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First principles studies on hydrogen storage in single-walled carbon nanotube functionalized with TiO₂KANMANI, M; LAVANYA, R; SILAMBARASAN, D et al.Solid state communications. 2014, Vol 183, pp 1-7, issn 0038-1098, 7 p.Article

Ternary mixed crystal effects on electron-interface optical phonon interactions in In_xGa_1―xN/GaN quantum wellsHUANG, Wen-Deng; CHEN, Guang-De; YE, Hong-Gang et al.Physica. B, Condensed matter. 2013, Vol 410, pp 33-41, issn 0921-4526, 9 p.Article

Donor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz regionYILDIRIM, Hasan; ASLAN, Bulent.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085017.1-085017.6Article

Doping dependence of electron populations in optically pumped step quantum well structuresLIU, Dong-Feng; LIN, Yi-Xin.Semiconductor science and technology. 2011, Vol 26, Num 2, issn 0268-1242, 025002.1-025002.5Article

Electron spectrum of δ-doped quantum wells by the Thomas―Fermi method at finite temperaturesGRIMALSKY, V; GAGGERO-SAGER, L. M; KOSHEVAYA, S et al.Physica. B, Condensed matter. 2011, Vol 406, Num 11, pp 2218-2223, issn 0921-4526, 6 p.Article

Exact-exchange spin-density functional theory of Wigner localization and phase transitions in quantum ringsARNOLD, Thorsten; SIEGMUND, Marc; PANKRATOV, Oleg et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 33, issn 0953-8984, 335601.1-335601.10Article

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperaturesLEONTIADOU, M. A; LITVINENKO, K. L; CLOWES, S. K et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 3, issn 0953-8984, 035801.1-035801.5Article

Quantum lifetimes and momentum relaxation of electrons and holes in Ga_0.7In_0.3N_0.015As_0.985/GaAs quantum wellsTIRAS, E; BALKAN, N; ARDALI, S et al.Philosophical magazine (2003. Print). 2011, Vol 91, Num 4-6, pp 628-639, issn 1478-6435, 12 p.Article

Effect of hydrostatic pressure on the donor impurity states in GaN/AlGaN asymmetric coupled quantum wellsCONGXIN XIA; ZAIPING ZENG; SHUYI WEI et al.Physica. B, Condensed matter. 2010, Vol 405, Num 16, pp 3272-3275, issn 0921-4526, 4 p.Article

Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum wellPATTAMMAL, M; PETER, A. John.Applied surface science. 2010, Vol 256, Num 22, pp 6748-6752, issn 0169-4332, 5 p.Article

Quantum computing by optical control of electron spinsLIU, Ren-Bao; WANG YAO; SHAM, L. J et al.Advances in physics. 2010, Vol 59, Num 5, pp 703-802, issn 0001-8732, 100 p.Article

Fractal spectrum of charge carriers in quasiperiodic graphene structuresSENA, S. H. R; PEREIRA, J. M; FARIAS, G. A et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 46, issn 0953-8984, 465305.1-465305.7Article

Random approach to determine the broadening of intersubband and interband transitions in (In)GaN/Al(In)N quantum wellsGLADYSIEWICZ, Marta; KUDRAWIEC, Robert.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 48, issn 0953-8984, 485801.1-485801.8Article

Density functional study of collective electron localization : detection by persistent currentSIEGMUND, Marc; HOFMANN, Markus; PANKRATOV, Oleg et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 15, issn 0953-8984, 155602.1-155602.8Article

Influence of the illumination on the subband structure and occupation in Al_xGa_1―xN/GaN heterostructuresNING TANG; BO SHEN; SHANG, Li-Yan et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 4, pp 953-957, issn 0947-8396, 5 p.Article

Simultaneous effects of pressure and laser field on donors in GaAs/Ga_1―xAl_xAs quantum wellsESEANU, N; NICULESCU, E. C; BURILEANU, L. M et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 8, pp 1386-1392, issn 1386-9477, 7 p.Article

Effects of hydrostatic pressure on the self-polarization in GaAs/Ga_1-xAl_x As quantum wells under the electric fieldERDOGAN, I; AKANKAN, O; AKBAS, H et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 42, Num 2, pp 136-140, issn 1386-9477, 5 p.Article

Exact electronic transport in an alternating A/B quantum dot arrayLU, X. H; TENG, B. H; LIU, H et al.The European physical journal. B, Condensed matter physics (Print). 2009, Vol 72, Num 4, pp 497-502, issn 1434-6028, 6 p.Article

Photoluminescence study of nitrogen effects on confined states in GaAs_1-xN_x/GaAs quantum wellsDHIFALLAH, I; ALOULOU, S; BARDAOUI, A et al.EPJ. Applied physics (Print). 2009, Vol 47, Num 3, issn 1286-0042, 30302.p1-30302.p6Article

Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructuresALESHKIN, V. Ya; ANTONOV, A. V; KOZLOV, D. V et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4974-4976, issn 0921-4526, 3 p.Conference Paper

Quantum entanglement in elliptical quantum corralsNIZAMA, M; FRUSTAGLIA, D; HALLBERG, K et al.Physica. B, Condensed matter. 2009, Vol 404, Num 18, pp 2819-2821, issn 0921-4526, 3 p.Conference Paper

Simultaneous effects of pressure and temperature on donor binding energy in Pöschl―Teller quantum wellHAKIMYFARD, Alireza; BARSEGHYAN, M. G; DUQUE, C. A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5159-5162, issn 0921-4526, 4 p.Conference Paper

Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wellsLEV, S. B; SUGAKOV, V. I; VERTSIMAKHA, G. V et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 9, pp 2899-2903, issn 1386-9477, 5 p.Article

Quantum well states, resonances and stability of metallic overlayersOGANDO, E; ZABALA, N; CHULKOV, E. V et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 31, issn 0953-8984, 315002.1-31502.8Article