Proceedings of the European Materials Research Society 2001-Symposium F Amorphous and Crystalline Silicon Carbide: Material and ApplicationsCALCAGNO, Lucia; HALLEN, Anders; MARTINS, Rodrigo et al.Applied surface science. 2001, Vol 184, Num 1-4, issn 0169-4332, 516 p.Conference Proceedings

Laser CVD of cubic SiC nanocrystalsKAMLAG, Y; GOOSSENS, A; COLBECK, I et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 118-122, issn 0169-4332Conference Paper

LSP image sensors based on SiC heterostructuresVIEIRA, M; FERNANDES, M; FANTONI, A et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 471-476, issn 0169-4332Conference Paper

High quality SiC applications in radiation dosimetryBRUZZI, M; NAVA, F; PINI, S et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 425-430, issn 0169-4332Conference Paper

Silicon carbide: from amorphous to crystalline materialFOTI, G.Applied surface science. 2001, Vol 184, Num 1-4, pp 20-26, issn 0169-4332Conference Paper

Crystallisation mechanism of amorphous silicon carbideCALCAGNO, L; MUSUMECI, P; ROCCAFORTE, F et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 123-127, issn 0169-4332Conference Paper

Contact formation in SiC devicesPECZ, B.Applied surface science. 2001, Vol 184, Num 1-4, pp 287-294, issn 0169-4332Conference Paper

Peculiarities of preparing a-SiC:H films from methyltrichlorosilaneRUSAKOV, G. V; IVASHCHENKO, L. A; IVASHCHENKO, V. I et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 128-134, issn 0169-4332Conference Paper

Focused ion beam sputtering investigations on SiCBISCHOFF, L; TEICHERT, J; HEERA, V et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 372-376, issn 0169-4332Conference Paper

Silicon carbide photodiodes: Schottky and PINIP structuresCABRITA, A; PEREIRA, L; BRIDA, D et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 437-442, issn 0169-4332Conference Paper

Growth of silicon carbide: process-related defectsYAKIMOVA, R; SYVÄJARVI, M; IAKIMOV, T et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 27-36, issn 0169-4332Conference Paper

Progress towards SiC productsHARRIS, C. I; SAVAGE, S; KONSTANTINOV, A et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 393-398, issn 0169-4332Conference Paper

Writing cobalt FIB implantation into 6H:SiCBISCHOFF, L; TEICHERT, J.Applied surface science. 2001, Vol 184, Num 1-4, pp 336-339, issn 0169-4332Conference Paper

Electrical characterization of SiC/Si heterostructures with Ge-modified interfacesPEZOLDT, J; FÖRSTER, Ch; WEIH, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 79-83, issn 0169-4332Conference Paper

Correlation between the carbon and hydrogen contents with the gas species and the plasma impedance of silicon carbide films produced by PECVD techniqueMARTINS, R; SILVA, V; AGUAS, H et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 101-106, issn 0169-4332Conference Paper

C adsorption and diffusion at the Si(0 0 1) surface: implications for SiC growthCICERO, Giancarlo; CATELLANI, Alessandra.Applied surface science. 2001, Vol 184, Num 1-4, pp 113-117, issn 0169-4332Conference Paper

Effects of short-range disorder upon electronic properties of a-SiC alloysIVASHCHENKO, V. I; SHEVCHENKO, V. I.Applied surface science. 2001, Vol 184, Num 1-4, pp 137-143, issn 0169-4332Conference Paper

Hydrogen-boron complex formation and dissociation in 4H-silicon carbideJANSON, M. S; HALLEN, A; LINNARSSON, M. K et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 257-262, issn 0169-4332Conference Paper

Improvement of high temperature stability of nickel contacts on n-type 6H-SiCROCCAFORTE, F; LA VIA, F; RAINERI, V et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 295-298, issn 0169-4332Conference Paper

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperaturesCAPANO, M. A.Applied surface science. 2001, Vol 184, Num 1-4, pp 317-322, issn 0169-4332Conference Paper

Preparation and characterization of SiO₂/6H-SiC metal-insulator-semiconductor structure using TEOS as source materialKAMIMURA, K; KOBAYASHI, D; OKADA, S et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 346-349, issn 0169-4332Conference Paper

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivationCHUNG, G. Y; WILLIAMS, J. R; TIN, C. C et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 399-403, issn 0169-4332Conference Paper

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substratesKUZNETSOV, N. I; MYNBAEVA, M. G; MELNYCHUK, G et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 483-486, issn 0169-4332Conference Paper

Role of the defects under porous silicon carbide formationSAVKINA, N. S; SOROKIN, L. M; HUTCHISON, J. L et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 252-256, issn 0169-4332Conference Paper

SiC(1 0 0) ordered film growth by C₆₀ decomposition on Si(1 0 0) surfacesMORAS, P; MAHNE, N; FERRARI, L et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 50-54, issn 0169-4332Conference Paper