Back reflection effect at the fundamental edge of semiconductors in modulated reflectivity measurementsGAGNON, R; BERNIER, G; JANDL, S et al.Solid state communications. 1987, Vol 64, Num 3, pp 361-365, issn 0038-1098Article

Line shapes of field-induced blue-phase-III selective reflectionsKITZEROW, H.-S; CROOKER, P. P; HEPPKE, G et al.Physical review letters. 1991, Vol 67, Num 16, pp 2151-2154, issn 0031-9007Article

First optical observations of superfluid ³HeMANNINEN, A. J; PEKOLA, J. P; KIRA, G. M et al.Physical review letters. 1992, Vol 69, Num 16, pp 2392-2395, issn 0031-9007Article

Investigation of optically allowed transitions of α-sulfur thin filmsABASS, A. K; HASEN, A. K; MISHO, R. H et al.Journal of applied physics. 1985, Vol 58, Num 4, pp 1640-1642, issn 0021-8979Article

Practical expression for reflectances of GaPENDO, T; TANIGUCHI, S; YAMANAKA, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 6, pp 920-921, issn 0021-4922, 1Article

Optical and photo-acoustic properties of semiconducting Ge-Sb-S glassesNIKOLIC, P. M; VUJATOVIC, S. S; TODOROVIC, D. M et al.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 30, pp L717-L724, issn 0022-3719Article

Properties of FeCl₃-intercalated graphite film prepared by heat treatment of poly(p-phenylene vinylene) filmUENO, H; YOSHINO, K.Physical review. B, Condensed matter. 1987, Vol 36, Num 15, pp 8138-8141, issn 0163-1829Article

Effects of different polishing methods on the reflectance of siliconPAULY, H.TMPM. Tschermaks mineralogische und petrographische Mitteilungen. 1986, Vol 35, Num 4, pp 261-273, issn 0041-3763Article

Long-range surface mode supported by very thin silver filmsYANG, F; BRADBERRY, G. W; SAMBLES, J. R et al.Physical review letters. 1991, Vol 66, Num 15, pp 2030-2032, issn 0031-9007, 3 p.Article

Three-dimensional shape and two-dimensional surface reflectance contributions to face recognition : an application of three-dimensional morphingO'TOOLE, A. J; VETTER, T; BLANZ, V et al.Vision research (Oxford). 1999, Vol 39, Num 18, pp 3145-3155, issn 0042-6989Article

Structural phase transition in polydiacetylene crystals and exciton band folding'GUTMAN, A. I; SEL'KIN, A. V; LEPA, E et al.Soviet physics. Solid state. 1992, Vol 34, Num 1, pp 166-167, issn 0038-5654Article

Photoluminescence of thin oxide layers on metallic substrates (Cu₂O/Cu and ZnO/Zn)LEFEZ, B; LENGLET, M.Chemical physics letters. 1991, Vol 179, Num 3, pp 223-226, issn 0009-2614, 4 p.Article

Time-resolved reflectivity studies of the GaAs(100)/oxide and GaAs(100)/ZnSe interfaceCHEVILLE, R. A; HAYNES, W. B; HALAS, N. J et al.Applied physics letters. 1991, Vol 59, Num 12, pp 1476-1478, issn 0003-6951Article

In situ time-resolved reflectivity measurements of Al under excimer laser planarization conditionsCAREY, P. G; WORATSCHEK, B. J; BACHMANN, F et al.Applied physics letters. 1990, Vol 57, Num 15, pp 1499-1501, issn 0003-6951, 3 p.Article

Photoinduced currents in PZT thin filmsBUTLER, M. A; MARTIN, S. J; LAND, C. E et al.Applied optics. 1989, Vol 28, Num 23, pp 5105-5109, issn 0003-6935Article

Thermoluminescence in synthetic langbeiniteDESHMUKH, B. T; BODADE, S. V; MOHARIL, S. V et al.Physica status solidi. A. Applied research. 1988, Vol 106, Num 1, pp K107-K111, issn 0031-8965Article

Birefringence in YAlO₃:Nd between 2-4.7 eVCERMAKOVA, O; VISNOVSKY, S.Czechoslovak journal of physics. 1986, Vol 36, Num 4, pp 537-542, issn 0011-4626Article

Interference of exciton polaritons in PbI₂ thin plateletsHAYASHI, T.Journal of the Physical Society of Japan. 1986, Vol 55, Num 6, pp 2043-2052, issn 0031-9015Article

Transmission and damping of excitonic polaritons in CdSBROSER, I; PANTKE, K.-H; ROSENZWEIG, M et al.Physica status solidi. B. Basic research. 1985, Vol 132, Num 2, pp K117-K120, issn 0370-1972Article

Experimental research of reflection variation sign change at T ∼ 300 K in LaSrCuO ceramicKUDRIAVTSEV, Eugene M; ZOTOV, Sergey D.Physica. C. Superconductivity. 2004, Vol 408-10, pp 736-738, issn 0921-4534, 3 p.Conference Paper

Application of reflectance studies to layered samples: SiOx on InSbREMOND, G; HOLLOWAY, P. H; CAYE, R et al.Surface and interface analysis. 1988, Vol 11, Num 3, pp 134-143, issn 0142-2421Article

Temperature dependence of the quantized states in a GaAs-Ga_1-xAl_xAs superlatticeKANGARLU, A; CHANDRASEKHAR, H. R; CHANDRASEKHAR, M et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 2, pp 1035-1038, issn 0163-1829Article

Absorption edge studies of CuGaS₂ single crystalKOBAYASHI, S; TSUBOI, N; KANEKO, F et al.Japanese journal of applied physics. 1987, Vol 26, Num 2, pp 220-225, issn 0021-4922, 1Article

Anisotropy of colour properties in γ-Mo₄O₁₁SHIMODA, M; YAGISAWA, K; OKOCHI, M et al.Journal of materials science letters. 1987, Vol 6, Num 11, pp 1331-1332, issn 0261-8028Article

Elaboration, caractérisation et propriétés électroniques de couches minces de nitrure de niobium et d'oxyde de niobiumCabanel, Régis; Mazuer, J.1986, 190 p.Thesis