High temperature (T > 300 K) light emitting diodes for 8-12 μm spectral rangeMALYUTENKO, V; MELNIK, A; MALYUTENKO, O et al.Infrared physics & technology. 2000, Vol 41, Num 6, pp 373-378, issn 1350-4495Article

Intraband vibronic coupling between excited electronic states in cis-polyacetylene by Raman resonance scatteringSASSI, P; CATALIOTTI, R. S.Molecular physics (Print). 1992, Vol 77, Num 5, pp 937-945, issn 0026-8976Article

Transition strength in superlattices under an in-plane magnetic fieldDE DIOS LEYVA, M; GALINDO, V; LOPEZ GONDAR, J et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 4, pp 1923-1926, issn 0163-1829Article

Intraband luminescence in ionic crystalsDEICH, R. G; ABDRAKHMANOV, M. S.Physica status solidi. B. Basic research. 1992, Vol 171, Num 1, pp 263-273, issn 0370-1972Article

Triple quantum well electron infrared modulatorBERGER, V; DUPONT, E; DELACOURT, D et al.Applied physics letters. 1992, Vol 61, Num 17, pp 2072-2074, issn 0003-6951Article

Orbital photogalvanic effects in quantum-confined structuresKARCH, J; TARASENKO, S. A; OLBRICH, P et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 35, issn 0953-8984, 355307.1-355307.9Article

Interband tunneling in narrow-gap heterostructuresVAS'KO, F. T; CROWNE, F. J.Soviet physics, JETP. 1991, Vol 73, Num 2, pp 352-358, issn 0038-5646Article

Normal incidence parallel intraband photoconductivity in GaAs/AlGaAs multiquantum wellsROSENCHER, E; MARTINET, E; BOCKENHOFF, E et al.Applied physics letters. 1991, Vol 58, Num 23, pp 2589-2591, issn 0003-6951, 3 p.Article

Rashba effect resonant tunneling spin filtersTING, David Z.-Y; CARTOIXA, Xavier; CHOW, David H et al.Proceedings of the IEEE. 2003, Vol 91, Num 5, pp 741-751, issn 0018-9219, 11 p.Article

Theory of interband tunneling in crystals with impuritiesARGYRES, P. N; SFIAT, S.Physics letters. A. 1992, Vol 166, Num 3-4, pp 260-266, issn 0375-9601Article

Bound-free intraband absorption in GaAs-Al_xGa_1-xAs semiconductor quantum wellsIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Applied physics letters. 1989, Vol 54, Num 3, pp 247-249, issn 0003-6951, 3 p.Article

Absorption intrabande dans les milieux semiconducteurs quantifiés par la dimensionKAZARYAN, A. M; GRIGORYAN, V. G.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1873-1876, issn 0015-3222Article

A⊥.p versus Φ for coupling electrons to interface optical phonons in quantum wellsBABIKER, M; CONSTANTINOU, N. C; RIDLEY, B. K et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 4, pp 2236-2243, issn 0163-1829Article

Inelastic Coulomb scattering in a diffusive two-band systemENTIN-WOHLMAN, O.Physical review. B, Condensed matter. 1992, Vol 45, Num 24, pp 14086-14094, issn 0163-1829Article

Coherent photogalvanic effect due to intraband and interband optical transitionsAGAFONOV, V. L; BELINICHER, V. I; TYBULEWICZ, A et al.Soviet physics. Solid state. 1992, Vol 34, Num 8, pp 1397-1400, issn 0038-5654Article

Bulk and edge plasmons in multiple-striped superlatticesGUMBS, G; ZHU, X.Solid state communications. 1989, Vol 70, Num 3, pp 389-392, issn 0038-1098Article

On the linewidths of intersubband transitions in GaAs-Al_xGa_1-xAs quantum wells in electric fieldIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Solid state communications. 1989, Vol 72, Num 9, pp 835-838, issn 0038-1098Article

Intraband photodetection at 1.3-1.5 μm in self-organized GaN/AlN quantum dotsDOYENNETTE, L; VARDI, A; GUILLOT, F et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 15, pp 3993-3997, issn 0370-1972, 5 p.Conference Paper

Si-based resonant inter- and intraband tunneling diodesEBERL, K; DUSCHL, R; SCHMIDT, O. G et al.Journal of crystal growth. 2001, Vol 227-28, pp 770-776, issn 0022-0248Conference Paper

The dispersion of the refractive index of III-V semiconductorsWENGANG BI; AIZHEN LI.Journal of applied physics. 1992, Vol 71, Num 6, pp 2826-2829, issn 0021-8979Article

Free charge carriers and the cathodoluminescence of NaI crystalDEICH, R. G; ABDRAKHMANOV, M. S; ERTS, D. P et al.Solid state communications. 1991, Vol 80, Num 1, pp 63-66, issn 0038-1098Article

Luminescence of Bi₄Ge₃O₁₂ (BGO) crystals under KrF and XeF laser excitationNAGLI, L.Journal of luminescence. 1993, Vol 55, Num 3, pp 139-143, issn 0022-2313Article

Resonant coupling of collective intra- and intersubband excitations in a parabolically confined electron systemKALOUDIS, M; ENSSLIN, K; WIXFORTH, A et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 19, pp 12469-12472, issn 0163-1829Article

Bound-free intraband absorption line shape in quantum-well structuresZAŁUZNY, M.Solid state communications. 1991, Vol 79, Num 11, pp 1013-1016, issn 0038-1098Article

On the linewidth of Γ- and X-valley intersubband optical transitions in semiconductor quantum wellsIKONIC, Z; INKSON, J. C; SRIVASTAVA, G. P et al.Solid state communications. 1990, Vol 73, Num 6, pp 421-424, issn 0038-1098Article