Micro- and nanoengineering 94LEHMANN, H. W; STAUFER, U; VETTINGER, P et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, issn 0167-9317, 577 p.Conference Proceedings

Nanostructures in biologyWILKINSON, C. D. W.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 61-65, issn 0167-9317Conference Paper

Micromechanical structures for data storageREILEY, T. C; FAN, L.-S; MAMIN, H. J et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 495-498, issn 0167-9317Conference Paper

Simulation of single electron circuitsRÖSNER, W; HOFMANN, F; VOGELSANG, T et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 55-58, issn 0167-9317Conference Paper

Fabrication of gratings for integrated optoelectronicsHAGBERG, M; ERIKSSON, N; KJELLBERG, T et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 435-438, issn 0167-9317Conference Paper

Compatibility between two SR steppersTSUYUZAKI, H; FUKUDA, M; SUZUKI, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 291-294, issn 0167-9317Conference Paper

Micromachining by accelerated nanoparticle erosionGSPANN, J.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 517-520, issn 0167-9317Conference Paper

Proximity correction for 3D structuresDUBONOS, S. V; GAIFULLIN, B. N; RAITH, H. F et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 195-198, issn 0167-9317Conference Paper

Challenges for 0.35-0.25 μm optical lithographyVAN DEN HOVE, L; RONSE, K.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 357-365, issn 0167-9317Conference Paper

DUV lithography for 0.35 μm CMOS processingVAN DRIESSCHE, V; GOETHALS, A.-M; OP DE BEECK, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 243-246, issn 0167-9317Conference Paper

Multilayer coated reflective optics for Extreme UV lithographyLOUIS, E; VOORMA, H.-J; KOSTER, N. B et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 235-238, issn 0167-9317Conference Paper

Non-conventional techniques for optical lithographyDÄNDLIKER, R; GRAY, S; CLUBE, F et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 205-211, issn 0167-9317Conference Paper

Proximity correction for high CD accuracy and process toleranceWAAS, T; EISENMANN, H; VÖLLINGER, O et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 179-182, issn 0167-9317Conference Paper

The nanometer age: challenge and chanceROHRER, H.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 3-15, issn 0167-9317Conference Paper

Enhanced e-beam system for the fabrication of optical elementsPRONGUE, D; ROTHUIZEN, H; VASEY, F et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 163-166, issn 0167-9317Conference Paper

Profile analysis and the isofocal threshold in SEM metrologyBRACHER, B. H; JONCKHEERE, R.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 531-534, issn 0167-9317Conference Paper

Voltage contrast maps using the time-dispersive electron spectrometerDINNIS, A. R.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 523-526, issn 0167-9317Conference Paper

A new mechanism of nanostructure formation with the STMGRATZKE, U; SIMON, G.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 35-38, issn 0167-9317Conference Paper

Doping profiling with scanning surface harmonic microscopyJOHNSON, M. B; BOURGOIN, J.-P; MICHEL, B et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 539-542, issn 0167-9317Conference Paper

Fabrication of single-crystalline aluminum nanostructuresFORTUIN, A. W; VAN DER KOLK, M; ZIJLSTRA, T et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 117-120, issn 0167-9317Conference Paper

MEBES® 4500 raster scan techniques: calibration and controlBENVENISTE, A; NORTON, K; PRIOR, R et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 147-150, issn 0167-9317Conference Paper

Nitrogen implanted etch-stop layers in siliconPANEVA, R; TEMMEL, G; BURTE, E et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 509-512, issn 0167-9317Conference Paper

Performance of pupil-filtering stepper-lens systemFUKUDA, H; KOBAYASHI, Y; TAWA, T et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 213-216, issn 0167-9317Conference Paper

Point and 2-dimensional measurement of phase shifting masksOZAKI, Y; HORIUCHI, T; HARADA, K et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 255-258, issn 0167-9317Conference Paper

10-nm silicon lines fabricated in (110) siliconNAMATSU, H; NAGASE, M; KURIHARA, K et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 71-74, issn 0167-9317Conference Paper