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Results 1 to 25 of 16274

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111 kW (0.5 mJ) pulse amplification at 1.5 μm using a gated cascade of three erbium-doped fiber amplifiersDESTHIEUX, B; LAMING, R. I; PAYNE, D. N et al.Applied physics letters. 1993, Vol 63, Num 5, pp 586-588, issn 0003-6951Article

A high resolution Si position sensorSCOTT, K. A. M; SHARMA, A. K; WILSON, C. M et al.Applied physics letters. 1993, Vol 62, Num 24, pp 3141-3143, issn 0003-6951Article

Absolute copper atom density determination in laser-ablated copper plasmas using hook spectroscopySAPPEY, A. D; GAMBLE, T. K; ZERKLE, D. K et al.Applied physics letters. 1993, Vol 62, Num 6, pp 564-566, issn 0003-6951Article

Adhesion studies of Cu-Cr alloys on Al2O3CHIN-JONG CHAN; CHIN-AN CHANG; FARRELL, C. E et al.Applied physics letters. 1993, Vol 62, Num 6, pp 654-656, issn 0003-6951Article

Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructuresKATSURA, S; SUGIYAMA, Y; ODA, O et al.Applied physics letters. 1993, Vol 62, Num 16, pp 1910-1912, issn 0003-6951Article

Al2O3+x/Al interface formation by promoted oxidation using an alkali metal and removal of the catalystHUTTEL, Y; BOURDIE, E; SOUKIASSIAN, P et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2437-2439, issn 0003-6951Article

AlxGa1-xAs/AlyGa1-yAs and GaAs pseudo-heterojunction bipolar transistors with lateral emitter resistorGAO, G. B; FAN, Z. F; TERAGUCHI, N et al.Applied physics letters. 1993, Vol 62, Num 9, pp 994-996, issn 0003-6951Article

Ambient scanning tunneling spectroscopy of n- and p-type gallium arsenideDAGATA, J. A; TSENG, W.Applied physics letters. 1993, Vol 62, Num 6, pp 591-593, issn 0003-6951Article

Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxyJONG BOONG LEE; IN KIM; HO KI KWON et al.Applied physics letters. 1993, Vol 62, Num 14, pp 1620-1622, issn 0003-6951Article

Anomalous doping behavior of in situ boron-doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor depositionHORNG-CHIH LIN; HSIAO-YI LIN; CHUN-YEN CHANG et al.Applied physics letters. 1993, Vol 63, Num 11, pp 1525-1527, issn 0003-6951Article

Atomic layer epitaxy of GaAs with a 2 μm/h growth rateDIP, A; ELDALLAL, G. M; COLTER, P. C et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2378-2380, issn 0003-6951Article

Atomic-scale view of AlGaAs/GaAs heterostructures with cross-sectional scanning tunneling microscopyJOHNSON, M. B; MAIER, U; MEIER, H.-P et al.Applied physics letters. 1993, Vol 63, Num 9, pp 1273-1275, issn 0003-6951Article

Atomistic calculation of the self-interstitial diffusivity in siliconMAROUDAS, D; BROWN, R. A.Applied physics letters. 1993, Vol 62, Num 2, pp 172-174, issn 0003-6951Article

Average energy deposited per atom : a universal parameter for describing ion-assisted film growth ?PETROV, I; ADIBI, F; GREENE, J. E et al.Applied physics letters. 1993, Vol 63, Num 1, pp 36-38, issn 0003-6951Article

Band-edge refractive optical nonlinearities in moleculer beam-grown ZnSe epilayersBOLGER, J. A; GALBRAITH, I; KAR, A. K et al.Applied physics letters. 1993, Vol 63, Num 6, pp 709-711, issn 0003-6951Article

Band-gap narrowing determination by photoluminescence on strained B-doped Si0.82Ge0.18 layers grown on SiSOUIFI, A; BREMOND, G; BENYATTOU, T et al.Applied physics letters. 1993, Vol 62, Num 23, pp 2986-2988, issn 0003-6951Article

Below band-gap laser ablation of diamond for transmission electron microscopyGEORGE, T; FOOTE, M. C; VASQUEZ, R. P et al.Applied physics letters. 1993, Vol 62, Num 22, pp 2880-2882, issn 0003-6951Article

Biexciton lasing in CuCl quantum dotsMASUMOTO, Y; KAWAMURA, T; ERA, K et al.Applied physics letters. 1993, Vol 62, Num 3, pp 225-227, issn 0003-6951Article

Brick-wall structure in polycrystalline TlBa2Ca2Cu3Ox thick films with high critical currentsMILLER, D. J; HU, J. G; HETTINGER, J. D et al.Applied physics letters. 1993, Vol 63, Num 4, pp 556-558, issn 0003-6951Article

Calcium fluoride thin films on GaAs(100) for possible metal-insulator-semiconductor applicationsCHAUDHARI, G. N; RAO, V. J.Applied physics letters. 1993, Vol 62, Num 8, pp 852-854, issn 0003-6951Article

Calculated room-temperature threshold current densities for the visible II-VI ZnCdSe/ZnSe quantum-well diode lasersAGGARWAL, R. L; ZAYHOWSKI, J. J; LAX, B et al.Applied physics letters. 1993, Vol 62, Num 23, pp 2899-2901, issn 0003-6951Article

Carrier pinning by mode fluctuations in laser diodesO'GORMAN, J; CHUANG, S. L; LEVI, A. F. J et al.Applied physics letters. 1993, Vol 62, Num 13, pp 1454-1456, issn 0003-6951Article

Carrier-dependent hydrogen migration in hydrogenated amorphous siliconSANTOS, P. V; JOHNSON, N. M.Applied physics letters. 1993, Vol 62, Num 7, pp 720-722, issn 0003-6951Article

Carrier-modulated, microwave-detected Shubnikov-de Haas oscillations in two-dimensional systemsLINKE, H; KOWALSKI, B; RAMVALL, P et al.Applied physics letters. 1993, Vol 62, Num 21, pp 2725-2727, issn 0003-6951Article

Characterization of thin films using numerical inversion of the generalized Lamb wave dispersion relationBEHREND, O; KULIK, A; GREMAUD, G et al.Applied physics letters. 1993, Vol 62, Num 22, pp 2787-2789, issn 0003-6951Article

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