Challenges in the crystal growth of Li₂CuO₂ and LiMnP0₄WIZENT, Nadja; BEHR, Günter; LÖSER, Wolfgang et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 995-999, issn 0022-0248, 5 p.Conference Paper

Crystal growth and scintillation properties of Cs₃CeCl₆ and CsCe₂Cl₇ZHURAVLEVA, M; YANG, K; MELCHER, C. L et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 809-812, issn 0022-0248, 4 p.Conference Paper

Crystal growth of Ca₃SiO₄Br₂: New photoluminescence bromosilicate hostZHIGUO XIA; QIANG LI; GUOWU LI et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 958-961, issn 0022-0248, 4 p.Conference Paper

Crystal growth of CsCl-type Yb_0.24Sn_0.76RuKLIMCZUK, T; WANG, C. H; ZANDBERGEN, H. W et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1005-1008, issn 0022-0248, 4 p.Conference Paper

Defect structure of 4H silicon carbide ingotsLEBEDEV, A. O; AVROV, D. D; BULATOV, A. V et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 394-396, issn 0022-0248, 3 p.Conference Paper

Effect of Al doping on the microstructure properties of YMn_1―xAl_xO₃ZHANG, A. M; ZHU, W. H; WU, X. S et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 912-915, issn 0022-0248, 4 p.Conference Paper

Effect of SiO₂ on Bi₁₂SiO₂₀ crystals grown by hydrothermal technologyXIAOLING HE; WEINING ZHOU; DONGPING LI et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 900-903, issn 0022-0248, 4 p.Conference Paper

Response-time-improved ZnO scintillator by impurity dopingKANO, Masataka; WAKAMIYA, Akira; SAKAI, Kohei et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 788-790, issn 0022-0248, 3 p.Conference Paper

Adaptive phase field modeling of grain boundary diffusionYEH, S. Y; CHEN, C. C; LAN, C. W et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 46-50, issn 0022-0248, 5 p.Conference Paper

Growth and annealing characterization of ZnGeP₂ crystalYONGJUAN YANG; YUJUN ZHANG; QINGTIAN GU et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 721-724, issn 0022-0248, 4 p.Conference Paper

Growth and characterization of Al-doped CsLiB₆O₁₀ crystalXUESONG YU; HU, Zhang-Gui.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1171-1174, issn 0022-0248, 4 p.Conference Paper

Growth and characterization of α and γ-glycine single crystalsSRINIVASAN, T. P; INDIRAJITH, R; GOPALAKRISHNAN, R et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 762-767, issn 0022-0248, 6 p.Conference Paper

Growth kinetics of KH2PO4 crystals in relation to solution macrocompositionVORONTSOV, D. A; ERSHOV, V. P; PORTNOV, V. N et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 122-124, issn 0022-0248, 3 p.Conference Paper

Hydrothermal growth of scandium-doped ZnO crystalsZUO, Yan-Bin; LU, Fu-Hua; ZHANG, Hai-Xia et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 513-515, issn 0022-0248, 3 p.Conference Paper

Investigation of nitrogen behaviors during Czochralski silicon crystal growthXUEGONG YU; DEREN YANG; HOSHIKAWA, Keigo et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 178-182, issn 0022-0248, 5 p.Conference Paper

Numerical simulation of ammonothermal growth processes of GaN crystalsJIANG, Yan-Ni; CHEN, Qi-Sheng; PRASAD, V et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 411-414, issn 0022-0248, 4 p.Conference Paper

Skeletal morphologies and crystallographic orientations of olivine, diopside and plagioclaseZHAO, Shan-Rong; RONG LIU; WANG, Qin-Yan et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 135-140, issn 0022-0248, 6 p.Conference Paper

Thermodynamic analysis on HVPE growth of InGaN ternary alloyHANAOKA, Koshi; MURAKAMI, Hisashi; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 441-445, issn 0022-0248, 5 p.Conference Paper

The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, ChinaCHEN, Chuangtian; KUECH, Thomas F; NISHINAGA, Tatau et al.Journal of crystal growth. 2011, Vol 318, Num 1, issn 0022-0248, 1203 p.Conference Proceedings

Chemical etching orientation of ZnGeP₂ single crystalsJIANG CHENG; SHIFU ZHU; BEIJUN ZHAO et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 729-732, issn 0022-0248, 4 p.Conference Paper

Theoretical investigations for the polytypism in semiconductorsITO, Tomonori; KONDO, Tomoyuki; AKIYAMA, Toru et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 141-144, issn 0022-0248, 4 p.Conference Paper

Crucible-free pulling of germanium crystalsWÜNSCHER, Michael; LÜDGE, Anke; RIEMANN, Helge et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1039-1042, issn 0022-0248, 4 p.Conference Paper

Crystal growth and scintillation properties of Ce³⁺-doped KGd₂Cl₇ZHURAVLEVA, M; YANG, K; GREEN, A et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 796-799, issn 0022-0248, 4 p.Conference Paper

Flux growth and characterization of Gd₂GeMoO₈ and Yb³⁺:Gd₂GeMoO₈ crystalsLAN XU; QING-LI ZHANG; ZHOU, Wen-Long et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 991-994, issn 0022-0248, 4 p.Conference Paper

Grinding-induced homochirality in crystal growthSAITO, Yukio; HYUGA, Hiroyuki.Journal of crystal growth. 2011, Vol 318, Num 1, pp 93-98, issn 0022-0248, 6 p.Conference Paper