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Results 1 to 25 of 1355

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Hydrogen accommodation in α-iron and nickelFULLARTON, M. L; VOSKOBOINIKOV, R. E; MIDDLEBURGH, S. C et al.Journal of alloys and compounds. 2014, Vol 587, pp 794-799, issn 0925-8388, 6 p.Article

Influence of pulling rate on multicrystalline silicon ingots' propertiesAUTRUFFE, Antoine; SØNDENA, Rune; VINES, Lasse et al.Journal of crystal growth. 2014, Vol 386, pp 199-203, issn 0022-0248, 5 p.Article

Integrated analysis and design optimization of germanium purification process using zone-refining techniqueSEN WANG; FANG, H. S; JIN, Z. L et al.Journal of crystal growth. 2014, Vol 408, pp 42-48, issn 0022-0248, 7 p.Article

Effect of tin addition on primary silicon recovery in Si―Al melt during solidification refining of siliconJIAYAN LI; YAO LIU; YI TAN et al.Journal of crystal growth. 2013, Vol 371, pp 1-6, issn 0022-0248, 6 p.Article

Material Diffusion and Doping of Mn in Wurtzite ZnSe NanorodsACHARYA, Shinjita; SARKAR, Suresh; PRADHAN, Narayan et al.Journal of physical chemistry. C. 2013, Vol 117, Num 11, pp 6006-6012, issn 1932-7447, 7 p.Article

Microscopic distribution of metal dopants and anion vacancies in Fe-doped BaTiO3―δ single crystalsCHAKRABORTY, Tanushree; MENEGHINI, Carlo; AQUILANTI, Giuliana et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 23, issn 0953-8984, 236002.1-236002.7Article

Ab initio study of the interaction of H with substitutional solute atoms in α-Fe: Trends across the transition-metal seriesPSIACHOS, D; HAMMERSCHMIDT, T; DRAUTZ, R et al.Computational materials science. 2012, Vol 65, pp 235-238, issn 0927-0256, 4 p.Article

Atomistic simulation of Mn-site substitution in multiferroic h-YMnO3NING JIANG; ZHANG, X.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 23, issn 0953-8984, 235402.1-235402.5Article

Helium induced void and bubble formation in MgORUNEVALL, Odd; SANDBERG, Nils.Computational materials science. 2012, Vol 60, pp 53-58, issn 0927-0256, 6 p.Article

Co-doping of (Bi0.5Na0.5)TiO3: secondary phase formation and lattice site preference of CoSCHMITT, V; STAAB, T. E. M.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 45, issn 0953-8984, 455901.1-455901.7Article

Enhanced visible-light absorption and dopant distribution of iodine-Ti02 nanoparticles synthesized by a new facile two-step hydrothermal methodXIAOTING HONG; ZHIPING LUO; BATTEAS, James D et al.Journal of solid state chemistry (Print). 2011, Vol 184, Num 8, pp 2244-2249, issn 0022-4596, 6 p.Article

Iron doping of lithium niobate by thermal diffusion from thin film: study of the treatment effectCIAMPOLILLO, Maria Vittoria; ZALTRON, Annamaria; BAZZAN, Marco et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 104, Num 1, pp 453-460, issn 0947-8396, 8 p.Article

Lattice location of nickel in diamond by RBS channelling and PIXEDRUMM, Virginia S; ALVES, Andrew D. C; ORWA, Julius O et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 42-46, issn 1862-6300, 5 p.Article

Probing the erbium ion distribution in silica optical fibers with fluorescence based measurementsSIDIROGLOU, F; ROBERTS, A; BAXTER, G. W et al.Journal of non-crystalline solids. 2011, Vol 357, Num 22-23, pp 3847-3852, issn 0022-3093, 6 p.Article

Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductorsD'ACAPITO, Francesco.Semiconductor science and technology. 2011, Vol 26, Num 6, issn 0268-1242, 064004.1-064004.8Article

Effect of substitutional Mo on diffusion and site occupation of hydrogen in the BCT monohydride phase of V-H system studied by 1H NMRASANO, Kohta; HAYASHI, Shigenobu; NAKAMURA, Yumiko et al.Journal of alloys and compounds. 2010, Vol 507, Num 2, pp 399-404, issn 0925-8388, 6 p.Article

Helium cluster dissolution in molybdenumRUNEVALL, O; SANDBERG, N.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 33, issn 0953-8984, 335401.1-335401.6Article

Diffusion Al from implanted SiC layerALEKSANDROV, O. V; KALININA, E. V.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4764-4767, issn 0921-4526, 4 p.Conference Paper

Effect of temperature and TiN addition on the characteristics of Al-Ag alloyNADA, R. H.EPJ. Applied physics (Print). 2008, Vol 44, Num 2, pp 187-191, issn 1286-0042, 5 p.Article

Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport methodFANTON, M. A; LI, Q; POLYAKOV, A. Y et al.Journal of crystal growth. 2007, Vol 300, Num 2, pp 314-318, issn 0022-0248, 5 p.Article

Defect structure of Sb2-xFexTe3 single crystalsHORHK, J; LOST'AK, P; DRALAR, C et al.Journal of solid state chemistry (Print). 2007, Vol 180, Num 3, pp 915-921, issn 0022-4596, 7 p.Article

Semiconductor properties of Cu-based delafossites revealed by an electric field gradient studyLALIE, M. V; MESTNIK-FILHO, J.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 5, pp 1619-1628, issn 0953-8984, 10 p.Article

Epifluorescence optical microscopy : a sensitive tool for determining the spatial distribution of europium-dihalide precipitates in KCl:KBr:Eu2+ crystalsCORDERO-BORBOA, A. E; JIMENEZ-GARCIA, L. F.Philosophical magazine letters. 2005, Vol 85, Num 7, pp 345-357, issn 0950-0839, 13 p.Article

Effect of oxidation treatments on the redistribution of the boron in the thin films of polycrystalline silicon Si-LPCVD used in VLSIAÏT-KAKI, A; RECHEM, D.EPJ. Applied physics (Print). 2004, Vol 25, Num 2, pp 77-84, issn 1286-0042, 8 p.Article

Characterization of electrically active dopant profiles with the spreading resistance probeCLARYSSE, T; VANHAEREN, D; HOFLIJK, I et al.Materials science & engineering. R, Reports. 2004, Vol 47, Num 5-6, pp 123-206, issn 0927-796X, 84 p.Article

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