Modeling gate modulation effects on fet electrical characteristics with arbitrary doping profilesMIN-WEN CHIANG; CHOMA, J. JR; KAO, C et al.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 701-707, issn 0038-1101Article

The gate current noise of junction field effect transistorsSTOCKER, J. D; JONES, B. K.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 1, pp 93-102, issn 0022-3727Article

Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplificationHEINRICH, W; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 613-627, issn 0020-7217Article

Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface chargeBARTON, T. M; LADBROOKE, P. H.IEEE electron device letters. 1985, Vol 6, Num 3, pp 117-119, issn 0741-3106Article

Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article

Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article

Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article

On state modeling of power JFET structures in the bipolar modeBELLONE, S.Solid-state electronics. 1985, Vol 28, Num 4, pp 317-324, issn 0038-1101Article

The effects of substrate gettering in GaAs MESFET performanceFAA-CHING WANG; BUJATTI, M.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2839-2843, issn 0018-9383Article

Negative resistance characteristics in JFETARIVOLI, T; RAMKUMAR, K; SATYAM, M et al.AEU. Archiv für Elektronik und Übertragungstechnik. 1984, Vol 38, Num 5, issn 0001-1096, 340Article

Temperature behavior of insulated gate transistor characteristicsJAYANT BALIGA, B.Solid-state electronics. 1985, Vol 28, Num 3, pp 289-297, issn 0038-1101Article

Calculation of amplification factor u of static induced transistorXIONG CHENGKUN.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 3, pp 87-93, issn 0143-7100Article

Coupled transmission line analysis for harmonic generation in travelling-wave MESFETSTIWARI, D. C; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 687-692, issn 0020-7217Article

Experimental study of MESFET travelling-wave structuresFRICKE, K; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 629-638, issn 0020-7217Article

Frequency dispersion of sidegating transconductance of GaAs junction field-effect transistorsROACH, J. W; WIEDER, H. H; ZULEEG, R et al.Applied physics letters. 1985, Vol 47, Num 12, pp 1285-1287, issn 0003-6951Article

Current-drift suppressed InP MISFETs with new gate insulatorMIKAMI, O; OKAMURA, M; YAMAGUCHI, E et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1408-1409, issn 0021-4922, 1Article

Effets non locaux et de diffusion dans les transistors à effet de champ avec une porte sub-micronKAL'FA, A. A; PASHKOVSKIJ, A. B; TAGER, A. S et al.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1985, Vol 28, Num 12, pp 1583-1589, issn 0021-3462Article

The self-priming operation of GaAs IGFET's in the quasi-normally-off modeADAMA-ACQUAH, R. W; HARRISON, A. J; SWANSON, J. G et al.International journal of electronics. 1985, Vol 59, Num 1, pp 107-112, issn 0020-7217Article

A compact IGFET charge modelSHEU, B. J; SCHARFETTER, D. L; HU, C et al.IEEE transactions on circuits and systems. 1984, Vol 31, Num 8, pp 745-748, issn 0098-4094Article

Voltage-controlled negative resistance in a submicron vertical JFETTAMAMA, T; MURASE, K; MIZUSHIMA, Y et al.Solid-state electronics. 1984, Vol 27, Num 10, pp 855-866, issn 0038-1101Article

Coupled-mode analysis of travelling-wave MESFETSKRETSCHMER, K.-H; GRAMBOW, P; SIGULLA, T et al.International journal of electronics. 1985, Vol 8, Num 4, pp 639-648, issn 0020-7217Article

Examination of millimetre-wave frequency-gain behaviour of GaAs MESFETsKROWNE, C. M; NEIDERT, R. E.International journal of electronics. 1985, Vol 58, Num 3, pp 407-412, issn 0020-7217Article

FET characterization using gated-TLM structureBAIER, S. M; SHUR, M. S; LEE, K et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2824-2829, issn 0018-9383Article

Monte-Carlo particle model study of the influence of gate metallisation and gate geometry on the AC characteristics of GaAs MESFETsMOGLESTUE, C.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 6, pp 193-202, issn 0143-7100Article

Low-resistance submicrometre gates used for self alignmentISMAIL, K; BENEKING, H.Electronics Letters. 1984, Vol 20, Num 22, pp 942-943, issn 0013-5194Article