kw.\*:("surface-potential-based model")
Results 1 to 4 of 4
Selection :
Benchmark Tests for MOSFET Compact Models With Application to the PSP ModelXIN LI; WEIMIN WU; OLSEN, C. Michael et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 2, pp 243-251, issn 0018-9383, 9 p.Article
A compact model of the pinch-off region of 100 nm MOSFETs based on the surface-potentialNAVARRO, Dondee; MIZOGUCHI, Takeshi; NAKAYAMA, Noriaki et al.IEICE transactions on electronics. 2005, Vol 88, Num 5, pp 1079-1086, issn 0916-8524, 8 p.Article
Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS DevicesTANAKA, Akihiro; ORITSUKI, Yasunori; KIKUCHIHARA, Hideyuki et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 2072-2080, issn 0018-9383, 9 p.Article
BSIM5 : An advanced charge-based MOSFET model for nanoscale VLSI circuit simulationJIN HE; XUEMEI XI; HUI WAN et al.Solid-state electronics. 2007, Vol 51, Num 3, pp 433-444, issn 0038-1101, 12 p.Article