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Initial state dependence of interface dynamics in a reaction-diffusion systemHIDA, Masaki; HONDA, Katsuya.Journal of the Physical Society of Japan. 2003, Vol 72, Num 10, pp 2690-2691, issn 0031-9015, 2 p.Article

X-ray diffraction analysis of GaAs/AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs sufacesTAGLIENTE, M. A; DE CARO, L; NÖTZEL, R et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 747-751, issn 0038-1101Conference Paper

Electron desorption study of HF etched Si(100)CRAIG, J. H; CARISS, C; CRAIG, M. J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 3, pp 554-556, issn 0734-2101Article

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Preparation of carbon nanotubes by arc-discharge evaporationANDO, Y; IIJIMA, S.Japanese journal of applied physics. 1993, Vol 32, Num 1A/B, pp L107-L109, issn 0021-4922, 2Article

Increased modulation depth of submicron gratings produced by photoelectrochemical etching of GaAsTWYFORD, E. J; KOHL, P. A; JOKERST, N. M et al.Applied physics letters. 1992, Vol 60, Num 20, pp 2528-2530, issn 0003-6951Article

Measuring the thickness of oxide on polysilicon using ultraviolet ellipsometryTOMPKINS, H. G; VASQUEZ, B; MATHIS, T et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 6, pp 1772-1777, issn 0013-4651Article

Scanning tunneling microscopy studies of diamond-like films prepared by laser ablationVASQUEZ, L; MARTIN-GAGO, J. A; BERNARD, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1992, Vol 11, Num 1-4, pp 363-367Conference Paper

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Thermal stability and degradation mechanisms of trialkylsilyl surface modification on silica powderSEVERIN, J. W; VAN DER WEL, H; CAMPS, I. G. J et al.Surface and interface analysis. 1992, Vol 19, Num 1-12, pp 133-138, issn 0142-2421Conference Paper

1/f noise for driven interfacesKRUG, J.Physical review. A. 1991, Vol 44, Num 2, pp R801-R804, issn 1050-2947Article

A transmission electron microscopy study of hillocks in thin aluminum filmsERICSON, F; KRISTENSEN, N; SCHWEITZ, J.-A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 58-63, issn 0734-211XArticle

Atom condensation on an atomically smooth surface : Ir, Re, W, and Pd on Ir(111)WANG, S. C; EHRLICH, G.The Journal of chemical physics. 1991, Vol 94, Num 5, pp 4071-4074, issn 0021-9606Article

Desorption kinetics of hydrogen from the Si(111)7×7 surfaceREIDER, G. A; HÖFER, U; HEINZ, T. F et al.The Journal of chemical physics. 1991, Vol 94, Num 5, pp 4080-4083, issn 0021-9606Article

Development of techniques for real-time monitoring and control in plasma etching. I, Response surface modeling of CF₄/O₂ and CF₄/H₂ etching of silicon and silicon dioxideMCLAUGHLIN, K. J; BUTLER, S. W; EDGAR, T. F et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 789-799, issn 0013-4651Article

Generic scale invariance and roughening in noisy model sandpiles and other driven interfacesGRINSTEIN, G; LEE, D.-L.Physical review letters. 1991, Vol 66, Num 2, pp 177-180, issn 0031-9007Article

Al-Ga monolayer lateral growth observed in situ by scanning electron microscopyKANISAWA, K; OSAKA, J; HIRONO, S et al.Applied physics letters. 1991, Vol 58, Num 21, pp 2363-2365, issn 0003-6951Article

Change in wettability of water on Si after ion treatment by aging under water and in airINOUE, N; KIKUCHI, M; SHIMA, T et al.Physics letters. A. 1991, Vol 157, Num 4-5, pp 299-300, issn 0375-9601Article