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Advanced short-time thermal processing for Si-based CMOS devices II (San Antonio TX, 10-12 May 2004)Öztürk, M.C; Chen, L.J; Timans, P.J et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-406-3, XII, 428 p, isbn 1-56677-406-3Conference Proceedings

Enhancement of manufacturibility in polycrystalline silicon process by using disilane precursor at 65nm CMOS technologyYUANNING CHEN; HAOWEN BU; CUNNINGHAM, Kevin L et al.Proceedings - Electrochemical Society. 2004, pp 244-251, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Gate-source/drain extension overlap control with angled implants: TCAD modeling studyTHIRUPAPULIYUR, Sunderraj; AL-BAYATI, Amir; JAIN, Amitabh et al.Proceedings - Electrochemical Society. 2004, pp 127-134, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Formation and characterization of nickel silicided shallow N+P junctions using implantation through silicide and low temperature furnace annealingWANG, Chao-Chun; CHEN, Mao-Chieh.Proceedings - Electrochemical Society. 2004, pp 183-190, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

The effect of ramp rate: Short process time and partial reactions on cobalt and nickel silicide formationPAGES, X; VAN DER JEUGD, K; KUZNETSOV, V et al.Proceedings - Electrochemical Society. 2004, pp 174-182, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO2/Pt and HfO2/Hf systemsSAYAN, S; BARTYNSKI, R. A; GARFUNKEL, E et al.Proceedings - Electrochemical Society. 2004, pp 255-263, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Atomic layer deposition of dielectrics and electrodes for embedded-dram capacitor cells in 90 nm technology and beyondGERRITSEN, E; JOURDAN, N; PIAZZA, M et al.Proceedings - Electrochemical Society. 2004, pp 328-340, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Characterization of silicon nitride films for the thin film transistor gate dielectricSAAD ABBASI, M; HOSSAIN, Maruf; ABU-SAFE, Husam et al.Proceedings - Electrochemical Society. 2004, pp 222-229, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Effects of impurities in hafnium dioxideXIA, B; STESMANS, A; CHEN, F et al.Proceedings - Electrochemical Society. 2004, pp 304-312, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Structure and dynamics of SI interstitials at SI(001) and SI(001)/SIO2KIRICHENKO, Taras A; YU, Decai; BANERJEE, Sanjay K et al.Proceedings - Electrochemical Society. 2004, pp 112-119, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Device and substrate design for sub-10 nm MOSFETsIEONG, Meikei; DORIS, Bruce; KEDZIERSKI, Jakub et al.Proceedings - Electrochemical Society. 2004, pp 371-382, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Optimization of pre-amorphization and dopant implant conditions for advanced annealingFELCH, S. B; GRAOUI, H; MAYUR, A et al.Proceedings - Electrochemical Society. 2004, pp 31-38, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Laser anneal technology for poly-silicon dopant activation enhancementMA, Y; AHMED, K. Z; MUTHUKRISHNAN, S et al.Proceedings - Electrochemical Society. 2004, pp 230-235, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Fully silicided metal gates for high performance CMOs technologyMASZARA, W. P.Proceedings - Electrochemical Society. 2004, pp 341-353, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Radiative properties of silicon considering surface imperfections and chamber effectsZHANG, Z. M; LEE, H. J.Proceedings - Electrochemical Society. 2004, pp 19-30, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Significant improvement in device performance of advanced dynamic random access memory by hot wall-based single wafer rapid thermal annealingSETOKUBO, Tsuyoshi; NAKANO, Eiji; AIZAWA, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 135-144, issn 0161-6374, isbn 1-56677-406-3, 10 p.Conference Paper

Solid phase epitaxy: Activation and deactivation of boron in ultra-shallow junctionsLERCH, W; PAUL, S; NIESS, J et al.Proceedings - Electrochemical Society. 2004, pp 90-105, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper

Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOs deviceLEE, K. L; CARDONE, F; SAUNDERS, P et al.Proceedings - Electrochemical Society. 2004, pp 71-81, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Hafnium titanate as a high-K gate insulatorCHEN, F; LI, M; AFANASEV, V et al.Proceedings - Electrochemical Society. 2004, pp 278-285, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Challenges in integration of metal gate high-K dielectrics gate stacksTSAI, W; RAGNARSSON, L-A; SCHRAM, T et al.Proceedings - Electrochemical Society. 2004, pp 321-327, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Low thermal budget germanium MOS technologyCHI ON CHUI; SARASWAT, Krishna C.Proceedings - Electrochemical Society. 2004, pp 396-405, issn 0161-6374, isbn 1-56677-406-3, 10 p.Conference Paper

Nickel SALICIDE technology for sub-100nm CMOS devicesLU, J. P; MILES, D. S; MERCER, D et al.Proceedings - Electrochemical Society. 2004, pp 159-173, issn 0161-6374, isbn 1-56677-406-3, 15 p.Conference Paper

Recent progress in gate dielectric scalingHIGASHI, G. S; KRAUS, P; TEVATIA, G et al.Proceedings - Electrochemical Society. 2004, pp 271-277, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Strained germanium MOSFETs: Devices and process technologyRITENOUR, A; LEE, M. L; LU, N et al.Proceedings - Electrochemical Society. 2004, pp 406-411, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

TiCl4 as a precursor in the TiN deposition by ALD and PEALDELERS, Kai-Erik; WINKLER, Jerry; MARCUS, Steven et al.Proceedings - Electrochemical Society. 2004, pp 361-368, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

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