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Electron emission from excited states of E' centers in SiO2ZATSEPIN, A. F.Journal of non-crystalline solids. 2007, Vol 353, Num 5-7, pp 590-593, issn 0022-3093, 4 p.Conference Paper

The effect of cation coordination on the properties of oxygen vacancies in FeSbO₄GRAU-CRESPO, Ricardo; MOREIRA, Ibério De P. R; ILLAS, Francesc et al.Journal of material chemistry. 2006, Vol 16, Num 20, pp 1943-1949, issn 0959-9428, 7 p.Article

First-principles study of the structure and stability of oxygen defects in zinc oxideERHART, Paul; KLEIN, Andreas; ALBE, Karsten et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085213.1-085213.7, issn 1098-0121Article

Deep levels associated with α and β dislocations in n-CdTeHÜMMELGEN, I. A.Journal of materials science letters. 1993, Vol 12, Num 7, pp 451-452, issn 0261-8028Article

A comparison of the thermal and near band-gap light-induced recoveries of EL2 from its metastable state in semiinsulating GaAsALVAREZ, A; JIMENEZ, J; CHAFAI, M et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 5004-5008, issn 0021-8979, 1Article

CNDO parameterized cluster model calculations of transition metals in diamondPASLOVSKY, L; LOWTHER, J. E.The Journal of physics and chemistry of solids. 1993, Vol 54, Num 2, pp 243-256, issn 0022-3697Article

Ceⁿ⁺ energy levels in alkaline-earth fluorides and cerium-electron, cerium-hole interactionsVISSER, R; ANDRIESSEN, J; DORENBOS, P et al.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 32, pp 5887-5910, issn 0953-8984Article

Characterization of deep-level defects in GaAs irradiated by 1 MeV electronsLAI, S. T; NENER, B. D; FARAONE, L et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 640-647, issn 0021-8979Article

Copper-related defects in In_0.53Ga_0.47As grown by liquid-phase epitaxyTILLY, L. P; GRIMMEISS, H. G; HANSSON, P. O et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 3, pp 1249-1255, issn 0163-1829Article

Deep hole trap properties of p-type ZnSe grown by molecular beam epitaxyANDO, K; KAWAGUCHI, Y; OHNO, T et al.Applied physics letters. 1993, Vol 63, Num 2, pp 191-193, issn 0003-6951Article

Deep hole traps in p-type nitrogen-doped ZnSe grown by molecular beam epitaxyHU, B; KARCZEWSKI, G; LUO, H et al.Applied physics letters. 1993, Vol 63, Num 3, pp 358-360, issn 0003-6951Article

Defects in electron-irradiated GaAlAs alloysZAIDI, M. A; MAAREF, H; ZAZOUI, M et al.Journal of applied physics. 1993, Vol 74, Num 1, pp 284-290, issn 0021-8979Article

Deformation induced deep levels in p-CdTeHÜMMELGEN, I. A; SCHRÖTER, W.Applied physics letters. 1993, Vol 62, Num 21, pp 2703-2704, issn 0003-6951Article

Native point defects in Te-rich type Hg_1-xCd_xTeWIENECKE, M; SCHENK, M; BERGER, H et al.Semiconductor science and technology. 1993, Vol 8, Num 2, pp 299-302, issn 0268-1242Article

Photoinduced defects in pseudodoped a-Si:HGOLIKOVA, O. A; IKRAMOV, R. G; KAZANIN, M. M et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 3, pp 265-267, issn 1063-7826Article

Reaction of dissociation of defect complexes accompanied by the formation of A centers in siliconMYAKEN'KAYA, G. S; GUTSEV, G. L; TYBULEWICZ, A et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 3, pp 218-223, issn 1063-7826Article

The mechanisms of electronic excitation of rare earth impurities in semiconductorsYASSIEVICH, I. N; KIMERLING, L. C.Semiconductor science and technology. 1993, Vol 8, Num 5, pp 718-727, issn 0268-1242Article

Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defectsDE SOUZA, J. P; FICHTNER, P. F. P.Journal of applied physics. 1993, Vol 74, Num 1, pp 119-122, issn 0021-8979Article

Energetics and local vibrations of the DX center in GaAsSAITO, M; OSHIYAMA, A; SUGINO, O et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 20, pp 13205-13214, issn 0163-1829Article

Gallium-related defect centers in molecular-beam-epitaxy-grown ZnSe films : influence of electric field on thermal emission of electronsHU, B; KARCZEWSKI, G; LUO, H et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 15, pp 9641-9649, issn 0163-1829Article

Hydrogen enhancement of silicon thermal donor formationLAMP, C. D; JAMES, D. J.Applied physics letters. 1993, Vol 62, Num 17, pp 2081-2083, issn 0003-6951Article

Hydrogenic donor states in semiconductor microcrystallitesTRAN THOAI, D. B.Solid state communications. 1993, Vol 85, Num 1, pp 39-43, issn 0038-1098Article

Hydrostatic pressure dependence of the Cu-acceptor level in In_0.53Ga_0.47AsGERLING, M; TILLY, L. P.Applied physics letters. 1993, Vol 62, Num 22, pp 2839-2841, issn 0003-6951Article

Inverse problem for the nonexponential deep level transient spectroscopy analysis in semiconductor materials with strong disorder : theoretical and computational aspectsBATOVSKI, D. A; HARDALOV, C. M.Journal of applied physics. 1993, Vol 74, Num 1, pp 291-295, issn 0021-8979Article