Proceedings of the 2nd Franco-Italian Symposium on SiO² and Advanced DielectricsSPINOLO, G; VEDDA, A; AUTRAN, J.-L et al.Journal of non-crystalline solids. 1999, Vol 245, issn 0022-3093, 259 p.Conference Proceedings

(100) Silicon oxidation : first principle investigation of basic mechanismsESTEVE, A; DJAFARI ROUHANI, M; ESTEVE, D et al.Journal of non-crystalline solids. 1999, Vol 245, pp 150-153, issn 0022-3093Conference Paper

Low-energy vibrational dynamics of hydrogenated silica gelsBARTOLOTTA, A; CARINI, G; D'ANGELO, G et al.Journal of non-crystalline solids. 1999, Vol 245, pp 9-14, issn 0022-3093Conference Paper

Synthesis of silver clusters in silica-based glasses for optoelectronics applicationsBORSELLA, E; CATTARUZZA, E; DE MARCHI, G et al.Journal of non-crystalline solids. 1999, Vol 245, pp 122-128, issn 0022-3093Conference Paper

Properties of stacked dielectric films composed of SiO₂/Si₃N₄/SiO₂SANTUCCI, S; LOZZI, L; PASSACANTANDO, M et al.Journal of non-crystalline solids. 1999, Vol 245, pp 224-231, issn 0022-3093Conference Paper

Defect radial repartitions in ultraviolet irradiated germanosilicate optical fibresGOUTALAND, F; BOUKENTER, A; OUERDANE, Y et al.Journal of non-crystalline solids. 1999, Vol 245, pp 110-114, issn 0022-3093Conference Paper

Thermal conductivity of SiO₂ films by scanning thermal microscopyCALLARD, S; TALLARIDA, G; BORGHESI, A et al.Journal of non-crystalline solids. 1999, Vol 245, pp 203-209, issn 0022-3093Conference Paper

Influence of polycide deposition on the reliability of wet and nitrided oxidesYCKACHE, K; BOIVIN, P; BAIGET, F et al.Journal of non-crystalline solids. 1999, Vol 245, pp 97-103, issn 0022-3093Conference Paper

Photoluminescence activity in natural silica excited in the vacuum-UV rangeCANNAS, M; BARBERA, M; BOSCAINO, R et al.Journal of non-crystalline solids. 1999, Vol 245, pp 190-195, issn 0022-3093Conference Paper

Electron irradiation effects on thin MOS capacitorsCANDELORI, A; PACCAGNELLA, A; CAMMARATA, M et al.Journal of non-crystalline solids. 1999, Vol 245, pp 238-244, issn 0022-3093Conference Paper

Mid-gap states in the forbidden gap of silicaPROSANDEYEV, S. A; BOUREAU, G; CARNIATO, S et al.Journal of non-crystalline solids. 1999, Vol 245, pp 161-168, issn 0022-3093Conference Paper

Study of oxygen vacancies in silica using ultra soft pseudopotentialsCAPRON, N; CARNIATO, S; BOUREAU, G et al.Journal of non-crystalline solids. 1999, Vol 245, pp 146-149, issn 0022-3093Conference Paper

Vacuum ultraviolet absorption of silica samplesANEDDA, A; CARBONARO, C. M; CORPINO, R et al.Journal of non-crystalline solids. 1999, Vol 245, pp 183-189, issn 0022-3093Conference Paper

Active waveguides in ferroelectric crystals by ion exchangeCACCAVALE, F; SADA, C; SEGATO, F et al.Journal of non-crystalline solids. 1999, Vol 245, pp 135-140, issn 0022-3093Conference Paper

Structural properties and photoluminescence spectra of coloured LiF films on SiO₂FORNARINI, L; MANCINI, A; MARTELLI, S et al.Journal of non-crystalline solids. 1999, Vol 245, pp 141-145, issn 0022-3093Conference Paper

Temperature effects on the Si/SiO₂ interface defects and suboxide distributionJOLLY, F; CANTIN, J. L; ROCHET, F et al.Journal of non-crystalline solids. 1999, Vol 245, pp 217-223, issn 0022-3093Conference Paper

Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO₂VON BARDELEBEN, H. J; CANTIN, J. L; GOSSET, L. G et al.Journal of non-crystalline solids. 1999, Vol 245, pp 169-174, issn 0022-3093Conference Paper

Theoretical study using density functional theory of defects in amorphous silicon dioxideCOURTOT-DESCHARLES, A; PAILLET, P; LERAY, J. L et al.Journal of non-crystalline solids. 1999, Vol 245, pp 154-160, issn 0022-3093Conference Paper

On the electrical conductivity in porous silicon under light and electron beamsDAFINEI, A. S; DAFINEI, A. A.Journal of non-crystalline solids. 1999, Vol 245, pp 92-96, issn 0022-3093Conference Paper

On the use of dielectric films in temperature measurements : application to the realization of capacitive thermometers for temperatures <5 KBOUTARD-GABILLET, D; ARANDA, P; LADIEU, F et al.Journal of non-crystalline solids. 1999, Vol 245, pp 27-32, issn 0022-3093Conference Paper

Terbium(III) doped silica-xerogels : effect of aluminium(III) co-dopingARMELLINI, C; FERRARI, M; MONTAGNA, M et al.Journal of non-crystalline solids. 1999, Vol 245, pp 115-121, issn 0022-3093Conference Paper

On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxideNEBEL, F; JOURDAIN, M.Journal of non-crystalline solids. 1999, Vol 245, pp 67-72, issn 0022-3093Conference Paper

Investigation of low field and high temperature SiO₂ and ONO leakage currents using the floating gate techniqueDE SALVO, B; GHIBAUDO, G; PANANAKAKIS, G et al.Journal of non-crystalline solids. 1999, Vol 245, pp 104-109, issn 0022-3093Conference Paper

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injectionsGOGUENHEIM, D; BRAVAIX, A; VUILLAUME, D et al.Journal of non-crystalline solids. 1999, Vol 245, pp 41-47, issn 0022-3093Conference Paper

Surface morphology of nitrided thin thermal SiO₂ studied by atomic force microscopyTALLARIDA, G; CAZZANIGA, F; CRIVELLI, B et al.Journal of non-crystalline solids. 1999, Vol 245, pp 210-216, issn 0022-3093Conference Paper