0.1-μm gate-length pseudomorphic HEMT'sCHAO, P. C; TIBERIO, R. C; DUH, K.-H. G et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 489-491, issn 0741-3106Article

An analytical DC model for the modulation-doped field-effect transistorMAJEWSKI, M. L.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 9, pp 1902-1910, issn 0018-9383Article

Two-dimensional electron gas structures with mobilities in excess of 3×10⁶ cm² V^-1 s^-1HARRIS, J. J; FOXON, C. T; BARNHAM, K. W. J et al.Journal of applied physics. 1987, Vol 61, Num 3, pp 1219-1221, issn 0021-8979Article

Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorHENDERSON, T; AKSUN, M. I; PENG, C. K et al.IEEE electron device letters. 1986, Vol 7, Num 12, pp 649-651, issn 0741-3106Article

Proposed size-effect high-electron-mobility transistorKORNREICH, P. G; WALSH, L; FLATTERY, J et al.Solid-state electronics. 1986, Vol 29, Num 4, pp 421-428, issn 0038-1101Article

The noise properties of high electron mobility transistorsBROOKES, T. M.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 1, pp 52-57, issn 0018-9383Article

The dependence of AlGaAs/GaAs MODFET isolation on material and device structureEZIS, A; LANGER, D. W; TU, C. W et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 807-811, issn 0038-1101Article

Theoretical analysis of the layer design of inverted single-channel heterostructure transistorsSVENSSON, S. P.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 5, pp 992-1000, issn 0018-9383, 2Article

Enhancement- and depletion-mode p-channel Ge_xSi_1-x modulation-doped FET'sPEARSALL, T. P; BEAN, J. C.IEEE electron device letters. 1986, Vol 7, Num 5, pp 308-310, issn 0741-3106Article

Extension of the approximate two-dimensional electron gas formulationPIERRET, R. F.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 7, pp 1279-1287, issn 0018-9383Article

High-mobility two-dimensional electron gas structure for modulation-doped GaAs transistorsCHRISTOU, A; VARMAZIS, K; HATZOPOULOS, Z et al.Applied physics letters. 1987, Vol 50, Num 14, pp 935-936, issn 0003-6951Article

Performance of a quarter-micrometer-gate ballistic electron HEMTAWANO, Y; KOSUGI, M; MIMURA, T et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 451-453, issn 0741-3106Article

60 GHz low-noise high-electron-mobility transistorsDUH, K. H. G; CHAO, P. C; SMITH, P. M et al.Electronics Letters. 1986, Vol 22, Num 12, pp 647-649, issn 0013-5194Article

A MODFET dc model with improved Pinchoff and saturation characteristicsROHDIN, H; ROBLIN, P.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 5, pp 664-672, issn 0018-9383Article

Charge control mechanism in MODFET's: a theoretical analysisKHONDKER, A. N; ANWAR, A. F. M; ISLAM, M. A et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1825-1826, issn 0018-9383Article

Redistribution of aluminum in MODFET ohmic contactsCHRISTOU, A; PAPANICOLAOU, N.Solid-state electronics. 1986, Vol 29, Num 2, pp 189-192, issn 0038-1101Article

Scaling properties of high electron mobility transistorsKIZILYALLI, I. C; HESS, K; LARSON, K. L et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1427-1433, issn 0018-9383Article

Two-dimensional charge-control model for MODFET'sYOUNG MIN KIM; ROBLIN, P.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1644-1651, issn 0018-9383Article

High electron mobility transistors (HEMTS) ― A reviewHILL, A. J; LADBROOKE, P. M.GEC journal of research. 1986, Vol 4, Num 1, pp 1-14, issn 0264-9187Article

High-efficiency millimeter-wave GaAs/GaAlAs power HEMT'sSAUNIER, P.IEEE electron device letters. 1986, Vol 7, Num 9, pp 503-505, issn 0741-3106Article

Physical limits of heterostructure field-effect transistors and possibilities of novel quantum field-effect devicesSAKAKI, H.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1845-1852, issn 0018-9197Article

Comparisons of microwave performance between single-gate and dual-gate MODFET'sCHEN, Y. K; WANG, G. W; RADULESCU, D. C et al.IEEE electron device letters. 1988, Vol 9, Num 2, pp 59-61, issn 0741-3106Article

An analytic model for HEMT's using new velocity-field dependenceCHIAN-SERN CHANG; FETTERMAN, H. R.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1456-1462, issn 0018-9383Article

An analytic model for high-electron-mobility transistorsCHANG, C. S; FETTERMAN, H. R.Solid-state electronics. 1987, Vol 30, Num 5, pp 485-491, issn 0038-1101Article

Analysis of MODFET microwave characteristicsROBLIN, P; SUNGCHOON KANG; KETTERSON, A et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 9, pp 1919-1928, issn 0018-9383Article