYSIQUES DE LA REGION FORTEMENT DOPEE D'UNE DIODE D'APRES LA DUREE DE LA PHASE DE FORTE CONDUCTANCE INVERSEGREKHOV IV; OTBLESK AE.1974; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 19; NO 9; PP. 1910-1916; BIBL. 11 REF.Article

ELECTROLUMINESCENCE IN FORWARD-BIASED ZNSE DIODES.WATANABE H; CHIKAMURA T; WADA M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 2; PP. 357-358; BIBL. 8 REF.Article

MESURE DE LA DUREE D'ACTION DE LA TENSION INVERSE SUR DES THYRISTORS A BLOQUAGEPISKAREV AN; SINITSYN VA.1976; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1976; VOL. 19; NO 6; PP. 100-102; BIBL. 1 REF.Article

FREQUENCY RESPONSE OF ALLOY JUNCTION TRANSISTOR IN THE INVERSE MODE OF OPERATION.JAIN AK; SRIVASTAVA GP.1974; J. INSTITUT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 1-2; PP. 31-33; BIBL. 5 REF.Article

REVERSE BIAS LIGHT EMISSION FROM GAAS1-XPX DIODES. = EMISSION DE LUMIERE EN POLARISATION INVERSE A PARTIR DE DIODES GAAS1-XPXKONIDARIS S; FULOP W.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 863-868; BIBL. 17 REF.Article

ELECTROLUMINESCENCE IN REVERSE-BIASSED ZINC SELENIDE SCHOTTKY DIODESALLEN JW; LIVINGSTONE AW; TURVEY K et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1363-1369; ABS. FR.; BIBL. 12 REF.Serial Issue

NOISE STUDIES IN INTERNAL FIELD EMISSION DIODESLECOY G; ALABEDRA R; BARBAN B et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1273-1276; ABS. FR.; BIBL. 4 REF.Serial Issue

ELECTROLUMINESCENCE IN REVERSE-BIASED SCHOTTKY DIODESALLEN JW.1973; J. LUMINESC.; NETHERL.; DA. 1973; VOL. 7; PP. 228-240; BIBL. 12 REF.; (PHYS. TECHNOL. SEMICOND. LIGHT EMMITTERS DETECTORS. PROC. INT. SYMP.; PUGNACHIUSO, ITALY; 1972)Conference Paper

REVERSE CHARACTERISTICS OF AG-GAS SCHOTTKY BARRIERSVAN DEN DRIES JGAM; POST AG.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 7; PP. 709-711; ABS. ALLEM.; BIBL. 14 REF.Serial Issue

SHOT NOISE IN BACK BIASED P-N SILICON DIODES.VAN DER ZIEL A.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 969-970; BIBL. 3 REF.Article

THE SECOND BREAKDOWN IN REVERSE BIASED TRANSISTOR AS AN ELECTROTHERMAL SWITCHING.POPESCU C.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 428-436; BIBL. 17 REF.Article

REVERSE-BIASED P+-N--N+ JUNCTION AT EXTREME CURRENTS.NEUDECK GW.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 17; PP. 397-398; BIBL. 3 REF.Article

DISTRIBUTION SPATIALE DU RAYONNEMENT DE MESOPLASMA DANS UNE JONCTION PN POLARISEE EN INVERSE POUR UNE TENSION CONSTANTE OU IMPULSIONNELLEBALODIS YA K; PURITIS T YA.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 3; PP. 52-57; ABS. ANGL.; BIBL. 15 REF.Article

CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONSBOSSELAAR CA.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 648-651; BIBL. 14 REF.Serial Issue

THE PREDOMINANT ROLE OF THE SURFACE FILMS IN THE EMISSION OF ELECTRONS FROM REVERSE-BIASED P-N JUNCTIONS IN SILICON CARBIDEWIDDOWSON AE; ROSE FWG.1973; J. PHYS. C; G.B.; DA. 1973; VOL. 6; NO 3; PP. 437-449; BIBL. 25 REF.Serial Issue

PERFORMANCE OF INXGA1-XASYP1-Y PHOTODIODES WITH DARK CURRENT LIMITED BY DIFFUSION GENERATION RECOMBINATION, AND TUNNELINGFORREST SR.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 217-226; BIBL. 25 REF.Article

A REVERSE-BIAS SAFE OPERATING AREA TRANSISTOR TESTERBERNING DW.1979; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1979; NO 400-54; 37 P.; BIBL. 2 REF.Serial Issue

CURRENT AND VOLTAGE WAVEFORMS FOR REVERSE SWITCHING HIGH POWER P-I-N DIODES.GEORGOPOULOS CJ.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 286-295; BIBL. 20 REF.Article

A DESIGN TECHNIQUE FOR SPECIFIC REVERSE BIAS CHARACTERISTICS OF A P-I-N DIODE.RATNAKUMAR KN; KAKATI D.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 1; PP. K13-K16; BIBL. 4 REF.Article

ALLURE DE LA TENSION INVERSE AUX BORNES D'UN COMPOSANT SEMI-CONDUCTEUR AVEC PROTECTION RC PENDANT LE DECLENCHEMENT.DE BRUYNE P; LAWATSCH H.1975; REV. BROWN BOVERI; SUISSE; DA. 1975; VOL. 62; NO 5; PP. 220-224; BIBL. 4 REF.Article

A COMPENSATION LAW FOR REVERSE-BIASSED ZNSE SCHOTTKY DIODES.WILSON JIB; ALLEN JW.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 759-761; BIBL. 3 REF.Article

REVERSE-BIASED SILICON P-N JUNCTION CURRENT AT HIGH BIAS VOLTAGE.DELIOVA LA; GREKHOV IV; LEVINSTEIN ME et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. K21-K25; BIBL. 7 REF.Article

SECOND-BREAKDOWN PHENOMENA IN AVALANCHING SILICON-ON-SAPPHIRE DIODESSUNSHINE RA; LAMPERT MA.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 7; PP. 873-885; BIBL. 24 REF.Serial Issue

THYRISTORSCHUTZ MIT HALBLEITERN-WIRTSCHAFTLICH UND SICHER. = PROTECTION ECONOMIQUE ET SURE DE THYRISTORS PAR SEMI-CONDUCTEURSWETZEL P.1977; B.B.C. NACHR.; DTSCH.; DA. 1977; VOL. 59; NO 3-4; PP. 152-158; BIBL. 3 REF.Article

IMPROVED Y-BRIDGE FOR REVERSE-BIASED DIODE MEASUREMENTS.SYNEK S; VASINA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 232-238; ABS. RUSSE; BIBL. 4 REF.Article

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