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Susceptor-assisted microwave annealing for activation of arsenic dopants in siliconALFORD, T. L; GADRE, Mandar J; VEMURI, Rajitha N. P et al.Thin solid films. 2012, Vol 520, Num 13, pp 4314-4320, issn 0040-6090, 7 p.Article

Ab initio study of stability and migration of H and He in hcp-ScYANG, L; PENG, S. M; LONG, X. G et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 3, issn 0953-8984, 035701.1-035701.9Article

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First-principles modeling of the interactions of iron impurities with graphene and graphiteBOUKHVALOV, Danil W.Physica status solidi. B. Basic research. 2011, Vol 248, Num 6, pp 1347-1351, issn 0370-1972, 5 p.Article

Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm2/V s at 300 K for ion-implanted diamondRATNIKOVA, A. K; DUKHNOVSKY, M. P; FEDOROV, Yu. Yu et al.Diamond and related materials. 2011, Vol 20, Num 8, pp 1243-1245, issn 0925-9635, 3 p.Article

New intrinsic oxygen related defect bands in oxygen implanted silicaMAGRUDER, R. H; WEEKS, R. A; WELLER, R. A et al.Journal of non-crystalline solids. 2011, Vol 357, Num 7, pp 1615-1620, issn 0022-3093, 6 p.Article

Characterization of damage structure in ion implanted SiC using high photon energy synchrotron ellipsometryPETRIK, P; ZOLNAI, Z; POLGAR, O et al.Thin solid films. 2011, Vol 519, Num 9, pp 2791-2794, issn 0040-6090, 4 p.Conference Paper

Activation behavior of boron implanted poly-Si on glass substrateFURUTA, M; SHIMAMURA, K; TSUBOKAWA, H et al.Thin solid films. 2010, Vol 518, Num 15, pp 4477-4481, issn 0040-6090, 5 p.Article

Formation of cBN nanocrystals by He⁺ implantation into hBNMACHAKA, Ronald; ERASMUS, Rudolph M; DERRY, Trevor E et al.Diamond and related materials. 2010, Vol 19, Num 10, pp 1131-1134, issn 0925-9635, 4 p.Article

Growth of nanoparticles in hydrogen-implanted palladium subsurfacesOKUYAMA, F.Applied physics. A, Materials science & processing (Print). 2010, Vol 100, Num 1, pp 245-248, issn 0947-8396, 4 p.Article

Carbon redistribution in nanometric Si_1―xC_x layers upon ion beam synthesis of SiC by C implantation into SIMOX(111)DOS REIS, R. M. S; MALTEZ, R. L; BOUDINOV, H et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 39, issn 0022-3727, 395401.1-395401.8Article

Controlled variation of the refractive index in ion-damaged diamondOLIVERO, P; CALUSI, S; GIUNTINI, L et al.Diamond and related materials. 2010, Vol 19, Num 5-6, pp 428-431, issn 0925-9635, 4 p.Conference Paper

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Improving purity and size of single-crystal diamond plates produced by high-rate CVD growth and lift-off process using ion implantationMOKUNO, Y; CHAYAHARA, A; YAMADA, H et al.Diamond and related materials. 2009, Vol 18, Num 10, pp 1258-1261, issn 0925-9635, 4 p.Article

Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B⁺ and P⁺₂ implantation dopingKATSIDIS, C. C; SIAPKAS, D. I.Thin solid films. 2009, Vol 517, Num 15, pp 4307-4317, issn 0040-6090, 11 p.Article

XAFS studies of nickel-doped lead tellurideRADISAVLJEVIC, Ivana; NOVAKOVIC, Nikola; IVANOVIC, Nenad et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5032-5034, issn 0921-4526, 3 p.Conference Paper

Dynamics of implanted muons at low temperatures in white tinSOLT, G; ZIMMERMANN, U; HERLACH, D et al.Physica. B, Condensed matter. 2008, Vol 403, Num 19-20, pp 3351-3353, issn 0921-4526, 3 p.Article

Interaction between helium and vacancy in plutonium by embedded atom methodBINGYUN AO; XIAOLIN WANG; WANGYU HU et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 8, pp 1493-1497, issn 0370-1972, 5 p.Article

N-type diamond produced by MeV lithium implantation in channeling directionCHERNYSHEV, V. A; MEIJER, J; GRAMBOLE, D et al.Diamond and related materials. 2008, Vol 17, Num 11, pp 1933-1935, issn 0925-9635, 3 p.Article

Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defectsVDOVIN, V. I; ZAKHAROV, N. D.Thin solid films. 2008, Vol 517, Num 1, pp 278-280, issn 0040-6090, 3 p.Conference Paper

Defect structure and photorefractive properties of In:Eu:Fe:LiNbO₃ Crystals with various Li/Nb ratiosLIANG SUN; FENGYUN GUO; QIANG LV et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 421-426, issn 0022-0248, 6 p.Article

Doping of boron carbides with cobalt, using cobaltoceneCARLSON, L; LAGRAFFE, D; BALAZ, S et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 89, Num 1, pp 195-201, issn 0947-8396, 7 p.Article