11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)DA SILVA, E. F; DE AZEVEDO, W. M.Applied surface science. 2008, Vol 255, Num 3, issn 0169-4332, 183 p.Conference Proceedings

Application of spectral reflectance to the monitoring of ZnO nanorod growthGHONG, T. H; KIM, Y. D; AHN, E et al.Applied surface science. 2008, Vol 255, Num 3, pp 746-748, issn 0169-4332, 3 p.Conference Paper

Preparation and characterization of conducting polymer/silver hexacyanoferrate nanocompositeDE AZEVEDO, W. M; DE MATTOS, I. L; NAVARRO, M et al.Applied surface science. 2008, Vol 255, Num 3, pp 770-774, issn 0169-4332, 5 p.Conference Paper

Surface passivation technology for III-V semiconductor nanoelectronicsHASEGAWA, Hideki; AKAZAWA, Masamichi.Applied surface science. 2008, Vol 255, Num 3, pp 628-632, issn 0169-4332, 5 p.Conference Paper

Electrical characterization of high-k gate dielectrics on semiconductorsMA, T. P.Applied surface science. 2008, Vol 255, Num 3, pp 672-675, issn 0169-4332, 4 p.Conference Paper

Formation of CdS nanoparticles using starch as capping agentRODRIGUEZ, P; MUNOZ-AGUIRRE, N; MARTINEZ, E. San-Martin et al.Applied surface science. 2008, Vol 255, Num 3, pp 740-742, issn 0169-4332, 3 p.Conference Paper

Metal-semiconductor interface in extreme temperature conditionsBULAT, L. P; EROFEEVA, I. A; VOROBIEV, Yu. V et al.Applied surface science. 2008, Vol 255, Num 3, pp 659-661, issn 0169-4332, 3 p.Conference Paper

Polarization catastrophe in nanostructures doped in photonic band gap materialsSINGH, Mahi R.Applied surface science. 2008, Vol 255, Num 3, pp 653-655, issn 0169-4332, 3 p.Conference Paper

Characterization of surface states by SPV-transientSINKKONEN, J; NOVIKOV, S; VARPULA, A et al.Applied surface science. 2008, Vol 255, Num 3, pp 662-664, issn 0169-4332, 3 p.Conference Paper

Numerical analysis of gate leakage current in AlGaN Schottky diodesOSVALD, J.Applied surface science. 2008, Vol 255, Num 3, pp 793-795, issn 0169-4332, 3 p.Conference Paper

A monolithically integrated CMOS labchip using sensor devicesSCHÄFER, H; SCHÖLER, L; SEIBEL, K et al.Applied surface science. 2008, Vol 255, Num 3, pp 646-648, issn 0169-4332, 3 p.Conference Paper

Calculation of electronic spectra of semiconductor nanostructures using the mirror boundary conditionsVOROBIEV, Yu. V; HORLEY, P. P; GORLEY, P. N et al.Applied surface science. 2008, Vol 255, Num 3, pp 665-668, issn 0169-4332, 4 p.Conference Paper

Low dimensional silicon structures for photonic and sensor applicationsADAMO, R; ANOPCHENKO, A; HOSSAIN, S. M et al.Applied surface science. 2008, Vol 255, Num 3, pp 624-627, issn 0169-4332, 4 p.Conference Paper

Praseodymium silicide formation at the Pr₂O₃/Si interfaceWATAHIKI, Tatsuro; TINKHAM, Brad P; JENICHEN, Bernd et al.Applied surface science. 2008, Vol 255, Num 3, pp 758-760, issn 0169-4332, 3 p.Conference Paper

RHEED intensity oscillation of C₆₀ growth on GaAs substratesNISHINAGA, J; KAWAHARAZUKA, A; HORIKOSHI, Y et al.Applied surface science. 2008, Vol 255, Num 3, pp 682-684, issn 0169-4332, 3 p.Conference Paper

Semiconductor nanocrystals obtained by colloidal chemistry for biological applicationsSANTOS, B. S; FARIAS, P. M. A; FONTES, A et al.Applied surface science. 2008, Vol 255, Num 3, pp 796-798, issn 0169-4332, 3 p.Conference Paper

Analysis of interface layers by spectroscopic ellipsometryKIM, T. J; YOON, J. J; KIM, Y. D et al.Applied surface science. 2008, Vol 255, Num 3, pp 640-642, issn 0169-4332, 3 p.Conference Paper

Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technologyICHIKAWA, M; UCHIDA, S; SHKLYAEV, A. A et al.Applied surface science. 2008, Vol 255, Num 3, pp 669-671, issn 0169-4332, 3 p.Conference Paper

Thermal lens investigation in amorphous SiNANJOS, V; ANDRADE, A. A; BELL, M. J. V et al.Applied surface science. 2008, Vol 255, Num 3, pp 698-700, issn 0169-4332, 3 p.Conference Paper

Enhancement of the thermal transport in a culture medium with Au nanoparticlesJIMENEZ-PEREZ, J. L; GUTIERREZ FUENTES, R; MALDONADO ALVARADO, E et al.Applied surface science. 2008, Vol 255, Num 3, pp 701-702, issn 0169-4332, 2 p.Conference Paper

Proton radiation effects in quantum dot lasersGONDA, Shun-Ichi; TSUTSUMI, Hiroyuki; ISHIGAMI, Ryoya et al.Applied surface science. 2008, Vol 255, Num 3, pp 676-678, issn 0169-4332, 3 p.Conference Paper

Vacuum ultraviolet ellipsometry investigation of ultrathin organic films and their heterostructuresSINDU, J; RUDRA, S; LEHMANN, D et al.Applied surface science. 2008, Vol 255, Num 3, pp 694-697, issn 0169-4332, 4 p.Conference Paper

Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductorsYAN, Z. W; GENXIAO LI.Applied surface science. 2008, Vol 255, Num 3, pp 637-639, issn 0169-4332, 3 p.Conference Paper

Monitoring the non-radiative relaxation time of PpIX solution with Au nanoparticles using Photoacoustic SpectroscopyJIMENEZ-PEREZ, J. L; CRUZ-OREA, A; MALDONADO ALVARADO, E et al.Applied surface science. 2008, Vol 255, Num 3, pp 643-645, issn 0169-4332, 3 p.Conference Paper

A conducting polymer-silicon heterojunction as a new ultraviolet photodetectorCARDENAS, J. R; DE VASCONCELOS, E. A; DE AZEVEDO, W. M et al.Applied surface science. 2008, Vol 255, Num 3, pp 688-690, issn 0169-4332, 3 p.Conference Paper