UNTERSUCHUNG VON PN-UBERGAENGEN MIT UND OHNE OXIDSCHICHT MITTELS ELEKTRONENSPIEGELMIKROSKOPIE IN SCHATTENABBILDUNG = ETUDES DE JONCTIONS P-N AVEC ET SANS COUCHE D'OXYDE PAR MICROSCOPIE ELECTRONIQUE A MIROIR EN IMAGE D'OMBRESBECHERER G; GRADEWALD R; KUHLMANN F et al.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 287-298; ABS. ANGL.; BIBL. 25 REF.Serial Issue

EFFICACITE DE LA COMMANDE DU REGIME D'UN TRANSISTOR UHF A L'AIDE DE LA TENSION DE POLARISATIONKOMAROV VS; KOPTEV GI.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 127-129; BIBL. 1 REF.Article

PROBLEMES DE POLARISATION ET DE STABILISATION DU POINT DE FONCTIONNEMENT D'UN TRANSISTOR A EFFET DE CHAMPLESZCZYNSKI Z.1973; ARCH. ELEKTROTECH.; POLSKA; DA. 1973; VOL. 22; NO 84; PP. 507-515; ABS. RUSSE, ANGL.; BIBL. 6 REF.Serial Issue

COMPARATEUR AVEC CORRECTIONZHUKOV AV; MAKHOV VN.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 116-118; BIBL. 3 REF.Article

NEW QUARTZ MULTIVIBRATOR.DAMLJANOVIC DD.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 5; PP. 640-641; BIBL. 6 REF.Article

STABILITY OF HIGHLY DOPED NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DIODES.TORRENS AB.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 9; PP. 432-435; BIBL. 16 REF.Article

POLARIZED (LETTER *8*) MEMORY EFFECT IN SI SINGLE CRYSTAL POINT CONTACT DIODESMATSUDA A; OKUSHI H; SAITO M et al.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 1; PP. 227-231; ABS. RUSSE; BIBL. 5 REF.Serial Issue

HARMONIC EFFECTS ON THE BIAS-TUNING FEATURES OF WAVEGUIDE GUNN DIODE OSCILLATORS.BASTIDA EM.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 6; PP. 358-361; BIBL. 16 REF.Article

ZERO-BIAS SCHOTTKY DIODES AS MICROWAVE DETECTORS.SIEGAL B; PENDLETON E.1975; MICROWAVE J.; U.S.A.; DA. 1975; VOL. 18; NO 9; PP. 40-43; BIBL. 6 REF.Article

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INFLUENCE D'UNE TENSION EXTERIEURE SUR LES CARACTERISTIQUES DE POLARISATION DES JONCTIONS N-P DE CDSNP₂MEDVEDKIN GA; PODOL'SKIJ VV; RUD YU V et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2218-2222; BIBL. 6 REF.Article

BIAS INFLUENCE ON CORROSION OF PLASTIC ENCAPSULATED DEVICE METAL SYSTEMS.REICH B.1976; I.E.E.E. TRANS. RELIABIL.; U.S.A.; DA. 1976; VOL. R-25; NO 5; PP. 296-298; BIBL. 4 REF.Article

ETUDE DES CARACTERISTIQUES IMPULSIONNELLES C-V DES STRUCTURES MOS CORRESPONDANT AUX GRANDES VITESSES DE VARIATION DE LA TENSION DE POLARISATIONKAPLAN GD; KOLESHKO VM; NOGIN VM et al.1975; MIKROELEKTRONICA; S.S.S.R.; DA. 1975; VOL. 4; NO 4; PP. 306-310; BIBL. 4 REF.Article

FREQUENCY RESPONSE OF ALLOY JUNCTION TRANSISTOR IN THE INVERSE MODE OF OPERATION.JAIN AK; SRIVASTAVA GP.1974; J. INSTITUT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 1-2; PP. 31-33; BIBL. 5 REF.Article

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ELECTROLUMINESCENCE IN REVERSE-BIASSED ZINC SELENIDE SCHOTTKY DIODESALLEN JW; LIVINGSTONE AW; TURVEY K et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1363-1369; ABS. FR.; BIBL. 12 REF.Serial Issue

NOISE STUDIES IN INTERNAL FIELD EMISSION DIODESLECOY G; ALABEDRA R; BARBAN B et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1273-1276; ABS. FR.; BIBL. 4 REF.Serial Issue

POLARIZED MEMORY EFFECT IN SE THIN FILM DIODESMATSUSHITA T; YAMAGAMI T; YAMAMOTO K et al.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 10; PP. 1413-1415; ABS. RUSSE; BIBL. 5 REF.Serial Issue

MONTE CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES. = SIMULATION DE MONTE-CARLO DU TRANSPORT DE COURANT DANS LES DIODES A BARRIERE DE SCHOTTKY EN POLARISATION DIRECTEBACCARANI G; MAZZONE AM.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 2; PP. 59-60; BIBL. 4 REF.Article

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SUBSTRATE BIAS CHARACTERISTICS OF ³¹P⁺ IMPLANTED N-CHANNEL MOS FET.WADA K; NAKANO M.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1673-1674; BIBL. 3 REF.Article

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ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODESLIVINGSTONE AW; TURVEY K; ALLEN JW et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 351-356; ABS. FR.; BIBL. 10 REF.Serial Issue

ELECTROLUMINESCENCE IN REVERSE-BIASED SCHOTTKY DIODESALLEN JW.1973; J. LUMINESC.; NETHERL.; DA. 1973; VOL. 7; PP. 228-240; BIBL. 12 REF.; (PHYS. TECHNOL. SEMICOND. LIGHT EMMITTERS DETECTORS. PROC. INT. SYMP.; PUGNACHIUSO, ITALY; 1972)Conference Paper