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Results 1 to 25 of 1073

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Spatial distribution of spin polarization in a channel on the surface of a topological insulatorXIAOYING ZHOU; HUAIHUA SHAO; YIMAN LIU et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 18, issn 0953-8984, 185301.1-185301.6Article

Initiating polarity inversion in GaN growth using an AIN interlayerHITE, Jennifer K; TWIGG, Mark E; MASTRO, Michael A et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1504-1506, issn 1862-6300, 3 p.Article

Resolving the controversy on the pH sensitivity of diamond surfacesDANKERL, M; REITINGER, A; STUTZMANN, M et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 1, pp 31-33, issn 1862-6254, 3 p.Article

Surface conductivity of insulators: two-dimensional cylindrical symmetryHOLCOMBE, S. R; LIESEGANG, J; SMITH, E. R et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 1, issn 0953-8984, 016002.1-016002.11Article

Mechanism of formation of highly conductive layer on ZnO crystal surfaceMARKEVICH, I. V; KUSHNIRENKO, V. I; BORKOVSKA, L. V et al.Solid state communications. 2005, Vol 136, Num 8, pp 475-478, issn 0038-1098, 4 p.Article

Switching between one and two dimensions : Conductivity of Pb-induced chain structures on Si(557)TEGENKAMP, C; KALLASSY, Z; PFNÜR, H et al.Physical review letters. 2005, Vol 95, Num 17, pp 176804.1-176804.4, issn 0031-9007Article

Retarded surface photovoltage response from dye molecules adsorbed on metal oxide surfacesDITTRICH, Th.Physica status solidi. A. Applied research. 2004, Vol 201, Num 11, pp R69-R71, issn 0031-8965Article

Effect of ultraviolet irradiation on surface recombination velocity in silicon wafersBUCZKOWSKI, A; ROZGONYI, G. A; SHIMURA, F et al.Japanese journal of applied physics. 1993, Vol 32, Num 2B, pp L218-L221, issn 0021-4922, 2Article

Nondestructive diagnostic method using ac surface photovoltage for detecting metallic contaminants in silicon wafersSHIMIZU, H; MUNAKATA, C.Journal of applied physics. 1993, Vol 73, Num 12, pp 8336-8339, issn 0021-8979Article

Surface conductance in semi-insulating GaAsMARES, J. J; KRISTOFIK, J; SMID, V et al.Semiconductor science and technology. 1992, Vol 7, Num 1, pp 119-124, issn 0268-1242Article

Surface structures and conductance at epitaxial growths of Ag and Au on the Si(111) surfaceHASEGAWA, S; INO, S.Physical review letters. 1992, Vol 68, Num 8, pp 1192-1195, issn 0031-9007Article

Accumulated space-charge in stationary- and steady-stateKUZNICKI, Z. T.Journal de physique. III (Print). 1992, Vol 2, Num 12, pp 2349-2371, issn 1155-4320Article

Effect of ambient surface resistance of diamond films during cooling after depositionMORI, Y; EIMORI, N; HATTA, A et al.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp L1718-L1720, issn 0021-4922, 2Article

A poisson solver for spreading resistance analysisDICKEY, D. H.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 438-441, issn 0734-211XConference Paper

Concerning the role of dipolar disorder on charge transport in molecularly doped polymersBORSENBERGER, P. M; BÄSSLER, H.The Journal of chemical physics. 1991, Vol 95, Num 7, pp 5327-5331, issn 0021-9606Article

Macroscopic variations of surface potentials of conductorsCAMP, J. B; DARLING, T. W; BROWN, R. E et al.Journal of applied physics. 1991, Vol 69, Num 10, pp 7126-7129, issn 0021-8979, 4 p.Article

Complex admittance of surface oxide on metastable niobium super-fine particlesOBARA, K; HIROSE, T.Solid state ionics. 1991, Vol 47, Num 3-4, pp 337-342, issn 0167-2738Article

An analysis of AC surface photovoltages for obtaining surface recombination velocities in silicon wafersMUNAKATA, C.Semiconductor science and technology. 1990, Vol 5, Num 3, pp 206-210, issn 0268-1242, 5 p.Article

Nonclassical scattering dynamics in the quantum hall regimeRIESS, J.Physical review. B, Condensed matter. 1990, Vol 41, Num 8, pp 5251-5257, issn 0163-1829Article

Selective equilibration among the current-carrying states in the quantum hall regimeALPHENAAR, B. W; MCEUEN, P. L; WHEELER, R. G et al.Physical review letters. 1990, Vol 64, Num 6, pp 677-680, issn 0031-9007Article

Integer quantum hall effect in magnetic and electric fields of arbitrary orientationsGOROSHCHENKO, S. Y.Physica status solidi. B. Basic research. 1990, Vol 159, Num 2, pp K55-K58, issn 0370-1972Article

Investigation of the influence of chemical treatment of InP on the surface recombination velocity by the Raman light scattering methodBELOUSOV, M. V; GORELENOK, A. T; DAVYDOV, V. YU et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 12, pp 1349-1351, issn 0038-5700, 3 p.Article

Electron tunneling time measured by photoluminescence excitation correlation spectroscopyJACKSON, M. K; JOHNSON, M. B; CHOW, D. H et al.Applied physics letters. 1989, Vol 54, Num 6, pp 552-554, issn 0003-6951Article

Electrical effects of atomic hydrogen incorporation in GaAs-on-SiZAVADA, J. M; PEARTON, S. J; WILSON, R. G et al.Journal of applied physics. 1989, Vol 65, Num 1, pp 347-353, issn 0021-8979, 7 p.Article

Highly mobile oxygen holes in magnesium oxideFREUND, M. M; FREUND, F; BATLLO, F et al.Physical review letters. 1989, Vol 63, Num 19, pp 2096-2099, issn 0031-9007Article

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