2006 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2007, Vol 36, Num 8, issn 0361-5235, 292 p.Conference Proceedings

Elimination of inclusions in (CdZn)Te substrates by post-grown annealingBELAS, E; BUGAR, M; GRILL, R et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1025-1030, issn 0361-5235, 6 p.Conference Paper

Effect of dislocations on VLWIR HgCdTe photodiodesPARODOS, T; FITZGERALD, E. A; HU, S et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1068-1076, issn 0361-5235, 9 p.Conference Paper

Synchrotron X-ray based characterization of CdZnTe crystalsDUFF, Martine C; HUNTER, Douglas B; NUESSLE, Patterson et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1092-1097, issn 0361-5235, 6 p.Conference Paper

Diffusion of selenium in liquid-phase epitaxy-grown Hg_0.7Cd_0.22TeZHAO, W; GOLDING, T. D; LITTLER, C. L et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 822-825, issn 0361-5235, 4 p.Conference Paper

Electrical characteristics of PEDOT: PSS organic contacts to HgCdTeEMELIE, P. Y; CAGIN, E; SIDDIOUI, J et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 841-845, issn 0361-5235, 5 p.Conference Paper

Fast and reversible wettability transitions on ZnO nanostructuresZHANG, Z; CHEN, H; ZHONG, J et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 895-899, issn 0361-5235, 5 p.Conference Paper

MCT-on-silicon negative luminescence devices with high efficiencyLINDLE, J. R; BEWLEY, W. W; VURGAFTMAN, I et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 988-992, issn 0361-5235, 5 p.Conference Paper

Nucleation of ZnTe on the As-terminated Si(112) surfaceJAIME-VASQUEZ, M; MARTINKA, M; JACOBS, R. N et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 905-909, issn 0361-5235, 5 p.Conference Paper

Fast detection of precipitates and oxides on CdZnTe surfaces by spectroscopic ellipsometryBADANO, G; MILLION, A; CANAVA, B et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1077-1084, issn 0361-5235, 8 p.Conference Paper

Selective growth of CdTe on Si(211) : First-principle calculationsHUANG, Y; CHEN, X. S; DUAN, H et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 925-930, issn 0361-5235, 6 p.Conference Paper

Comparing ICP and ECR etching of HgCdTe, CdZnTe, and CdTeSTOLTZ, A. J; VARESI, J. B; BENSON, J. D et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1007-1012, issn 0361-5235, 6 p.Conference Paper

Surface structure of molecular beam epitaxy (211)B HgCdTeBENSON, J. D; ALMEIDA, L. A; CARMODY, M. W et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 949-957, issn 0361-5235, 9 p.Conference Paper

Magneto-transport characterization of p-type HgCdTeTSEN, G. K. O; MUSCA, C. A; DELL, J. M et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 826-831, issn 0361-5235, 6 p.Conference Paper

Comparative study of HgCdTe etchants : An electrical characterizationMALLICK, Shubhrangshu; KIRAN, Rajni; GHOSH, Siddhartha et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 993-999, issn 0361-5235, 7 p.Conference Paper

Electron and hole transport in bulk ZnO : A full band monte carlo studyBERTAZZI, Francesco; GOANO, Michele; BELLOTTI, Enrico et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 857-863, issn 0361-5235, 7 p.Conference Paper

Accurate determination of the matrix composition profile of Hg_1-xCd_xTe by secondary ion mass spectrometryWANG, Larry; WANG, Alice; PRICE, Steve et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 910-912, issn 0361-5235, 3 p.Conference Paper

Status of HgCdTe bicolor and dual-band infrared focal arrays at LETIDESTEFANIS, G; BAYLET, J; BALLET, P et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1031-1044, issn 0361-5235, 14 p.Conference Paper

Design and assessment of metal-organic vapor phase epitaxy : Grown dual waveband infrared detectorsGORDON, N. T; ABBOTT, P; GIESS, J et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 931-936, issn 0361-5235, 6 p.Conference Paper

Chemical etching of CdTe in aqueous solutions of H₂O₂-Hl-citric acidIVANITS'KA, V. G; MORAVEC, P; FRANC, J et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1021-1024, issn 0361-5235, 4 p.Conference Paper

High-performance LWIR MBE-grown HgCdTe/Si focal plane arraysBORNFREUND, Richard; ROSBECK, Joe P; DELYON, Terry J et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1085-1091, issn 0361-5235, 7 p.Conference Paper

Extended X-ray absorption fine structure study of arsenic in HgCdTePLISSARD, S; GIUSTI, G; POLGE, B et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 919-924, issn 0361-5235, 6 p.Conference Paper

Gain and dark current characteristics of planar HgCdTe avalanche photo diodesPERRAIS, Gwladys; GRAVRAND, Olivier; BAYLET, Jacques et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 963-970, issn 0361-5235, 8 p.Conference Paper

Screening effects in high resistivity CdTe for X-ray and gamma ray detectorsKUBAT, J; FRANC, J; GRILL, R et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 871-876, issn 0361-5235, 6 p.Conference Paper

Excimer laser etching process of CdTe crystals for formation of deep vertical trenchesYASUDA, K; NIRAULA, M; NAKAMURA, K et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 837-840, issn 0361-5235, 4 p.Conference Paper