Pascal and Francis Bibliographic Databases

Help

Search results

Your search

cc.\*:("001B60H55L")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 1804

  • Page / 73
Export

Selection :

  • and

Diffusion evaluation of Cu in NiTi Bi-layer thin film interfaceMOHRI, Maryam; NILI-AHMADABADI, Mahmoud; FLEGE, Stefan et al.Journal of alloys and compounds. 2014, Vol 594, pp 87-92, issn 0925-8388, 6 p.Article

Defects in semipolar (1122) ZnO grown on (112) LaAlO3/(La, Sr)(Al, Ta)O3 substrate by pulsed laser depositionTIAN, Jr-Sheng; WU, Yue-Han; PENG, Chun-Yen et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 12, issn 0953-8984, 125801.1-125801.7Article

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayersAKBARI-SHARBAF, Arash; BARIBEAU, Jean-Marc; XIAOHUA WU et al.Thin solid films. 2013, Vol 527, pp 38-44, issn 0040-6090, 7 p.Article

Hydrogen-induced blistering of Mo/Si multilayers: Uptake and distributionKUZNETSOV, A. S; GLEESON, M. A; BIJKERK, F et al.Thin solid films. 2013, Vol 545, pp 571-579, issn 0040-6090, 9 p.Article

The influence of annealing atmosphere on the formation and characteristics of microvoid WO3―Sb filmsJENG, Jiann-Shing.Journal of alloys and compounds. 2013, Vol 548, pp 27-32, issn 0925-8388, 6 p.Article

Transmission electron microscopy characterization of CrN films on MgO(001)HARZER, T. P; DANIEL, R; MITTERER, C et al.Thin solid films. 2013, Vol 545, pp 154-160, issn 0040-6090, 7 p.Article

Cause of the fill factor loss of a-Si:H p-i-n devices with ZnO:Al front electrode: Blocking contact vs. defect densitySANTOS, J. D; FERNANDEZ, S; CARABE, J et al.Thin solid films. 2013, Vol 548, pp 617-622, issn 0040-6090, 6 p.Article

Charge carrier transport in ZnO/CdS/CdTe/(Cu)/Ni heterojunctionsROTARU, Corneliu; VATAVU, Sergiu; FEDOROV, Vladimir et al.Thin solid films. 2013, Vol 535, pp 241-243, issn 0040-6090, 3 p.Conference Paper

Defect spectroscopy of Cu(In,Ga)Se2-based thin film solar cells on polyimide substrateURBANIAK, A; IGALSON, M; KRYSZTOPA, A et al.Thin solid films. 2013, Vol 535, pp 314-317, issn 0040-6090, 4 p.Conference Paper

Electroless deposition of Ru films on Si substrates with surface pretreatmentsCHEN, Jing-Yu; HUANG, Shiau-Lin; WU, Pu-Wei et al.Thin solid films. 2013, Vol 529, pp 426-429, issn 0040-6090, 4 p.Conference Paper

Formation of compressively strained SiGe/Si(110) heterostructures and their characterizationARIMOTO, Keisuke; OBATA, Tomoyuki; FURUKAWA, Hiroshi et al.Journal of crystal growth. 2013, Vol 362, pp 282-287, issn 0022-0248, 6 p.Conference Paper

HCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbersMOUSEL, Marina; REDINGER, Alex; DJEMOUR, Rabie et al.Thin solid films. 2013, Vol 535, pp 83-87, issn 0040-6090, 5 p.Conference Paper

In situ X-ray diffraction study of stacking fault formation in the near-surface region of transformation induced plasticity steelsRAFAJA, David; KRBETSCHEK, Christina; BORISOVA, Daria et al.Thin solid films. 2013, Vol 530, pp 105-112, issn 0040-6090, 8 p.Conference Paper

Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si EpitaxyLEATHERSICH, Jeffrey M; TUNGARE, Mihir; XIAOJUN WENG et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 833-837, issn 0361-5235, 5 p.Conference Paper

Correlation of electrolyte-derived inclusions to crystallization in the early stage of anodic oxide film growth on titaniumJAEGGI, C; PARLINSKA-WOJTAN, M; KERN, P et al.Thin solid films. 2012, Vol 520, Num 6, pp 1804-1808, issn 0040-6090, 5 p.Article

Doping induced lattice misfit in 4H-SiC homoepitaxyKALLINGER, Birgit; BERWIAN, Patrick; FRIEDRICH, Jochen et al.Journal of crystal growth. 2012, Vol 349, Num 1, pp 43-49, issn 0022-0248, 7 p.Article

Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substratesYUM, J. H; AKYOL, T; LEI, M et al.Thin solid films. 2012, Vol 520, Num 7, pp 3091-3095, issn 0040-6090, 5 p.Article

Growth of stoichiometric TiO2 thin films on Au(100) substrates by molecular beam epitaxyCALLONI, A; FERRARI, A; BRAMBILLA, A et al.Thin solid films. 2012, Vol 520, Num 11, pp 3922-3926, issn 0040-6090, 5 p.Article

Growth, microstructure and morphology of epitaxial ScGaN films : Indium Nitride and Related AlloysKNOLL, S. M; ZHANG, S; JOYCE, T. B et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 33-40, issn 1862-6300, 8 p.Article

Line defects, planar defects and voids in SrTiO3 films grown on MgO by pulsed laser and pulsed laser interval depositionTSE, Y. Y; MCMITCHELL, S. R. C; JACKSON, T. J et al.Thin solid films. 2012, Vol 520, Num 9, pp 3440-3447, issn 0040-6090, 8 p.Article

Microstructural characterization of Cu-poor Cu (In, Ga)Se2 surface layerZHANG LI; XUE, Yu-Ming; XU, Chuan-Ming et al.Thin solid films. 2012, Vol 520, Num 7, pp 2873-2877, issn 0040-6090, 5 p.Article

Strain evolution during spinodal decomposition of TiAIN thin filmsROGSTRÖM, L; ULLBRAND, J; ALMER, J et al.Thin solid films. 2012, Vol 520, Num 17, pp 5542-5549, issn 0040-6090, 8 p.Article

Three-step growth method for high quality AIN epilayersNAKARMI, M. L; CAI, B; LIN, J. Y et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 126-129, issn 1862-6300, 4 p.Article

Strain-Induced ZnO SpinterfacesONG, C. S; HERNG, T. S; HUANG, X. L et al.Journal of physical chemistry. C. 2012, Vol 116, Num 1, pp 610-617, issn 1932-7447, 8 p.Article

The effect of ion implantation on the oxidation resistance of vacuum plasma sprayed CoNiCrAlY coatingsJIE JIANG; HUAYUZHAO; XIAMINGZHOU et al.Applied surface science. 2012, Vol 261, pp 422-430, issn 0169-4332, 9 p.Article

  • Page / 73