Descriptor-based methodology for statistical characterization and 3D reconstruction of microstructural materialsHONGYI XU; DIKIN, Dmitriy A; BURKHART, Craig et al.Computational materials science. 2014, Vol 85, pp 206-216, issn 0927-0256, 11 p.Article

Pinning force from multiple second-phase particles in grain growthNAN WANG; YOUHAI WEN; CHEN, Long-Qing et al.Computational materials science. 2014, Vol 93, pp 81-85, issn 0927-0256, 5 p.Article

Concepts for simuiating and understanding materials at the atomic scale : THREE DECADES OF MANY-BODY POTENTIALS IN MATERIALS RESEARCHFINNIS, M. W.MRS bulletin. 2012, Vol 37, Num 5, pp 477-484, issn 0883-7694, 8 p.Article

Cerium-Reduction-Induced Defects Clustering, Ordering, and Associated Microstructure Evolution in Yttrium-Doped CeriaLI, Zhi-Peng; MORI, Toshiyuki; FEI YE et al.Journal of physical chemistry. C. 2012, Vol 116, Num 9, pp 5435-5443, issn 1932-7447, 9 p.Article

Expanded Solubility and Densification Behavior of Li-Ga Co-Doped ZnODAE YOON KIM; LEE, Joon-Hyung; HEO, Young-Woo et al.Journal of nanoelectronics and optoelectronics. 2012, Vol 7, Num 5, pp 575-579, issn 1555-130X, 5 p.Article

On the stability of a microstructure modelBEREZOVSKI, Mihhail; BEREZOVSKI, Arkadi.Computational materials science. 2012, Vol 52, Num 1, pp 193-196, issn 0927-0256, 4 p.Conference Paper

Dislocations accelerating through the shear-wave speed barrier and effect of the acceleration on the Mach front curvatureSURONG HUANG; MARKENSCOFF, Xanthippi.International journal of engineering science. 2011, Vol 49, Num 12, pp 1461-1469, issn 0020-7225, 9 p.Article

Solidity is an imperfect stateQUEISSER, Hans J.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 256-258, issn 0022-3697, 3 p.Conference Paper

Regularity of the eikonal equation with Neumann boundary conditions in the plane : Application to fronts with nonlocal termsCARDALIAGUET, Pierre; MARCHI, Claudio.SIAM journal on control and optimization. 2007, Vol 45, Num 3, pp 1017-1038, issn 0363-0129, 22 p.Article

The mechanics and physics of defect nucleationJU LI.MRS bulletin. 2007, Vol 32, Num 2, pp 151-159, issn 0883-7694, 9 p.Article

A novel implementation for the simulation of 2-D grain growth with consideration to external energetic fieldsBARRALES-MORA, L. A; MOHLES, V; KONIJNENBERG, P. J et al.Computational materials science. 2007, Vol 39, Num 1, pp 160-165, issn 0927-0256, 6 p.Conference Paper

Radio-frequency pulse traces in resonant oscillation spectrum of metallic powdersTSURUOKA, F.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2006, Vol 442, Num 1-2, pp 523-526, issn 0921-5093, 4 p.Conference Paper

Unusual morphological features of natural diamond samples characterized with Micro Raman SpectroscopySACHDEV, Hermann; KRAMLICH, Erwin.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 12, pp 3094-3099, issn 1862-6300, 6 p.Conference Paper

Impurity locking of dislocations in siliconGIANNATTASIO, A; MURPHY, J. D; SENKADER, S et al.Proceedings - Electrochemical Society. 2004, pp 39-54, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

Defects properties in plastically deformed silicon studied by positron lifetime measurementsWANG, Z; LEIPNER, H. S; KRAUSE-REHBERG, R et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 358-366, issn 0167-9317, 9 p.Conference Paper

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaNRAGHOTHAMACHAR, Balaji; VETTER, William M; DUDLEY, Michael et al.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 271-280, issn 0022-0248, 10 p.Conference Paper

On the microscopic structure of the EL6 defect in GaAsSTEINEGGER, Th; GRÜNDIG-WENDROCK, B; JURISCH, M et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 745-748, issn 0921-4526Conference Paper

The fascinating dynamics of defects in siliconESTREICHER, S. K; FEDDERS, P. A; ORDEJON, P et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 1-7, issn 0921-4526Conference Paper

Spectroscopic studies of dynamically compacted monoclinic ZrO₂MACZKA, M; LUTZ, E. T. G; VERBEEK, H. J et al.The Journal of physics and chemistry of solids. 1999, Vol 60, Num 12, pp 1909-1914, issn 0022-3697Article

Electron beam induced current investigations of transition metal impurities at extended defects in siliconWILSHAW, P. R; FELL, T. S.Journal of the Electrochemical Society. 1995, Vol 142, Num 12, pp 4298-4304, issn 0013-4651Article

Ab initio investigation of carbon-related defects in siliconDAL PINO, A. JR; RAPPE, A. M; JOANNOPOULOS, J. D et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 19, pp 12554-12557, issn 0163-1829Article

Atomistic computer simulations of yttrium iron garnet (YIG) as an approach to materials defect chemistry. I: Intrinsic defectsDONNERBERG, H; CATLOW, C. R. A.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 18, pp 2947-2960, issn 0953-8984Article

Diffusion of point defects in silicon crystals during melt-growth. II: One diffusor modelHABU, R; KOJIMA, K; HARADA, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 4, pp 1747-1753, issn 0021-4922, 1Article

Etch pits originating from precipitates in CdTe and Cd_1-xZn_xTe growth by the vertical Bridgman-Stockbarger methodSHEN, J; AIDUN, D. K; REGEL, L. L et al.Journal of crystal growth. 1993, Vol 132, Num 1-2, pp 351-356, issn 0022-0248Article

Growth kinetics of disk-shaped extended defects with constant thicknessDUNHAM, S. T.Applied physics letters. 1993, Vol 63, Num 4, pp 464-466, issn 0003-6951Article