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Results 1 to 25 of 561

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Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulationsJUND, Philippe; VIENNOIS, Romain; COLINET, Catherine et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 3, issn 0953-8984, 035403.1-035403.10Article

Ab initio calculations of the hydroxyl impurities in BaF2HONGTING SHI; YAN WANG; RAN JIA et al.Computational materials science. 2011, Vol 50, Num 11, pp 3101-3104, issn 0927-0256, 4 p.Article

Investigating material trends and lattice relaxation effects for understanding electron transfer phenomena in rare-earth-doped optical materialsTHIEL, C. W; CONE, R. L.Journal of luminescence. 2011, Vol 131, Num 3, pp 386-395, issn 0022-2313, 10 p.Conference Paper

Hydrogen in ZnOLAVROV, E. V.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 76030J.1-76030J.10Conference Paper

Native defects in oxide semiconductors: a density functional approachOBA, Fumiyasu; CHOI, Minseok; TOGO, Atsushi et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 38, issn 0953-8984, 384211.1-384211.9Conference Paper

Geometry, electronic structure and thermodynamic stability of intrinsic point defects in indium oxideAGOSTON, Péter; ERHART, Paul; KLEIN, Andreas et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 45, issn 0953-8984, 455801.1-455801.11Article

N-doping of pentacene by decamethylcobaltoceneCHAN, Calvin K; KAHN, Antoine.Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 1, pp 7-13, issn 0947-8396, 7 p.Article

First-principles study of oxygen vacancies in Lu2SiO5BO LIU; ZEMING QI; MU GU et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 43, issn 0953-8984, 436215.1-436215.8Article

Ultrafast electronic dynamics of monodisperse PbS and CdS nanoparticles/nanorods : Effects of size on nonlinear relaxationFANXIN WU; JUNG HO YU; JOO, Jin et al.Optical materials (Amsterdam). 2007, Vol 29, Num 7, pp 858-866, issn 0925-3467, 9 p.Article

Anomaly enhancement of the dislocation velocity in SiCSAVINI, Gianluca; SAVINI, Giancarlo; MAROCCHI, Angela et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 62-66, issn 0921-4526, 5 p.Conference Paper

Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) methodTAISHI, T; HAYASHI, T; BAMBA, N et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 437-440, issn 0921-4526, 4 p.Conference Paper

n-type doping of CuInSe2 and CuGaSe2PERSSON, Clas; ZHAO, Yu-Jun; LANY, Stephan et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 035211.1-035211.14, issn 1098-0121Article

Defect contributions to conductivity in poly(3-hexylthiophene)?CARUSO, A. N; FENG, D.-Q; LOSOVYJ, Ya. B et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 6, pp 1321-1330, issn 0370-1972, 10 p.Article

Energy levels and intensity parameters of Ho3+ ions in Y3Al5O12 and Lu3Al5O12WALSH, Brian M; GREW, Gary W; BARNES, Norman P et al.The Journal of physics and chemistry of solids. 2006, Vol 67, Num 7, pp 1567-1582, issn 0022-3697, 16 p.Article

Nephelauxetic effect for the isoelectronic 3d3-ions (Cr3+, Mn4+, Fe5+) in SrTiO3BRIK, M. G; AVRAM, N. M.The Journal of physics and chemistry of solids. 2006, Vol 67, Num 7, pp 1599-1604, issn 0022-3697, 6 p.Article

Intrinsic and extrinsic point-defects in vapor transport grown ZnO bulk crystalsPFISTERER, D; HOFMANN, D. M; SANN, J et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 767-770, issn 0921-4526, 4 p.Conference Paper

Band-gap narrowing of TiO2 films induced by N-dopingNAKANO, Y; MORIKAWA, T; OHWAKI, T et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 823-826, issn 0921-4526, 4 p.Conference Paper

Unique behavior of F-centers in high-k Hf-based oxidesUMEZAWA, N; SHIRAISHI, K; OHNO, T et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 392-394, issn 0921-4526, 3 p.Conference Paper

Luminescence and energy transfer processes of Sm3+ in K5Li2LaF10:Sm3+-K5Li2SmF10 single crystalsSOLARZ, P; RYBA-ROMANOWSKI, W.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075105.1-075105.8, issn 1098-0121Article

Energy levels of lanthanide ions in a Lu2Si2O7 hostPIDOL, L; VIANA, B; GALTAYRIES, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 12, pp 125110.1-125110.9, issn 1098-0121Article

First-principles study of interstitial oxygen in potassium dihydrogen phosphate crystalsKUNPENG WANG; CHANGSHUI FANG; JIANXIU ZHANG et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 18, pp 184105.1-184105.5, issn 1098-0121Article

Synchrotron-laser pump-probe luminescence spectroscopy : correlation of electronic defect states with x-ray absorption in wide-gap solidsPOOLTON, N. R. J; HAMILTON, B; EVANS, D. A et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 9, pp 1478-1484, issn 0022-3727, 7 p.Article

Electronic states of lanthanide in the ternary thiogallate CaGa2S4NOMURA, Shigetaka; TAKIZAWA, Takeo; ENDO, Saburo et al.The Journal of physics and chemistry of solids. 2005, Vol 66, Num 11, pp 2090-2093, issn 0022-3697, 4 p.Conference Paper

Anomalous capture and emission from internal surfaces of semiconductor voids : Nanopores in SiCLOOK, D. C; FANG, Z-Q; SOLOVIEV, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 19, pp 195205.1-195205.4, issn 1098-0121Article

Cu2+ impurities in fluorite-type crystals: Mechanisms favoring an off-center motionGARCIA FERNANDEZ, P; ARAMBURU, J. A; BARRIUSO, M. T et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 17, pp 174110.1-174110.8, issn 1098-0121Article

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