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kw.\*:("Transit time device")

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A TECHNIQUE FOR FABRICATING OXIDE PASSIVATED BARITT DIODES.ARMSTRONG BM; MOORE RA; GAMBLE HS et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1462-1463; BIBL. 3 REF.Article

FUNDAMENTAL LIMITATIONS OF THE CONTROLLED AVALANCHE TRANSIT TIME TRANSISTOR (CATT)CROSNIER Y; GERARD H; LEFEBVRE M et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 731-737; BIBL. 10 REF.Article

Fundamental performance limitations of transit-time devices: a zeroth-order analysisYEN-CHU WANG.International journal of electronics. 1985, Vol 58, Num 6, pp 1037-1040, issn 0020-7217Article

A new process of grid structure formation for end point detection during substrate thinning of transit time devicesAHMAD, S; AKHTAR, J; MUSTAFA, M et al.Microelectronics and reliability. 1985, Vol 25, Num 3, pp 447-450, issn 0026-2714Article

Committee report : transit-time ultrasonic flowmetersJournal - American Water Works Association. 1997, Vol 89, Num 7, pp 104-110, issn 0003-150XArticle

ETUDE EXPERIMENTALE DU TRANSISTOR A AVALANCHE CONTROLEE ET TEMPS DE TRANSIT - C.A.T.T. - MISE EN EVIDENCE DES MECANISMES FONDAMENTAUXGERARD HENRI.1979; ; FRA; DA. 1979; (7)-84 P.-PL.; 30 CM; BIBL. 14 REF.; TH. 3E CYCLE: SCI./LILLE 1/1979Thesis

THE INFLUENCE OF ETCH PROCEDURE ON THE STABILITY OF TRANSIT-TIME DEVICES.DE COGAN D.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 12; PP. 1918-1919; BIBL. 1 REF.Article

SI P+PNN+ TRAPATT DIODE.OKANO S; KURODA M; ITOH M et al.1977; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1977; NO 110; PP. 35-38; BIBL. 2 REF.Article

ETUDE ET REALISATION DE DISPOSITIFS HYPERFREQUENCES A TEMPS DE TRANSIT ET INJECTION PAR EFFET TRANSISTOR.ARMAND M; SALMER G; CROSNIER Y et al.1976; DGRST-7570685; FR.; DA. 1976; PP. (54P.); H.T. 28; BIBL. 11 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

DERIVATION OF THE LARGE SIGNAL AVALANCHE DIODE MODEL.KARASEK M.1978; ACTA TECH. C.S.A.V.; CESKOSL.; DA. 1978; VOL. 23; NO 1; PP. 11-22; BIBL. 10 REF.Article

HIGH-POWER PT SCHOTTKY BARITT DIODES.AHMAD S; FREYER J.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 238-239; BIBL. 6 REF.Article

Microwave tube development in Germany from 1920-1945DÖRING, H.International journal of electronics. 1991, Vol 70, Num 5, pp 955-978, issn 0020-7217Article

Millimeter-wave heterojunction MITATT diodesDOGAN, N. S; EAST, J. R; ELTA, M. E et al.IEEE transactions on microwave theory and techniques. 1987, Vol 35, Num 12, pp 1308-1316, issn 0018-9480Article

Gas velocity measurements using photothermal deflection spectroscopySELL, J. A.Applied optics. 1985, Vol 24, Num 22, pp 3725-3735, issn 0003-6935Article

A stochastic model for laser transit velocimeter correlograms in flows with high vorticityBALL, G. J.Journal of modern optics (Print). 1988, Vol 35, Num 5, pp 761-782, issn 0950-0340Article

Potential and limitations of Schottky-barrier BARRIT devicesEL-GABALY, M; AL-ZINKY, J.Solid-state electronics. 1984, Vol 27, Num 5, pp 433-440, issn 0038-1101Article

Modélisation et réalisation d'oscillateurs ATT de forte puissance dans la fenêtre des 94 GHz en régime d'oscillations continues = Modeling and realization of CW high power ATT oscillators in the 94 GHz windowDALLE, C; LLETI, G; GORAL, D et al.Annales des télécommunications. 1988, Vol 43, Num 5-6, pp 287-298, issn 0003-4347Article

Simultaneous measurements of dynamic values using the transit time methodDAUBARIS, G; KAUSINIS, S; RAGAUSKAS, A et al.IEEE transactions on instrumentation and measurement. 1992, Vol 41, Num 2, pp 251-255, issn 0018-9456Conference Paper

Small-signal charge transport in Schottky-barrier punch-through devicesEL-GABALY, M.Journal of applied physics. 1984, Vol 55, Num 2, pp 571-578, issn 0021-8979Article

THE CURRENT-VOLTAGE CHARACTERISTICS OF THE REACH-THROUGH BARITT DIODE WITH DOUBLE DRIFT LAYER STRUCTURE.SWEI YAM YU.1977; J. NATION. CHIAO TUNG UNIV.; TAIWAN; DA. 1977-09; VOL. 3; PP. 43-48; BIBL. 4 REF.Article

ON AN EXPERIMENTAL AND THEORETICAL DETERMINATION OF TUNNEL CURRENT WHICH SETS OFF THE AVALANCHE IN HIGH-EFFICIENCY IMPATT DIODES.KENNIS P; CHIVE M; CONSTANT E et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 753-755; BIBL. 9 REF.Article

INFLUENCE OF DIFFUSION ON THE SMALL-SIGNAL PROPERTIES OF MISAWA DIODES.SCHAWARZ R; THIM HW; POETZL HW et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 10; PP. 288-289; BIBL. 7 REF.Article

ANALYSE THERMODYNAMIQUE DU RENDEMENT DES GENERATEURS SEMICONDUCTEURSROJZIN NM.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1978; VOL. 21; NO 12; PP. 65-72; BIBL. 4 REF.Article

TRAPATT'S: HIGH POWER DEVICES FOR WIDE PULSE AND CW MICROWAVE APPLICATIONS.GLEASON KR; COHEN ED; BARK ML et al.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 4; PP. 344-348; BIBL. 11 REF.Article

ION-IMPLANTED PLANAR-MESA IMPATT DIODES FOR MILLIMETER WAVELENGTHSLEE DH; WELLER KP; THROWER WF et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 714-722; BIBL. 16 REF.Article

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