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Molecular dynamics simulation of graphene sheets joining under ion beam irradiationXIN WU; HAIYAN ZHAO; MINLIN ZHONG et al.Carbon (New York, NY). 2014, Vol 66, pp 31-38, issn 0008-6223, 8 p.Article

Swift heavy ion irradiation induced modification in structural, optical and luminescence properties of Y₂O₃:Tb³⁺ nanophosphorSOM, S; DUTTA, S; KUMAR, Vijay et al.Journal of luminescence. 2014, Vol 146, pp 162-173, issn 0022-2313, 12 p.Article

The effect of dual Fe+/He+ ion beam irradiation on microstructural changes in FeCrAl ODS alloysCHEN, C.-L; RICHTER, A; KÖGLER, R et al.Journal of alloys and compounds. 2014, Vol 586, issn 0925-8388, S173-S179, SUP1Conference Paper

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Study of ion beam synthesized nanostructured PbTe surfaceGUPTA, Srashti; AGARWAL, D. C; TRIPATHI, S. K et al.Applied surface science. 2013, Vol 265, pp 124-129, issn 0169-4332, 6 p.Article

Synthesis of periodic plasmonic microstructures with copper nanoparticles in silica glass by low-energy ion implantationSTEPANOV, A. L; GALYAUTDINOV, M. F; EVLYUKHIN, A. B et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 111, Num 1, pp 261-264, issn 0947-8396, 4 p.Article

Tl1-xIn1-xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single-crystalline alloys as promising non-linear optical materialsMYRONCHUK, G. L; DAVYDYUK, G. E; PARASYUK, O. V et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 9, pp 3555-3563, issn 0957-4522, 9 p.Article

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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°CNIPOTI, R; NATH, A; QADRI, S. B et al.Journal of electronic materials. 2012, Vol 41, Num 3, pp 457-465, issn 0361-5235, 9 p.Article

Irradiation induced changes in small angle grain boundaries in mosaic Cu thin filmsFU, E. G; WANG, Y. Q; NASTASI, M et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 108, Num 1, pp 121-126, issn 0947-8396, 6 p.Article

Morphology of swift heavy ion tracks in metallic glassesRODRIGUEZ, M. D; AFRA, B; TRAUTMANN, C et al.Journal of non-crystalline solids. 2012, Vol 358, Num 3, pp 571-576, issn 0022-3093, 6 p.Article

ANALYSE MULTIVARIEE D'UNE CARTOGRAPHIE RAMAN: ÉTUDE D'UN ECHANTILLON DE CARBURE DE SILICIUM IRRADIÉ PAR DES IONS Au⁶⁺ = Multivariate analysis of a Raman mapping: Study of an Au⁶⁺ irradiated Silicon carbideGUIMBRETIERE, Guillaume; AUBAILLY, Simon; SIMON, Patrick et al.Annales de chimie (Paris. 1914). 2012, Vol 37, Num 1, pp 21-29, issn 0151-9107, 9 p.Article

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Role of point defects on B diffusion in GeSCAPELLATO, G. G; BRUNO, E; PRIOLO, F et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 656-668, issn 1369-8001, 13 p.Article

Defects annealing in 4H―SiC epitaxial layer probed by low temperature photoluminescenceLITRICO, G; ZIMBONE, M; MUSUMECI, P et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 740-743, issn 1369-8001, 4 p.Article

Controllable three dimensional deformation of platinum nanopillars by focused-ion-beam irradiationAJUAN CUI; WUXIA LI; QIANG LUO et al.Microelectronic engineering. 2012, Vol 98, pp 409-413, issn 0167-9317, 5 p.Conference Paper

Effect of 100 MeV Ni⁹⁺ ion irradiation on MOCVD grown n-GaNSURESH KUMAR, V; KUMAR, J; PUVIARASU, P et al.Physica. B, Condensed matter. 2011, Vol 406, Num 22, pp 4210-4213, issn 0921-4526, 4 p.Article

Effect of 50 MeV Li³⁺ irradiation on structural and electrical properties of Mn-doped ZnOK NEOGI, S; CHATTOPADHYAY, S; BANERJEE, Aritra et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 20, issn 0953-8984, 205801.1-205801.7Article

Implantation of single crystalline iron garnet thin films with He⁺, B⁺, and Si⁺ ionsOSTAFIYCHUK, B. K; FEDORIV, V. D; YAREMIY, I. P et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2108-2114, issn 1862-6300, 7 p.Article

Luminescence studies on swift heavy ion irradiated nanocrystalline aluminum oxideNAGABHUSHANA, K. R; LAKSHMINARASAPPA, B. N; REVANNASIDDAIAH, D et al.Journal of luminescence. 2011, Vol 131, Num 4, pp 764-767, issn 0022-2313, 4 p.Article

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