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Carbon-Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash MemoryJING PU; KIM, Sun-Jung; LEE, Seung-Hwan et al.IEEE electron device letters. 2008, Vol 29, Num 7, pp 688-690, issn 0741-3106, 3 p.Article

Photoluminescence and electroluminescence imaging of carrot defect in 4H-SiC epitaxyLIU, Kendrick X; STAHLBUSH, Robert E; TWIGG, Mark E et al.Journal of electronic materials. 2007, Vol 36, Num 4, pp 297-306, issn 0361-5235, 10 p.Article

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Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements : Silicon carbide devices and technologyLELIS, Aivars J; HABERSAT, Daniel; GREEN, Ronald et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 1835-1840, issn 0018-9383, 6 p.Article

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P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N₂0 AnnealingNOBORIO, Masato; SUDA, Jun; KIMOTO, Tsunenobu et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 9, pp 1953-1958, issn 0018-9383, 6 p.Article

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Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETsNOBORIO, Masato; KANZAKI, Yosuke; SUDA, Jun et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 9, pp 1954-1962, issn 0018-9383, 9 p.Article