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Results 1 to 25 of 78071

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Symétrie des niveaux d'impureté profonds dans les chalcopyritesGUBANOV, A. I.Fizika tverdogo tela. 1985, Vol 27, Num 9, pp 2724-2726, issn 0367-3294Article

Effects of dust grain charge fluctuation on an obliquely propagating dust acoustic solitary potential in a magnetized dusty plasmaMAMUN, A. A; HASSAN, M. H. A.Journal of plasma physics. 2000, Vol 63, pp 191-200, issn 0022-3778, 2Article

Electron correlation effect on the semiconducting La2-xSrxCu1-zMzO4 (M = Zn and Ni) : Zn-and Ni-induced Néel orderingITOH, Y; KATO, I; MACHI, T et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 14, issn 0953-8984, 145290.1-145290.6Conference Paper

Double zinc diffusion fronts in InP: correlation with models of varying charge transfer during interstitial-substitutional interchangeKAZMIERSKI, K; DE CREMOUX, B.Japanese journal of applied physics. 1985, Vol 24, Num 2, pp 239-242, issn 0021-4922Article

Impurity-to-band tunneling in semiconductorsCHAUDHURI, S; COON, D. D; KARUNASIRI, R. P. G et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5476-5478, issn 0021-8979Article

Rare earth elements in α-Ti: A first-principles investigationSONG LU; HU, Qing-Miao; RUI YANG et al.Computational materials science. 2009, Vol 46, Num 4, pp 1187-1191, issn 0927-0256, 5 p.Article

Behavior of 3d-transition metals in different SiC polytypesJUSTO, J. F; MACHADO, W. V. M; ASSALI, L. V. C et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 378-381, issn 0921-4526, 4 p.Conference Paper

Dopant states in α-Si:H. I: Tight-binding-model resultsROBERTSON, J.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4647-4657, issn 0163-1829Article

Substitutional diffusion of transition metal impurities in siliconZHONG, L; SHIMURA, F.Japanese journal of applied physics. 1993, Vol 32, Num 8B, pp L1113-L1116, issn 0021-4922, 2Article

Microscopic theory of impurity-defect reactions and impurity diffusion in siliconCAR, R; KELLY, P. J; OSHIYAMA, A et al.Physical review letters. 1985, Vol 54, Num 1, pp 360-363, issn 0031-9007Article

Crystal site location of dopants in semiconductors using a 100-keV electron probeTAFTØ, J; SPENCE, J. C. H; FEJES, P et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5014-5015, issn 0021-8979Article

The effect of doses, irradiation temperature, and doped impurities in the thermoluminescence response of NaCl crystalsHERNANDEZ-MEDINA, Antonio; NEGRON-MENDOZA, Alicia; RAMOS-BERNAL, Sergio et al.Radiation measurements. 2013, Vol 56, pp 369-373, issn 1350-4487, 5 p.Conference Paper

Strain enhanced exchange interaction between impurities in grapheneFENG PENG; WEI HONGBIN.Physica. B, Condensed matter. 2012, Vol 407, Num 17, pp 3434-3436, issn 0921-4526, 3 p.Article

Influence des contraintes internes propres et de la distorsion du spectre vibrationnel sur la formation des défauts et leur diffusion dans les semiconducteursVASILEVSKIJ, M. I; GOLEMSHTOK, G. M; PANTELEEV, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 1, pp 126-132, issn 0367-3294Article

Paramètre d'interaction spin-orbite de l'ion Ni2+ dans les semiconducteurs AII BVIKRAMAR, V. M; MEL'NICHUK, S. V.Optika i spektroskopiâ. 1984, Vol 57, Num 3, pp 546-547, issn 0030-4034Article

Influence of impurity scattering on the critical temperature of superconductors with a partial gap in the electron spectrumGABOVICH, A. M; SHPIGEL, A. S.Journal of low temperature physics. 1983, Vol 51, Num 5-6, pp 581-599, issn 0022-2291Article

The effect of elastic anisotropy on the direct spin-lattice relaxation process in cubic crystalsBERTRAND, P.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 30, pp 5913-5920, issn 0022-3719Article

A study on the anisotropic interaction between two substitutional magnetic impurities in a realistic metallic hostSATTER, M. A.Physica status solidi. B. Basic research. 1991, Vol 163, Num 2, pp K107-K109, issn 0370-1972Article

TL response dependence on the dose rate and its consequencesKVASNICKA, J.The International journal of applied radiation and isotopes. 1983, Vol 34, Num 4, pp 713-715, issn 0020-708XArticle

Toxicological overview of impurities in pharmaceutical productsJACOBSON-KRAM, David; MCGOVERN, Timothy.Advanced drug delivery reviews. 2007, Vol 59, Num 1, pp 38-42, issn 0169-409X, 5 p.Article

Diffusion of sulfur-35 into silicon using an elemental vapor sourceROLLERT, F; STOLWIJK, N. A; MEHRER, H et al.Applied physics letters. 1993, Vol 63, Num 4, pp 506-508, issn 0003-6951Article

Interpretation of thermoluminescence of transition metal ions in diamond using cluster model calculationsPASLOVSKY, L; LOWTHER, J. E; NAM, T. L et al.Journal of luminescence. 1993, Vol 55, Num 4, pp 167-172, issn 0022-2313Article

Electronic configuration of iron in diamondLOWTHER, J. E.Physics letters. A. 1984, Vol 104, Num 5, pp 273-276, issn 0375-9601Article

Symmetric lattice distorsions around deep-level impurities in semiconductors: vacancy and substitutional Cu in siliconLINDEFELT, U.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4510-4518, issn 0163-1829Article

Luminescence properties of impurity-doped semiconductor nanoparticlesKANEMITSU, Yoshihiko; ISHIZUMI, Atsushi.Journal of luminescence. 2006, Vol 119-20, pp 161-166, issn 0022-2313, 6 p.Conference Paper

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