Defect induced local moment in ZnO as a consequence of Stoner mechanismKUMAR CHANDRA, Hirak; MAHADEVAN, Priya.Solid state communications. 2012, Vol 152, Num 9, pp 762-766, issn 0038-1098, 5 p.Article

Ion implantation induced defects in ZnOVINES, L; WONG-LEUNG, J; JAGADISH, C et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, pp 1481-1484, issn 0921-4526, 4 p.Conference Paper

Aluminum and nitrogen impurities in Wurtzite ZnO: first-principles studiesLI, P; DENG, Sh. H; LI, Y. B et al.Physica. B, Condensed matter. 2011, Vol 406, Num 17, pp 3125-3129, issn 0921-4526, 5 p.Article

Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystalYE, Z. R; LU, X. H; DING, G. W et al.Semiconductor science and technology. 2011, Vol 26, Num 9, issn 0268-1242, 095016.1-095019.6Article

Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopySCHIFANO, R; MONAKHOV, E. V; SVENSSON, B. G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4344-4348, issn 0921-4526, 5 p.Conference Paper

Electrical properties of semi-insulating CdTe_0:9Se_0:1:Cl crystal and its surface preparationKIM, Kihyun; HONG, Jinki; SUN UNG KIM et al.Journal of crystal growth. 2008, Vol 310, Num 1, pp 91-95, issn 0022-0248, 5 p.Article

Deep level defects in CdTe materials studied by thermoelectric effect spectroscopy and photo-induced current transient spectroscopyELHADIDY, H; FRANC, J; MORAVEC, P et al.Semiconductor science and technology. 2007, Vol 22, Num 5, pp 537-542, issn 0268-1242, 6 p.Article

Soft X-ray magnetic circular dichroism and photoemission studies of II-VI diluted ferromagnetic semiconductor Zn_1-xCr_xTeKOBAYASHI, M; ISHIDA, Y; TAKEDA, Y et al.Journal of superconductivity and novel magnetism. 2007, Vol 20, Num 6, pp 467-471, issn 1557-1939, 5 p.Conference Paper

Investigation of excitons bound to fluorine donors in ZnSePAWLIS, A; SANAKA, K; GÖTZINGER, S et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1412-1415, issn 0268-1242, 4 p.Article

Spin-flip Raman scattering studies of antimony-doped ZnSeDAVIES, J. J; WOLVERSON, D; ALIEV, G. N et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 487-490, issn 0370-1972, 4 p.Conference Paper

Analysis of ground-state zero-field splitting for Mn²⁺ in hexagonal ZnS :Mn²⁺DIE DONG; XIAO-YU, Kuang; LU WEI et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 11, pp 2121-2123, issn 0022-3697, 3 p.Article

Deep hole trap levels of Sb-doped ZnSe grown by MOVPEIDO, Toshiyuki; GOTO, Hideo.Journal of crystal growth. 2003, Vol 259, Num 3, pp 257-261, issn 0022-0248, 5 p.Article

Pressure behavior of Te isoelectronic centers in S-rich ZnS_1-xTe_x alloyLI, G. H; FANG, Z. L; SU, F. H et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 401-406, issn 0370-1972, 6 p.Conference Paper

Ab initio modeling of N-H, P-H and As-H defects in ZnSeTORRES, V. J. B; COUTINHO, J; BRIDDON, P. R et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 272-274, issn 0921-4526, 3 p.Conference Paper

CdS_xTe_1-x: bulk vapour growth, twin formation and the electrical activity of twin boundariesDUROSE, K; YATES, A. J. W; SZCZERBAKOW, A et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 16, pp 1997-2007, issn 0022-3727Article

Defect structure of Ge-doped CdTeFIEDERLE, M; BABENTSO, V; FRANCA, J et al.Journal of crystal growth. 2002, Vol 243, Num 1, pp 77-86, issn 0022-0248Article

Negatively charged donor centers in ultrathin ZnSe:N layersSTRAUF, S; MICHLER, P; GUTOWSKI, J et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 245-250, issn 0370-1972Conference Paper

Lattice sites of phosphorus in ZnMnTe: A compensation studyVAN KHOI, L. E; KACZOR, P; KOWSKI, M et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 287-290, issn 0370-1972Conference Paper

Difference in luminescence properties between Sm doped ZnS and Eu doped ZnSABIKO, Y; NAKAYAMA, N; AKIMOTO, K et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 339-342, issn 0370-1972Conference Paper

Intrinsic defects of ZnS epitaxial layers grown by MOVPEYOSHINO, K; KOMAKI, H; PRETE, P et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 351-354, issn 0370-1972Conference Paper

Quantum confined atoms of doped ZnO nanocrystalsBHARGAVA, R. N; CHHABRA, V; SOM, T et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 2, pp 897-901, issn 0370-1972Conference Paper

Spin selection rules in radiative and nonradiative recombination processes in bulk crystals and in thin films of II-VI compoundsGODLEWSKI, M; IVANOV, V. Yu; KHACHAPURIDZE, A et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 533-542, issn 0370-1972Conference Paper

Metastable defect characterization in Cd_0.9Mn_0.1Te:InPLACZEK-POPKO, E; BECLA, P.Physica. B, Condensed matter. 2001, Vol 308-10, pp 954-957, issn 0921-4526Conference Paper

Defect identification by means of electric field gradient calculationLANY, S; OSTHEIMER, V; WOLF, H et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 980-984, issn 0921-4526Conference Paper

Simultaneous photo-excitation of Li acceptor and shallow donors in ZnSeNAKATA, H; YAMADA, K; ITAZAKI, Y et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 277-281, issn 0921-4526Conference Paper