Carrier dynamics in quantum well lasersTHRÄNHARDT, A; KOCH, S. W; HADER, J et al.Optical and quantum electronics. 2006, Vol 38, Num 4-6, pp 361-368, issn 0306-8919, 8 p.Conference Paper

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Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsNUSHER, B. F; WARMINSKI, T; DIEING, T et al.Surface science. 2007, Vol 601, Num 24, pp 5800-5802, issn 0039-6028, 3 p.Conference Paper

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Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasersHEALY, Sorcha B; O'REILLY, Eoin P.IEEE journal of quantum electronics. 2006, Vol 42, Num 5-6, pp 608-615, issn 0018-9197, 8 p.Article

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; PUUSTINEN, J et al.Journal of luminescence. 2013, Vol 136, pp 347-350, issn 0022-2313, 4 p.Article

Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure : A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wellsKUDRAWIEC, R; MISIEWICZ, J.Applied surface science. 2006, Vol 253, Num 1, pp 80-84, issn 0169-4332, 5 p.Conference Paper

Alloy composition and optoelectronic properties of dilute GaSb_1-xN_x by pseudo-potential calculationsGUEDDIM, A; ZERDOUM, R; BOUARISSA, N et al.Physica. B, Condensed matter. 2007, Vol 389, Num 2, pp 335-342, issn 0921-4526, 8 p.Article

Point defects in dilute nitride III-N-As and III-N-PCHEN, W. M; BUYANOVA, I. A; TU, C. W et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 545-551, issn 0921-4526, 7 p.Conference Paper

Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxyKOLHATKAR, Gitanjali; BOUCHERIF, Abderraouf; VALDIVIA, Christopher E et al.Journal of crystal growth. 2013, Vol 380, pp 256-260, issn 0022-0248, 5 p.Article

Signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate from magnetic resonance studiesVORONA, I. P; MCHEDLIDZE, T; IZADIFARD, M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 571-574, issn 0921-4526, 4 p.Conference Paper

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laserLIM, J. J; MACKENZIE, R; SUJECKI, S et al.Optical and quantum electronics. 2009, Vol 40, Num 14-15, pp 1181-1186, issn 0306-8919, 6 p.Conference Paper

Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWsMIGUEL-SANCHEZ, J; GUZMAN, A; JAHN, U et al.Microelectronics journal. 2006, Vol 37, Num 12, pp 1552-1556, issn 0959-8324, 5 p.Conference Paper

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Excitation transfer between extended band states and N-related localized states in GaP_1-xN_x with x up to 1%NIEBLING, T; LAPP, T; KAMPMANN, J et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 222-225, issn 1386-9477, 4 p.Conference Paper

Instability of structural defects generated by electron irradiation in GaInNAs quantum wellsPAVELESCU, E.-M; DUMITRESCU, M; GUINA, M et al.Journal of luminescence. 2014, Vol 154, pp 584-586, issn 0022-2313, 3 p.Article