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Plasma-deposited amorphous silicon carbide films for micromachined fluidic channelsWUU, D.-S; HORNG, R.-H; CHAN, C.-C et al.Applied surface science. 1999, Vol 144-45, pp 708-712, issn 0169-4332Conference Paper

Photocurrent multiplication in amorphous silicon carbide filmsHIRAMOTO, M; YOSHIMURA, K; YOKOYAMA, M et al.The Journal of imaging science and technology. 1993, Vol 37, Num 2, pp 192-196, issn 1062-3701Article

A-SiC: H low-k deposition as copper diffusion barrier layer in advanced microelectronic interconnectionsCHARLES-ALFRED, C; JOUSSEAUME, V.Surface & coatings technology. 2007, Vol 201, Num 22-23, pp 9260-9263, issn 0257-8972, 4 p.Conference Paper

Large area double p―i―n heterostructure for signal multiplexing and demultiplexing in the visible rangeVIEIRA, M; LOURO, P; FERNANDES, M et al.Thin solid films. 2009, Vol 517, Num 23, pp 6435-6439, issn 0040-6090, 5 p.Conference Paper

Fine-tuning of the spectral collection efficiency in multilayer junctionsFEMANDES, M; FANTONI, A; LOURO, P et al.Thin solid films. 2006, Vol 511-12, pp 84-88, issn 0040-6090, 5 p.Conference Paper

Bias sensitive multispectral structures for imaging applicationsVIEIRA, M; FANTONI, A; FEMANDES, M et al.Thin solid films. 2007, Vol 515, Num 19, pp 7566-7570, issn 0040-6090, 5 p.Conference Paper

Integrated Incandescent Microlamp Coupled to SiOxNy WaveguideCARVALHO, D. O; CARRENO, M. N. P; REHDER, G. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7208, issn 0277-786X, isbn 978-0-8194-7454-4 0-8194-7454-1, 1Vol, 72080U.1-72080U.10Conference Paper

Detection of FRET signals with a wavelength sensitive device based on a-SiC:HLOURO, P; VIEIRA, M; COSTA, J et al.Applied surface science. 2013, Vol 275, pp 49-53, issn 0169-4332, 5 p.Conference Paper

Influence of process pressure on HW-CVD deposited a-SiC:H filmsSWAIN, Bibhu P.Surface & coatings technology. 2006, Vol 201, Num 3-4, pp 1132-1137, issn 0257-8972, 6 p.Article

Photochemical vapour deposition of hydrogenated amorphous silicon-carbon thin films by using a Xe2* excimer lampREDONDAS, X; GONZALEZ, P; CHIUSSI, S et al.Applied surface science. 1996, Vol 106, pp 55-59, issn 0169-4332Conference Paper

The quasineutrality condition in amorphous semiconductors : Reformulation of the 'lifetime/relaxation' criterionSHAH, A; HUBIN, J; PLATZ, R et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 548-551, issn 0022-3093, 1Conference Paper

High quality hydrogenated amorphous silicon carbon layers as obtained by a particular photochemical vapor deposition methodMANFREDOTTI, C; FIZZOTTI, F; OSENGA, C et al.Physica status solidi. A. Applied research. 1993, Vol 135, Num 1, pp 191-198, issn 0031-8965Article

Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurementsSALEH, R; MUNISA, L; BEYER, W et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 517-520, issn 0022-3093, 4 p.Conference Paper

Electronic density of states in a-SiC:H filmsDEMICHELIS, F; CROVINI, G; GIORGIS, F et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1015-1015, issn 0022-3093, 1 p., 2Conference Paper

Optimization of relevant deposition parameters for high quality a-SiC:H filmsDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Solar energy materials and solar cells. 1995, Vol 37, Num 3-4, pp 315-321, issn 0927-0248Article

Deposition of hydrogenated amorphous-carbon films by vacuum ultraviolet photo-CVDFUJII, T; YOSHIMOTO, M; FUYUKI, T et al.Applied surface science. 1994, Vol 79-80, Num 1-4, pp 316-320, issn 0169-4332Conference Paper

Surface-enhanced Raman scattering of amorphous silicon-carbon filmsTZOLOV, M. B; TZENOV, N. V; DIMOVA-MALINOVSKA, D. I et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2396-2398, issn 0003-6951Article

Effect of structural variations in amorphous silicon based single and multi-junction solar cells from numerical analysisKABIR, M. I; IBRAHIM, Zahari; SOPIAN, Kamaruzzaman et al.Solar energy materials and solar cells. 2010, Vol 94, Num 9, pp 1542-1545, issn 0927-0248, 4 p.Conference Paper

Small-angle X-ray scattering from nano-Si embedded a-SiC:H deposited by hot-wire chemical vapor depositionSWAIN, Bibhu P; SWAIN, Bhabani S; CHUNG, Yung-Bin et al.Solid state sciences. 2009, Vol 11, Num 8, pp 1408-1411, issn 1293-2558, 4 p.Article

Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSISUNIL KUMAR SINGH; KUMBHAR, Alka A; KOTHARI, Mayur et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 318-321, issn 0040-6090, 4 p.Conference Paper

Si-rich a-SiC:H thin films: Structural and optical transformations during thermal annealingKÜNLE, Matthias; KALTENBACH, Thomas; LOPER, Philipp et al.Thin solid films. 2010, Vol 519, Num 1, pp 151-157, issn 0040-6090, 7 p.Article

Maintaining Cu metal integrity on low-k IMDs with a nanometer thick a-SiC:H film obtained by HWCVDSINGH, S. K; KUMBHAR, A. A; DUSANE, R. O et al.Thin solid films. 2008, Vol 516, Num 5, pp 785-788, issn 0040-6090, 4 p.Conference Paper

Investigation of the tribological behavior and its relationship to the microstructure and mechanical properties of a-SiC:H films elaborated by low frequency plasma assisted chemical vapor depositionSOUM-GLAUDE, A; RAMBAUD, G; GRILLO, S. E et al.Thin solid films. 2010, Vol 519, Num 4, pp 1266-1271, issn 0040-6090, 6 p.Article

Infrared absorption of a-SiC:H as a function of the annealing temperatureMURRI, R; PINTO, N; GIULIODORI, S et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 5-7, pp 341-344, issn 0957-4522, 4 p.Conference Paper

Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVDPATIL, Samadhan B; KUMBHAR, Alka A; SARASWAT, Shweta et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 257-260, issn 0040-6090, 4 p.Conference Paper

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