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Characterization of the interface between an Fe-Cr alloy and the p-type thermoelectric oxide Ca3Co4O9HOLGATE, Tim C; LI HAN; NINGYU WU et al.Journal of alloys and compounds. 2014, Vol 582, pp 827-833, issn 0925-8388, 7 p.Article

The study of open circuit voltage in Ag/Bi0.9La0.1FeO3/La0.1Sr0.3MnO3 heterojunction structureGAO, R. L; YANG, H. W; CHEN, Y. S et al.Physica. B, Condensed matter. 2013, Vol 432, pp 111-115, issn 0921-4526, 5 p.Article

A closed form for the electrostatic interaction between two rod-like charged objectsASKARI, M; ABOUIE, J.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 15, issn 0953-8984, 155103.1-155103.6Article

Capacitance-voltage and applications and materials science impedance-spectroscopy characteristics of nanoplate EISOI capacitors : Engineering of Functional InterfacesABOUZAR, Maryam H; MORITZ, Werner; SCHÖNING, Michael J et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 6, pp 1327-1332, issn 1862-6300, 6 p.Article

Development and characterization of EIS structures based on SiO2 micropillars and pores before and after their functionalization with phosphonate films : Engineering of Functional InterfacesHOFMANN, Martina; CATTANI-SCHOLZ, Anna; DALMAU MALLORQUI, Anna et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 6, pp 1333-1339, issn 1862-6300, 7 p.Article

Electrochemical gate-controlled electron transport of redox-active single perylene bisimide molecular junctions : The conductivity of single molecules and supramolecular architecturesLI, C; MISHCHENKO, A; LI, Z et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 37, issn 0953-8984, 374122.1-374122.11Article

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor filmsKOSTSOVA, N. E; KOSTSOV, E. G.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 13, issn 0022-3727, 135410.1-135410.7Article

The non-linear response of molecular junctions : the polaron model revisited : The conductivity of single molecules and supramolecular architecturesGALPERIN, Michael; NITZAN, Abraham; RATNER, Mark A et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 37, issn 0953-8984, 374107.1-374107.6Article

The role of changing contact in sliding triboelectrificationIRELAND, Peter M.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 2, issn 0022-3727, 025305.1-025305.11Article

Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using rutherford backscattering spectroscopyHU, C. Y; DING, Z. B; QIN, Z. X et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1261-1266, issn 0268-1242, 6 p.Article

Characteristics of metal-silicon carbide tunnel contactAROUTIOUNIAN, V. M; BUNIATYAN, V. V; SOUKIASSIAN, P. G et al.Journal de physique. IV. 2006, Vol 132, pp 137-139, issn 1155-4339, 3 p.Conference Paper

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurementsWANG, D; UEDA, A; TAKADA, H et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 411-415, issn 0921-4526, 5 p.Conference Paper

Electrical properties of doped 3-tetradecylpolypyrrole/metal devicesBOUSSOUALEM, M; KING, R. C. Y; BUISINE, J. M et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 4, pp 773-777, issn 0947-8396, 5 p.Article

Demonstration of a GaN-spacer high electron mobility transistor with low alloy scatteringPALACIOS, T; SHEN, L; KELLER, S et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 5, pp 837-840, issn 0031-8965, 4 p.Conference Paper

Buried tungsten silicide layer in silicon on insulator substrate by Smart-Cut®LUO, S. H; LIU, W. L; ZHANG, M et al.Semiconductor science and technology. 2004, Vol 19, Num 11, pp 1329-1332, issn 0268-1242, 4 p.Article

Ohmic contacts for high power LEDsHO WON JANG; JONG KYU KIM; SOO YOUNG KIM et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 12, pp 2831-2836, issn 0031-8965, 6 p.Conference Paper

Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approachBARKER, John R; WATLING, Jeremy R.Microelectronic engineering. 2002, Vol 63, Num 1-3, pp 97-103, issn 0167-9317Conference Paper

Experimental studies of electronic transport in semiconductor quantum dot structuresBIRD, J. P; ISHIBASHI, K; AOYAGI, Y et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 709-712, issn 0038-1101Conference Paper

Current-voltage characteristics of an Au/Pb2CrO5/Cr sandwiched-structure deviceTODA, K; YOSHIDA, S; IKENAGA, H et al.Journal of materials science letters. 1993, Vol 12, Num 7, pp 478-479, issn 0261-8028Article

Edge-state transport and its experimental consequences in high magnetic fieldsHAUG, R. J.Semiconductor science and technology. 1993, Vol 8, Num 2, pp 131-153, issn 0268-1242Article

Aharonov-Bohm effect in a single quantum barrierTAKAGAKI, Y; FERRY, D. K.Physical review. B, Condensed matter. 1993, Vol 47, Num 15, pp 9913-9916, issn 0163-1829Article

Aharonov-Bohm effect in the system of two tunnel junctionsNAZAROV, Y. V.Physical review. B, Condensed matter. 1993, Vol 47, Num 5, pp 2768-2774, issn 0163-1829Article

Analytical approach to the Camley-Barnas theory for giant magnetoresistance in magnetic layered structuresLIU, M; XING, D. Y.Physical review. B, Condensed matter. 1993, Vol 47, Num 18, pp 12272-12275, issn 0163-1829Article

Ballistic conductor connected to disordered reservoirs : suppression of the mesoscopic conductance fluctuationsMASLOV, D. L; BARNES, C; KIRCZENOW, G et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 4, pp 2543-2552, issn 0163-1829Article

Band offset, persistent photoconductivity and temperature dependence of conductivity in μc-Si:H/a-Si:H multilayersLIANGHUAN FENG; JUN LIU; XINMIN ZHOU et al.Superlattices and microstructures. 1993, Vol 13, Num 1, pp 87-91, issn 0749-6036Article

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