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Annealing of hydrogen-induced defects in RF-plasma-treated Si wafers: ex situ and in situ transmission electron microscopy studiesGHICA, C; NISTOR, L. C; VIZIREANU, S et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 29, issn 0022-3727, 295401.1-295401.8Article

X-ray diffraction characterization of microdefects in silicon crystals after high-energy electron irradiation : High-resolution X-ray Diffraction and ImagingMOLODKIN, V. B; OLIKHOVSKII, S. I; FODCHUK, I. M et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 11, pp 2552-2557, issn 1862-6300, 6 p.Article

Elliptical micropipes in SiC revealed by computer simulating phase contrast imagesARGUNOVA, Tatiana; KOHN, Victor; JUNG, Ji-Won et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 8, pp 1833-1837, issn 1862-6300, 5 p.Conference Paper

Behavior of cold-worked AISI-304 steel in stress-corrosion cracking process: Microstructural aspectsZEMAN, A; NOVOTNY, R; UCA, O et al.Applied surface science. 2008, Vol 255, Num 1, pp 160-163, issn 0169-4332, 4 p.Article

Identification of intrinsic defects in SiC : Towards an understanding of defect aggregates by combining theoretical and experimental approachesBOCKSTEDTE, Michel; GALI, Adam; MATTAUSCH, Alexander et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1281-1297, issn 0370-1972, 17 p.Article

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Atomic structure of pre-Guinier-Preston zones in al alloysSTAAB, T. E. M; HAAKS, M; ZAMPONI, C et al.Physica status solidi. Rapid research letters (Print). 2007, Vol 1, Num 5, pp 172-174, issn 1862-6254, 3 p.Article

Defect structure of silicon crystals implanted with H+2 ionsSHALIMOV, Artem; SHCHERBACHEV, Kirill D; BAK-MISIUK, Jadwiga et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 8, pp 2638-2644, issn 1862-6300, 7 p.Conference Paper

Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methodsMCHEDLIDZE, T; ARGUIROV, T; JIA, G et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 7, pp 2229-2237, issn 1862-6300, 9 p.Conference Paper

HRTEM and EELS studies on structural defects in the superconductor Sr₂CuO_2+δCl_2-y newly synthesized under high pressureYANG, H; LIU, Q. Q; LI, F. Y et al.Journal of superconductivity and novel magnetism. 2006, Vol 19, Num 1-2, pp 129-133, issn 1557-1939, 5 p.Article

Defect structure of the high-dielectric-constant perovskite CaCu₃Ti₄O₁₂WU, L; ZHU, Y; PARK, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 1, pp 014118.1-014118.7, issn 1098-0121Article

Defect structure of Ga_1-xMn_xAs: A cross-sectional scanning tunneling microscopy studyMIKKELSEN, A; SANYAL, B; SADOWSKI, J et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 8, pp 085411.1-085411.5, issn 1098-0121Article

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Defect production in ion-implanted yttria-stabilized zirconia investigated by positron depth profilingSAUDE, S; GRYNSZPAN, R. I; ANWAND, W et al.Journal of alloys and compounds. 2004, Vol 382, pp 252-256, issn 0925-8388, 5 p.Conference Paper

X-ray topography study of LiB3O5 crystals grown from molybdate fluxVASILENKO, A. P; KOLESNIKOV, A. V; TRUKHANOV, E. M et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 40, pp 6801-6808, issn 0953-8984, 8 p.Article

Direct measurement of twist mosaic in epitaxial GaNLAFFORD, T. A; RYAN, P. A; JOYCE, D. E et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 265-270, issn 0031-8965, 6 p.Conference Paper

The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopyCHTCHERBATCHEV, K. D; BUBLIK, V. T; MARKEVICH, A. S et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 10A, pp A143-A147, issn 0022-3727Conference Paper

Orthorhombic microdefects in Si crystalsBOROWSKI, J; NIETUBYC, R; AULEYTNER, J et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 10, pp 1540-1542, issn 0022-3727Article

Planar faults in layered Bi-containing perovskites studied by X-ray diffraction line profile analysisBOULLE, A; LEGRAND, C; GUINEBRETIERE, R et al.Journal of applied crystallography. 2001, Vol 34, pp 699-703, issn 0021-8898, 6Article

Calculation of diffraction line profiles from specimens with dislocations. A comparison of analytical models with computer simulationsKAMMINGA, J.-D; DELHEZ, R.Journal of applied crystallography. 2000, Vol 33, pp 1122-1127, issn 0021-8898, 4Article

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Oxygen vacancy ordering in La_2-xSr_xNiO_4-δ(0 ≤ x ≤ 0.5) : the crystal structure and defects investigated by neutron diffractionMEDARDE, M; RODRIGUEZ-CARVAJAL, J.Zeitschrift für Physik. B, Condensed matter. 1997, Vol 102, Num 3, pp 307-315, issn 0722-3277Article

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopyCHERNS, D; YOUNG, W. T; PONCE, F. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1997, Vol 50, Num 1-3, pp 76-81, issn 0921-5107Conference Paper

Diffuse scattering by microdefects in siliconZOTOV, N. M; BUBLIK, V. T.Inorganic materials. 1996, Vol 32, Num 7, pp 692-695, issn 0020-1685Article