Selection of Papers From the 2007 Semiconducting and Insulating Materials Conference (SIMC-XIV)WANG, Zhiming M; KIESEL, Peter.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, issn 0957-4522, 241 p.Conference Proceedings

InP based semiconductor structures for radiation detectionPROCHAZKOVA, Olga; GRYM, Jan; PEKAREK, Ladislav et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 770-775, issn 0957-4522, 6 p.Conference Paper

Negative magnetoresistance in SiC heteropolytype junctionsLEBEDEV, Alexander Alexandrovich; ABRAMOV, P. L; AGRINSKAYA, N. V et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 793-796, issn 0957-4522, 4 p.Conference Paper

Radiation effects in natural quartz crystalsBAHADUR, Harish; TISSOUX, Hélène; USAMI, Teruo et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 709-713, issn 0957-4522, 5 p.Conference Paper

Growth and characterization of III-N bulk crystalsFRAZIER, R. M; FEIGELSON, B. N; TWIGG, M. E et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 845-848, issn 0957-4522, 4 p.Conference Paper

Investigation of NiO_x-based contacts on p-GaNLIDAY, J; HOTOVY, I; SIMBRUNNER, C et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 855-862, issn 0957-4522, 8 p.Conference Paper

Optical and structural properties of SiC nanocrystalsMORALES RODRIGUEZ, M; DIAZ CANO, A; TORCHYNSKA, T. V et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 682-686, issn 0957-4522, 5 p.Conference Paper

High-k gate stack Hf_xTi_1-xON/SiO₂ for SiC MOS devicesLIEN, L. M; LAI, P. T.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 894-897, issn 0957-4522, 4 p.Conference Paper

Temperature dependence of ZnO thin films grown on Si substrateKIM, Y. Y; AHN, C. H; KANG, S. W et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 749-754, issn 0957-4522, 6 p.Conference Paper

Buffer-trapping effects on current slump in AlGaN/GaN HEMTsNAKAJIMA, Atsushi; HORIO, Kazushige.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 735-739, issn 0957-4522, 5 p.Conference Paper

Cobalt substituted ZnO thin films: a potential candidate for spintronicsKANWAL PREET BHATTI; VIVEK KUMAR MALIK; CHAUDHARY, Sujeet et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 849-854, issn 0957-4522, 6 p.Conference Paper

Structural and magnetic properties of MnAs/GaAs ferromagnetic semiconductor nanocomposite materialKWIATKOWSKI, Adam; WASIK, Dariusz; KAMINSKA, Maria et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 740-743, issn 0957-4522, 4 p.Conference Paper

Growth and characteristics of ternary Zn_1-xMg_xO films using magnetron co-sputteringSI WOO KANG; YOUNG YI KIM; CHEOL HYOUN AHN et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 755-759, issn 0957-4522, 5 p.Conference Paper

Independent control of InAs quantum dot density and size on Al_xGa_1-xAs surfacesMAXWELL ANDREWS, Aaron; SCHRAMBÖCK, Matthias; ROCH, Tomas et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 714-719, issn 0957-4522, 6 p.Conference Paper

Investigation of deep levels in InGaAs channels comprising thin layers of InAsDOBBERT, J; KUNETS, Vas P; MORGAN, T. Al et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 797-800, issn 0957-4522, 4 p.Conference Paper

Latest developments in GaN-based quantum devices for infrared optoelectronicsMONROY, Eva; GUILLOT, Fabien; LECONTE, Sylvain et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 821-827, issn 0957-4522, 7 p.Conference Paper

Nitrogen doping of SiC thin films deposited by RF magnetron sputteringAMORIM FRAGA, Mariana; MASSI, Marcos; OLIVEIRA, Ivo C et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 835-840, issn 0957-4522, 6 p.Conference Paper

The recent advances of research on p-type ZnO thin filmDAI, L. P; DENG, H; MAO, F. Y et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 727-734, issn 0957-4522, 8 p.Conference Paper

Molecular beam epitaxy of semipolar AlN(112̄2) and GaN(1122) on m-sapphireLAHOURCADE, Lise; BELLET-AMALRIC, Edith; MONROY, Eva et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 805-809, issn 0957-4522, 5 p.Conference Paper

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic studyZHIGUO WANG; XIAOTAO ZU; LI YANG et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 863-867, issn 0957-4522, 5 p.Conference Paper

Pulsed laser deposited ZnO films and their humidity sensing behaviorDIXIT, Shobhna; SRIVASTAVA, Anchal; SHUKLA, R. K et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 788-792, issn 0957-4522, 5 p.Conference Paper

Growth condition dependence of zinc oxide nanostructures on Si substrates in an electrochemical processJINGBIAO CUI.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 908-914, issn 0957-4522, 7 p.Conference Paper

Microstructure and luminescence properties of Co-doped SnO₂ nanoparticles synthesized by hydrothermal methodFANG, L. M; ZU, X. T; LI, Z. J et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 868-874, issn 0957-4522, 7 p.Conference Paper

Shallow and deep donors in n-type ZnO characterized by admittance spectroscopySEGHIER, D; GISLASON, H. P.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 687-691, issn 0957-4522, 5 p.Conference Paper

Characterization of deep centers in semi-insulating SiC and HgI₂: application of discharge current transient spectroscopyMATSUURA, Hideharu; TAKAHASHI, Miyuki; NAGATA, Shunji et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 810-814, issn 0957-4522, 5 p.Conference Paper