A Gas Switch Triggered by a Microhollow Cathode Discharge (MHCD) Array With Lower Trigger EnergyKEFU LIU; YAQING TENG; LIUXIA LI et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 875-879, issn 0018-9383, 5 p.Article

A High-Frequency Transconductance Method for Characterization of High-κ Border Traps in III-V MOSFETsJOHANSSON, Sofia; BERG, Martin; PERSSON, Karl-Magnus et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 776-781, issn 0018-9383, 6 p.Article

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching MemoryBIN GAO; BING CHEN; FEIFEI ZHANG et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 4, pp 1379-1383, issn 0018-9383, 5 p.Article

A Preliminary Study on the Environmental Dependences of Avalanche Propagation in SiliconFISHBURN, Matthew W; CHARBON, Edoardo.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1028-1033, issn 0018-9383, 6 p.Article

A Simulation Study on Process Sensitivity of a Line Tunnel Field-Effect TransistorWALKE, Amey M; VANDENBERGHE, William G; KAO, Kuo-Hsing et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1019-1027, issn 0018-9383, 9 p.Article

A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel TransistorsKURODA, Rihito; YONEZAWA, Akihiro; TERAMOTO, Akinobu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3555-3561, issn 0018-9383, 7 p.Article

A THz Backward-Wave Oscillator Based on a Double-Grating Rectangular WaveguideLIU, Qing-Lun; WANG, Zi-Cheng; LIU, Pu-Kun et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 4, pp 1463-1468, issn 0018-9383, 6 p.Article

A Thermally Stable and High-Performance 90-nm Al₂O₃\Cu-Based 1T1R CBRAM CellBELMONTE, Attilio; WOOSIK KIM; BOON TEIK CHAN et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3690-3695, issn 0018-9383, 6 p.Article

AlGaN Channel HEMT With Extremely High Breakdown VoltageNANJO, Takuma; IMAI, Akifumi; SUZUKI, Yosuke et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1046-1053, issn 0018-9383, 8 p.Article

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz : GaN ELECTRONIC DEVICESTIRELLI, Stefano; LUGANI, Lorenzo; MARTI, Diego et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3091-3098, issn 0018-9383, 8 p.Article

An Accurate and Robust Compact Model for High-Voltage MOS IC Simulation : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSWENYUAN WANG; TUDOR, Bogdan; XUEMEI XI et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 662-669, issn 0018-9383, 8 p.Article

Analysis of Charge-Pumping Data for Identification of Dielectric DefectsVEKSLER, Dmitry; BERSUKER, Gennadi; KOUDYMOV, Alexey et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 5, pp 1514-1522, issn 0018-9383, 9 p.Article

Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film TransistorsMINKYUNG BAE; KYUNG MIN LEE; CHO, Eou-Sik et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3465-3473, issn 0018-9383, 9 p.Article

Analytical Modeling of IGBTs: Challenges and Solutions : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSBALIGA, B. J.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 535-543, issn 0018-9383, 9 p.Article

Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs With Localized ChargesWOO, Jong-Ho; CHOI, Ji-Min; CHOI, Yang-Kyu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 9, pp 2951-2955, issn 0018-9383, 5 p.Article

Application of MgCaO Cathode Layer to Plasma Display Panel for High Luminous EfficacyLEE, Tae-Ho; CHEONG, Hee-Woon; KWON, Ohyung et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 301-304, issn 0018-9383, 4 p.Article

Atomically Flat Low-Resistive Germanide Contacts Formed by Laser Thermal AnnealSHAYESTEH, Maryam; HUET, Karim; PETKOV, Nikolay et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2178-2185, issn 0018-9383, 8 p.Article

Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene NanoribbonsKARAMITAHERI, Hossein; POURFATH, Mahdi; FAEZ, Rahim et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2142-2147, issn 0018-9383, 6 p.Article

Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOXYUNXIANG YANG; MARKOV, Stanislav; BINJIE CHENG et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 739-745, issn 0018-9383, 7 p.Article

Bipolar Poisson Solution for Independent Double-Gate MOSFETABRAHAM, Aby; PANKAJ KUMAR THAKUR; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 498-501, issn 0018-9383, 4 p.Article

CPW Tunable Band-Stop Filter Using Hybrid Resonator and Employing RF MEMS CapacitorsNAIBO ZHANG; ZHONGLIANG DENG; FAN SEN et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2648-2655, issn 0018-9383, 8 p.Article

Characterization of Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar OrbiterMOUSSA, Ali Ben; GIORDANENGO, Boris; LAUBIS, Christian et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 5, pp 1701-1708, issn 0018-9383, 8 p.Article

Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-ParametersZARATE-RINCON, Fabián; ALVAREZ-BOTERO, Germán A; TORRES-TORRES, Reydezel et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2450-2456, issn 0018-9383, 7 p.Article

Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect TransistorsHYUN KIM, Chang; BONNASSIEUX, Yvan; HOROWITZ, Gilles et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 280-287, issn 0018-9383, 8 p.Article

Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTsYIGLETU, Fetene Mulugeta; KHANDELWAL, Sourabh; FJELDLY, Tor A et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3746-3752, issn 0018-9383, 7 p.Article