CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL/AL₂O₃/P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODESHAYASHI H; KIKUCHI K; YAMAGUCHI T et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 404-406; BIBL. 23 REF.Article

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EFFET DES ETATS LIMITROPHES SUR LES CARACTERISTIQUES ELECTROSTATIQUES DES STRUCTURES METAL-SEMICONDUCTEUR 1-DIELECTRIQUE-SEMICONDUCTEUR 2SYSOEV BI; BEZRYADIN NN; SYNOROV VF et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 355-361; BIBL. 8 REF.Article

APPARENT THRESHOLD CHARACTERISTICS OF PRETILTED LIQUID CRYSTAL CELLS.SHIMODA S; MADA H; KOBAYASHI S et al.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 8; PP. 1359-1364; BIBL. 11 REF.Article

USING THE C-V CURVE OF AN MIS DIODE TO EXAMINE THE TRAPPING LEVELS IN A SEMICONDUCTORS CONTAINING MANY DISCRETE TRAPSCOOK RK; KASOLD JP; JONES KA et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 391-397; BIBL. 34 REF.Article

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ELECTRICAL AND CHARGE STORAGE CHARACTERISTICS OF THE TANALUM OXIDE-SILICON DIOXIDE DEVICEANGLE RL; TALLEY HE.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 11; PP. 1277-1283; BIBL. 18 REF.Article

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ACCUMULATION AND DISCHARGING OF THE HOLE CHARGE IN OXIDE LAYERS OF MIS STRUCTURESANUFRIEV EV; GURTOV VA.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 107-111; ABS. RUS; BIBL. 11 REF.Article

SEMICONDUCTING PROPERTIES OF ZNO-GRAIN-BOUNDARY-ZNO JUNCTIONS IN CERAMIC VARISTORSLOU LF.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 570-572; BIBL. 9 REF.Article

ANALYSIS OF CAPACITANCE-VOLTAGE MEASUREMENTS ON HEAT-TREATED CU_2-2S/CDS HETEROJUNCTIONSHALL RB; SINGH VP.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6406-6412; BIBL. 16 REF.Article

CHARGE TRANSPORT IN THIN POLYMER FILMS AS SHOWN BY C-V MEASUREMENTS.MAISONNEUVE M; SEGUI Y; BUI AI et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 44; NO 2; PP. 209-216; BIBL. 11 REF.Article

A NEW ANALYTICAL EXPRESSION FOR THE IMPURITY PROFILE OF HYPERABRUPT VARICAP DIODES.STOJADINOVIC N.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 1; PP. K91-K94; BIBL. 8 REF.Article

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CHARGE HYSTERESIS MEASUREMENTS OF MOS STRUCTURESKAPLAN G.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1103-1105; BIBL. 3 REF.Article

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