Optimization of transconductance in JFETs and MESFETsSOLHEIM, A. G; ROULSTON, D. J.Solid-state electronics. 1987, Vol 30, Num 12, pp 1267-1269, issn 0038-1101Article

A novel basis for quantum calculations in MESFET and JFET devicesBERGGREN, K.-F; NEWSON, D. J.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 246-255, issn 0268-1242Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Small-signal characteristics of InP junction FET'sKRUPPA, W; BOOS, J. B.IEEE electron device letters. 1987, Vol 8, Num 5, pp 223-225, issn 0741-3106Article

n-channel lateral insulated gate transistors: Part I-steady-state characterisPATTANAYAK, D. N; ROBINSON, A. L; CHOW, T. P et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1956-1963, issn 0018-9383Article

GaAs substrate materiel assessment using a high lateral resolution MESFET test patternSCHINK, H; PACKEISER, G; MALUENDA, J et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L369-L372, issn 0021-4922, part 2Article

On the photoresponsitivity of GaAs MESFETsPAPAIOANNOU, G. J.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K99-K102, issn 0031-8965Article

Optically controlled characteristics in an ion-implanted silicon MESFETSINGH, V. K; CHATTOPADHYAY, S. N; PAL, B. B et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 707-711, issn 0038-1101Article

Schottky-barrier field-effect transistors of 3C-SiCYOSHIDA, S; DAIMON, H; YAMANAKA, M et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2989-2991, issn 0021-8979Article

The effects of heavy doping on I-V characteristics of GaAs JFET and MESFET devicesTENG, K. W; LI, S. S.Solid-state electronics. 1986, Vol 29, Num 7, pp 683-686, issn 0038-1101Article

Theoretische Grundlagen beim Einsatz von iononsensitiven Feldeffekttransistoren = Bases théoriques pour la conception de transistors à effet de champ sensibles aux ions = Theoretical background for ionosensible field effect transistor designWILDNER, O; BOGDANOVA, N.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1985, Vol 27, Num 2, pp 283-288, issn 0372-7610Article

A nonlinear method to estimate model parameters of junction field-effect transistorIKEDA, H; MA HUAI-JIAN; YAMAMOTO, H et al.IEEE transactions on instrumentation and measurement. 1986, Vol 35, Num 3, pp 272-277, issn 0018-9456Article

Analysis of capacitance and transconductance frequency dispersions in MESFETS for surface characterizationGRAFFEUIL, J; HADJOUB, Z; FORTEA, J. P et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1087-1097, issn 0038-1101Article

Characteristics of separated-gate JFETsNANVER, L. K; GOUDENA, E. J. G.Electronics Letters. 1986, Vol 22, Num 23, pp 1244-1246, issn 0013-5194Article

Fully implanted p-column InP field-effect transistorWOODHOUSE, J. D; DONNELLY, J. P.IEEE electron device letters. 1986, Vol 7, Num 6, pp 387-389, issn 0741-3106Article

New mechanism of gate current in heterostructure insulated gate field-effect transistorsJUN HO BAEK; SHUR, M; DANIELS, R. R et al.IEEE electron device letters. 1986, Vol 7, Num 9, pp 519-521, issn 0741-3106Article

One dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wiresISMAIL, K; ANTONIADIS, D. A; SMITH, H. I et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1130-1132, issn 0003-6951, 3 p.Article

Analytical model for threshold voltage of ion-implanted short-channel IGFET'sMEHTA, S. K; MURALIDHARAN, R.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 1073-1074, issn 0018-9383Article

Distributions of 1/f noise in an epitaxial GaAs MESFETHASHIGUCHI, S; AOKI, N; OHKUBO, H et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 745-749, issn 0038-1101Article

New heterostructure junction field-effect transistor (HJFET)SIMMONS, J. G; TAYLOR, G. W.Electronics Letters. 1986, Vol 22, Num 22, pp 1167-1169, issn 0013-5194Article

Surface influence on the conductance DLTS spectra of GaAs MESFET'sBLIGHT, S. R; WALLIS, R. H; THOMAS, H et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1447-1453, issn 0018-9383Article

Model of threshold-voltage fluctuations in GaAs MESFET'sANHOLT, R; SIGMON, T. W.IEEE electron device letters. 1987, Vol 8, Num 1, pp 16-18, issn 0741-3106Article

Enhanced temperature dependence of MESFET characteristics by backgate and sidegate biasingOGAWA, M.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1987, Vol 70, Num 9, pp 847-856, issn 0387-236XArticle

Optimizing the performance of modified field effect transistorKHAN, A. A; LALAN SINGH.International journal of electronics. 1987, Vol 62, Num 3, pp 435-440, issn 0020-7217Article

Large-signal FET simulation using time domain and harmonic balance methodsBRAZIL, T; EL-RABAIE, S; CHOO, E et al.IEE proceedings. Part H. Microwaves, antennas and propagation. 1986, Vol 133, Num 5, pp 363-367, issn 0950-107XArticle