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Results 1 to 25 of 1749

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Asymmetric biasing for subgrid pattern adjustmentWONG, Alfred K; LIEBMANN, Lars W.SPIE proceedings series. 2001, pp 1548-1553, isbn 0-8194-4032-9, 2VolConference Paper

Layer-by-layer UV micromachining methodology of epoxy resist embedded microchannelsKITSARA, M; CHATZICHRISTIDI, M; NIAKOULA, D et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 1298-1301, issn 0167-9317, 4 p.Conference Paper

Development of advanced silylation process for 157-nm lithographySATOU, Isao; WATANABE, Manabu; WATANABE, Hiroyuki et al.Microelectronic engineering. 2001, Vol 57-58, pp 571-577, issn 0167-9317Conference Paper

Development of a Novel EUV Mask Protection Engineering Tool and Mask Handling TechniquesAMEMIYA, Mitsuaki; OTA, Kazuya; KAMONO, Takashi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66073G.1-66073G.8, issn 0277-786X, isbn 978-0-8194-6745-4Conference Paper

Impact of EUV light scatter on CD control as a result of mask density changesKRAUTSCHIK, Christof; ITO, Masaaki; NISHIYAMA, Iwao et al.SPIE proceedings series. 2002, pp 289-301, isbn 0-8194-4434-0, 2VolConference Paper

The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithographyLIN, Cheng-Ming; LOONG, Wen-An.Microelectronic engineering. 2001, Vol 57-58, pp 41-48, issn 0167-9317Conference Paper

Environmental data from the Engineering Test StandKLEBANOFF, L. E; GRUNOW, P. A; GRAHAM, S et al.SPIE proceedings series. 2002, pp 310-315, isbn 0-8194-4434-0, 2VolConference Paper

Naphthochinondiazid-haltige Photolacke für die Lithographie im UV-Bereich = Photoresists pour la lithographie UV contenant du diazide de naphtoquinone = Photoresists for UV-lithography containing naphtoquinone diazidPASCH, H; SCHULZE, H; LORKOWSKI, H.-J et al.Journal of information recording materials (1985). 1987, Vol 15, Num 2, pp 97-106, issn 0863-0453Article

Negative UV-NIL (NUV-NIL) - A mix-and-match NIL and UV strategy for realisation of nano- and micrometre structuresSKJOLDING, Lars Henrik Dæhli; TEIXIDOR, Genis Turon; EMNEUS, Jenny et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 654-656, issn 0167-9317, 3 p.Conference Paper

Resist and process implementation issues in future lithography processes for ULSI applicationsRONSE, K.Microelectronic engineering. 2003, Vol 67-68, pp 300-305, issn 0167-9317, 6 p.Conference Paper

Si-LiG process for inductive meso systemsBARBAROTO, Pedro R; DOI, Ioshiaki; FERREIRA, Luiz Otavio S et al.Applied surface science. 2003, Vol 212-13, pp 406-410, issn 0169-4332, 5 p.Conference Paper

Fabrication and Characterization of Polymer Hollow Microneedle Array Using UV Lithography Into MicromoldsWANG, Po-Chun; PAIK, Seung-Joon; SHUODAN CHEN et al.Journal of microelectromechanical systems. 2013, Vol 22, Num 5, pp 1041-1053, issn 1057-7157, 13 p.Article

Hypodermic-Needle-Like Hollow Polymer Microneedle Array: Fabrication and CharacterizationWANG, Po-Chun; PAIK, Seung-Joon; KIM, Seong-Hyok et al.Journal of microelectromechanical systems. 2014, Vol 23, Num 4, pp 991-998, issn 1057-7157, 8 p.Article

Potential and limitations of a T-NIL/UVL hybrid processSCHEER, H.-C; WISSEN, M; BOGDANSKI, N et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 851-853, issn 0167-9317, 3 p.Conference Paper

Optics ContaminationBAJT, Sasa.EUV lithography. SPIE Press Monograph. 2009, Vol 178, pp 227-259, isbn 978-0-8194-6964-9 978-0-4704-7155-5, 1Vol, 33 p.Book Chapter

Hybrid deep UV-e-beam lithography for the fabrication of dual damascene structuresMOLLARD, L; TEDESCO, S; DAL'ZOTTO, B et al.Microelectronic engineering. 2001, Vol 57-58, pp 269-275, issn 0167-9317Conference Paper

A novel spin coating technology for 248nm/193nm DUV lithography and low-k spin on dielectrics of 200/300mm wafersGURER, Emir; ZHONG, Tom; LEWELLEN, John et al.SPIE proceedings series. 2000, pp 805-817, isbn 0-8194-3617-8Conference Paper

Process margin enhancement for a 0.25 μm metal etch processCHUNG YI LEE; WEI WEN MA; ENG HOOI LIM et al.SPIE proceedings series. 2000, pp 865-880, isbn 0-8194-3617-8Conference Paper

Model-Based Mask Data Preparation (MB-MDP) for ArF and EUV Mask Process CorrectionHAGIWARA, Kazuyuki; BORK, Ingo; FUJIMURA, Aki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8081, issn 0277-786X, isbn 978-0-8194-8673-8, 80810U.1-80810U.8Conference Paper

Projection Systems for Extreme Ultraviolet LithographyHUDYMA, Russell M; SOUFLI, Regina.EUV lithography. SPIE Press Monograph. 2009, Vol 178, pp 135-159, isbn 978-0-8194-6964-9 978-0-4704-7155-5, 1Vol, 25 p.Book Chapter

Photoresists for Extreme Ultraviolet LithographyBRAINARD, Robert L.EUV lithography. SPIE Press Monograph. 2009, Vol 178, pp 383-448, isbn 978-0-8194-6964-9 978-0-4704-7155-5, 1Vol, 66 p.Book Chapter

Fabrication of SiO2 microdisk arrays for optics and light trapping experimentsSARAF, L. V; ENGELHARD, M. H; LEA, A. S et al.Microelectronic engineering. 2007, Vol 84, Num 12, pp 2799-2803, issn 0167-9317, 5 p.Article

Recent application results from the novel e-beam based mask repair system MeRiT<TM> MGEHRLICH, Christian; EDINGER, Klaus; HOFMANN, Thorsten et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 62810M.1-62810M.8, issn 0277-786X, isbn 0-8194-6356-6, 1VolConference Paper

Direct photopatterning of metal oxide materials using photosensitive organometallic precursor filmsBARSTOW, Sean J; JEYAKUMAR, Augustin; HENDERSON, Clifford L et al.SPIE proceedings series. 2002, pp 421-430, isbn 0-8194-4434-0, 2VolConference Paper

Preliminary results from key experiments on sources for EUV lithographyLEBERT, R; ASCHKE, L; POPRAWE, R et al.Microelectronic engineering. 2001, Vol 57-58, pp 87-92, issn 0167-9317Conference Paper

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