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Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation ModesFENG LIU; JIN HE; YUE FU et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 816-826, issn 0018-9383, 11 p.Article

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BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate ControlKHANDELWAL, Sourabh; SINGH CHAUHAN, Yogesh; CALVIN HU, Chenming et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2019-2026, issn 0018-9383, 8 p.Article

Systematic Compact Modeling of Correlated Noise in Bipolar TransistorsHERRICHT, Jörg; SAKALAS, Paulius; RAMONAS, Mindaugas et al.IEEE transactions on microwave theory and techniques. 2012, Vol 60, Num 11, pp 3403-3412, issn 0018-9480, 10 p.Article

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Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJANDHYALA, Srivatsava; ABRAHAM, Aby; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 7, pp 1974-1979, issn 0018-9383, 6 p.Article

An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFETJANDHYALA, Srivatsava; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 6, pp 1663-1671, issn 0018-9383, 9 p.Article

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A unified compact model of electrical and thermal 3-D spreading resistance between eccentric rectangular and circular contactsKARMALKAR, Shreepad; VISHNU MOHAN, P; PRESENNA KUMAR, B et al.IEEE electron device letters. 2005, Vol 26, Num 12, pp 909-912, issn 0741-3106, 4 p.Article

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Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire TransistorRAKESH KUMAR, P; MAHAPATRA, Santanu.IEEE transactions on nanotechnology. 2011, Vol 10, Num 1, pp 121-128, issn 1536-125X, 8 p.Article

Physics, Technology, and Modeling of Complementary Asymmetric MOSFETsBULUCEA, Constantin; BAHL, Sandeep R; FRENCH, William D et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2363-2380, issn 0018-9383, 18 p.Article

A PSP-Based Small-Signal MOSFET Model for Both Quasi-Static and Nonquasi-Static OperationsAARTS, Annemarie C. T; SMIT, Geert D. J; SCHOLTEN, Andries J et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 6, pp 1424-1432, issn 0018-9383, 9 p.Article

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