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Nanostructures on GaAs surfaces due to 60 keV Ar⁺-ion beam sputteringVENUGOPAL, V; KUMAR GARG, Sandeep; BASU, Tanmoy et al.Applied surface science. 2012, Vol 258, Num 9, pp 4144-4147, issn 0169-4332, 4 p.Article

Chemical nature of N-ions incorporated into epitaxial ZnO films : Semiconductor Surfaces and Interfaces in Materials ScienceHOFFMANN, Patrick; PETTENKOFER, Christian.Physica status solidi. B. Basic research. 2011, Vol 248, Num 2, pp 327-333, issn 0370-1972, 7 p.Article

Heavily Doped Semiconductor Nanocrystal Quantum DotsMOCATTA, David; COHEN, Guy; SCHATTNER, Jonathan et al.Science (Washington, D.C.). 2011, Vol 332, Num 6025, pp 77-81, issn 0036-8075, 5 p.Article

Synchrotron fluorescence nanoimaging of a single Co-implanted ZnO nanowireCHU, M. H; SEGURA-RUIZ, J; MARTINEZ-CRIADO, G et al.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 8, pp 283-285, issn 1862-6254, 3 p.Article

The transparence comparison of Ga- and Al-doped ZnO thin filmsLI, Zheng-Zheng; CHEN, Zhi-Zhan; WEI HUANG et al.Applied surface science. 2011, Vol 257, Num 20, pp 8486-8489, issn 0169-4332, 4 p.Article

Tuning doping site and type by strain: Enhanced p-type doping in Li doped ZnOJUNYI ZHU; WEI, Su-Huai.Solid state communications. 2011, Vol 151, Num 20, pp 1437-1439, issn 0038-1098, 3 p.Article

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm₂O₃MUNOZ, E. L; DARRIBA, G. N; BIBILONI, A. G et al.Journal of alloys and compounds. 2010, Vol 495, Num 2, pp 532-536, issn 0925-8388, 5 p.Conference Paper

Luminescence properties of Tb implanted ZnOCETIN, A; KIBAR, R; SELVI, S et al.Physica. B, Condensed matter. 2009, Vol 404, Num 20, pp 3379-3385, issn 0921-4526, 7 p.Article

Solubility of co-doped Cu ions in Zn_0.95CO_0.05O diluted magnetic semiconductorsFENGCHUN HU; ZHIYUN PAN; TAO YAO et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 12, issn 0022-3727, 125408.1-125408.6Article

Lattice location of the group V elements As and Sb in ZnOWAHL, U; CORREIA, J. G; DECOSTER, S et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4803-4806, issn 0921-4526, 4 p.Conference Paper

Nitrogen and hydrogen in bulk single-crystal ZnOJOKELA, S. J; TARUN, M. C; MCCLUSKEY, M. D et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4810-4812, issn 0921-4526, 3 p.Conference Paper

Trivalent dopants on ZnO semiconductor obtained by mechanical millingDAMONTE, L. C; DONDERIS, V; HERNANDEZ-FENOLLOSA, M. A et al.Journal of alloys and compounds. 2009, Vol 483, Num 1-2, pp 442-444, issn 0925-8388, 3 p.Conference Paper

Unintentional doping in GaN assessed by scanning capacitance microscopySUMNER, J; DAS BAKSHI, S; OLIVER, R. A et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 5, pp 896-898, issn 0370-1972, 3 p.Conference Paper

Raman and X-ray absorption near-edge structure characterization of GaN implanted with O, Ar, Xe, Te and AuKATSIKINI, M; ARVANITIDIS, J; PALOURA, E. C et al.Optical materials (Amsterdam). 2007, Vol 29, Num 12, pp 1856-1860, issn 0925-3467, 5 p.Article

Synthesis of GaN phase by ion implantationBARANWA, Vikas; KRISHNA, Richa; SINGH, Fouran et al.Applied surface science. 2007, Vol 253, Num 12, pp 5317-5319, issn 0169-4332, 3 p.Article

Sb-treatment effect of GaAs substrate on Sb-doped Cd_1-xMn_xTe growth by MOVPEGOTO, Hideo; TAHASHI, Masahiro; IDO, Toshiyuki et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 5, pp 1691-1693, issn 0370-1972, 3 p.Conference Paper

Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopyTANAKA, Tooru; MURATA, Norihiro; SAITO, Katsuhiko et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 5, pp 1685-1690, issn 0370-1972, 6 p.Conference Paper

Defect reactions in gallium antimonide studied by zinc and self-diffusionSUNDER, Kirsten; BRACHT, Hartmut.Physica. B, Condensed matter. 2007, Vol 401-02, pp 262-265, issn 0921-4526, 4 p.Conference Paper

Stability of the cubic phase in GaN doped with 3d-transition metal ionsCHOI, Eun-Ae; CHANG, K. J.Physica. B, Condensed matter. 2007, Vol 401-02, pp 319-322, issn 0921-4526, 4 p.Conference Paper

Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substratesKUMAGAI, Yoshinao; SATOH, Fumitaka; TOGASHI, Rie et al.Journal of crystal growth. 2006, Vol 296, Num 1, pp 11-14, issn 0022-0248, 4 p.Article

Growth and properties of CdTe:Bi-doped crystalsSAUCEDO, E; MARTINEZ, O; RUIZ, C. M et al.Journal of crystal growth. 2006, Vol 291, Num 2, pp 416-423, issn 0022-0248, 8 p.Article

Optical and transport properties of chromium-doped CdSe and CdS_0.67Se_0.33 crystalsKASIYAN, V; DASHEVSKY, Z; SHNECK, R et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 50-55, issn 0022-0248, 6 p.Article

The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin filmsVENKATACHALAM, S; MANGALARAJ, D; NARAYANDASS, Sa. K et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1661-1667, issn 0268-1242, 7 p.Article

Preferential substitution of Fe on physically equivalent Ga sites in GaNGEHLHOFF, W; AZAMAT, D; HABOECK, U et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 486-490, issn 0921-4526, 5 p.Conference Paper