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Results 1 to 25 of 32237

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Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded SubstrateBOSCHKER, Jos E; MOMAND, Jamo; BRAGAGLIA, Valeria et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3534-3538, issn 1530-6984, 5 p.Article

Characterization of metal oxide nanofilm morphologies and composition by terahertz transmission spectroscopyHEILWEIL, Edwin J; MASLAR, James E; KIMES, William A et al.Optics letters. 2009, Vol 34, Num 9, pp 1360-1362, issn 0146-9592, 3 p.Article

Atomistic simulation of ag thin films on MgO(100) substrate: A template substrate for heterogeneous adsorptionOUAHAB, A; MOTTET, C; GONIAKOWSKI, J et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 035421.1-035421.10, issn 1098-0121Article

First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAsROSENAUER, A; SCHOWALTER, M; GLAS, F et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085326.1-085326.10, issn 1098-0121Article

As-deposited Y-Ba-Cu-O superconducting films on silicon at 400 °CWITANACHCHI, S; PATEL, S; KWOK, H. S et al.Applied physics letters. 1989, Vol 54, Num 6, pp 578-580, issn 0003-6951Article

Cd diffusion in In0.53Ga0.47AsAMBREE, P; GRUSKA, B.Crystal research and technology (1979). 1989, Vol 24, Num 3, pp 299-305, issn 0232-1300Article

Pulsed laser deposition of barium titanate films on siliconRASHMI NAWATHEY; VISPUTE, R. D; CHAUDHARI, S. M et al.Solid state communications. 1989, Vol 71, Num 1, pp 9-12, issn 0038-1098Article

Transparent conductive indium oxide film deposited on low temperature substrates by activated reactive evaporationMARCOVITCH, O; KLEIN, Z; LUBEZKY, I et al.Applied optics. 1989, Vol 28, Num 14, pp 2792-2795, issn 0003-6935Article

Operation of a DC-magnetron sputtering system with a third magnetic pole and its application to control of chemical composition of thin filmsFUKAMI, T; MINEMARU, T.Journal of the Faculty of Engineering. Shinshu University. 1989, Num 65, pp 45-51, issn 0037-3818Article

Photodécomposition sensibilisée au mercure du monosilane (Hg-Photo-CVD) : application au dépôt en couches minces de silicium amorphe hydrogéné (a-Si : H)Aka, Boko; Siffert, Paul.1989, 185 p.Thesis

A nonlinear stability analysis of a model equation for liquid phase electro-epitaxial growth of a dilute binary substanceWOLLKIND, D. J; SHINGMIN WANG.SIAM journal on applied mathematics (Print). 1988, Vol 48, Num 1, pp 52-78, issn 0036-1399Article

Columnar growth in thin filmsMAZOR, A; SROLOVITZ, D. J; HAGAN, P. S et al.Physical review letters. 1988, Vol 60, Num 5, pp 424-427, issn 0031-9007Article

A comparative Rutherford backscattering spectrometry and Auger electron spectroscopy depth profile study of Fe-N filmsDE RUGY, H; LANGERON, J. P; BOUQUET, S et al.Thin solid films. 1988, Vol 161, Num 1-2, pp L69-L70, issn 0040-6090Article

A growth analysis for metalorganic vapor phase epitaxy of GaAsDOI, A; IWAI, S; MEGURO, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 5, pp 795-800, issn 0021-4922, 1Article

A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxyROBERTSON, A. JR; CHIU, T. H; TSANG, W. T et al.Journal of applied physics. 1988, Vol 64, Num 2, pp 877-887, issn 0021-8979Article

A new application of soft X-ray spectroscopy to a non-destructive analysis of a film/substrate contact system: carbonized-layer (ultra-thin-film)/Si(100)IWAMI, M; KUSAKA, M; HIRAI, M et al.Surface science. 1988, Vol 199, Num 3, pp 467-475, issn 0039-6028Article

A simple and novel technique for the deposition of conducting tin dioxide filmsKARANJAI, M. K; DHRUBA DAS GUPTA.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 2, pp 356-358, issn 0022-3727Article

A study of the crystallographic and luminescent characteristics of ZnS:Mn films prepared by an RF magnetron sputtering method for AC thin-film electroluminescent devicesMATSUOKA, T; KUWATA, J; NISHIKAWA, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 4, pp 592-596, issn 0021-4922, 1Article

An altered layer model for ion assisted deposition under net sputtering erosion conditionsCARTER, G; KATARDJIEV, I. V; NOBES, M. J et al.Vacuum. 1988, Vol 38, Num 2, pp 117-121, issn 0042-207XArticle

Antiphase domains in GaAs grown on a (001)-oriented Si substrate by molecular-beam epitaxyNOGE, H; KANO, H; HASHIMOTO, M et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 2246-2248, issn 0021-8979Article

Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon filmsGUANG HAI LIN; DOYLE, J. R; MUZHIN HE et al.Journal of applied physics. 1988, Vol 64, Num 1, pp 188-194, issn 0021-8979Article

Auger electron spectroscopy technique for nitrogen depth profiling in titanium compoundsPANTEL, R; LEVY, D; NICOLAS, D et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 5, pp 2953-2956, issn 0734-2101Article

Characterization of a Langmuir-Blodgett monolayer using molecular dynamics calculationsCARDINI, G; BAREMAN, J. P; KLEIN, M et al.Chemical physics letters. 1988, Vol 145, Num 6, pp 493-498, issn 0009-2614Article

Characterization of structural and dynamical behavior in monolayers of long-chain molecules using molecular-dynamics calculationsBAREMAN, J. P; CARDINI, G; KLEIN, M. L et al.Physical review letters. 1988, Vol 60, Num 21, pp 2152-2155, issn 0031-9007Article

Characterization of thin films of Y-Ba-Cu-O on oxidized silicon with a zirconia buffer layerMOGRO-CAMPERO, A; TURNER, L. G; HALL, E. L et al.Applied physics letters. 1988, Vol 52, Num 24, pp 2068-2070, issn 0003-6951Article

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