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Results 1 to 25 of 7907

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Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO filmsDINGLIN XU; YING XIONG; MINGHUA TANG et al.Journal of alloys and compounds. 2014, Vol 584, pp 269-272, issn 0925-8388, 4 p.Article

Carrier emission from defects in intrinsic hydrogenated amorphous silicon studied by junction-capacitance methodsDARWICH, R.Journal of non-crystalline solids. 2013, Vol 381, pp 35-39, issn 0022-3093, 5 p.Article

Synthesis and characterization of one-step electrodeposited CuIn(1―x)GaxSe2/Mo/glass films at atmospheric conditionsBAMIDURO, O; CHENNAMADHAVA, G; MUNDLE, R et al.Solar energy. 2011, Vol 85, Num 3, pp 545-552, issn 0038-092X, 8 p.Article

Manifestation of quantum confinement in transport properties of ultrathin metallic filmsFEDOROV, Dmitry V; ZAHN, Peter; MERTIG, Ingrid et al.Thin solid films. 2007, Vol 515, Num 17, pp 6921-6926, issn 0040-6090, 6 p.Article

Photoconductive properties of ZnO thin films grown by pulsed laser depositionZHENG, X. G; LI, Q. Sh; HU, W et al.Journal of luminescence. 2007, Vol 122-23, pp 198-201, issn 0022-2313, 4 p.Conference Paper

Probing molecule-metal bonding in molecular junctions by inelastic electron tunneling spectroscopyKULA, Mathias; JUN JIANG; YI LUO et al.Nano letters (Print). 2006, Vol 6, Num 8, pp 1693-1698, issn 1530-6984, 6 p.Article

Physical properties of low-dimensional systems. Qasi-one-dimensional conductors and Langmuir-Blodgett filmsIVANOV, S. N; GALCHENKOV, L. A; NAD, F. YA et al.Journal of communications technology & electronics. 1994, Vol 39, Num 4, pp 83-106, issn 1064-2269Article

Characteristics of heavily carbon-doped GaAs by LPMOCVD and critical layer thicknessKIM, S.-I; KYUNG SOOK EOM; YONG KIM et al.Journal of crystal growth. 1993, Vol 126, Num 2-3, pp 441-446, issn 0022-0248Article

Electrical resistivity of crystalline Sb2Se3ABD EL-SALAM, F; AFIFI, M. A; ABD EL-WAHABB, E et al.Vacuum. 1993, Vol 44, Num 2, pp 111-116, issn 0042-207XArticle

Photomagnetic effect and photoconductivity of thin epitaxial CdxHg1-xTe/CdTe filmsSTUDENIKIN, S. A; PANAEV, I. A; KOSTYUCHENKO, V. Y et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 5, pp 409-415, issn 1063-7826Article

Electrical and microstructural properties of BaTiO3 thin films on p-Si substrates grown by metalorganic chemical vapor depositionKIM, T. W; JUNG, M; YOON, Y. S et al.Solid state communications. 1993, Vol 86, Num 9, pp 565-568, issn 0038-1098Article

Electrical oscillations in the region of multivalued electron distribution in epitaxial n-Si filmsALEKSEEVA, Z. M; DANYUK, D. L; SARBEY, O. G et al.Solid state communications. 1993, Vol 86, Num 7, pp 451-453, issn 0038-1098Article

In situ process evaluation during hydrogen plasma etching of a-Si:H films by microwave detected transient photoconductivity measurementsNEITZERT, H. C; HIRSCH, W; KUNST, M et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7446-7452, issn 0021-8979, 1Article

Low-energy oxygen ion bombardment effect on BaTiO3 thin films grown by multi-ion-beam reactive sputtering techniquePENG, C.-J; HU, H; KRUPANIDHI, S. B et al.Applied physics letters. 1993, Vol 63, Num 6, pp 734-736, issn 0003-6951Article

Metalorganic chemical vapor deposition of TiN films for advanced metallizationSANDHU, G. S; MEIKLE, S. G; DOAN, T. T et al.Applied physics letters. 1993, Vol 62, Num 3, pp 240-242, issn 0003-6951Article

Study of the effect of Sn doping on the electronic transport properties of thin film indium oxideSHIGESATO, Y; PAINE, D. C.Applied physics letters. 1993, Vol 62, Num 11, pp 1268-1270, issn 0003-6951Article

Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin filmsSHIGESATO, Y; PAINE, D. C; HAYNES, T. E et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3805-3811, issn 0021-8979Article

Interaction of NO2 with lutetium bisphthalocyanine thin filmsPAULY, A; BLANC, J. P; DOGO, S et al.Synthetic metals. 1993, Vol 57, Num 1, pp 3754-3759, issn 0379-6779Conference Paper

On the reproducibility of the electrical characteristics of Langmuir monolayersOLIVEIRA, O. N; CAVALLI, A.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 33A, pp A307-A308, issn 0953-8984, SUPConference Paper

Drift mobility of amorphous semiconductors measured by the traveling-wave techniqueJOHANSON, R. E.Physical review. B, Condensed matter. 1992, Vol 45, Num 8, pp 4089-4112, issn 0163-1829Article

Electrical resistivity and stoichiometry of KxC60 filmsKOCHANSKI, G. P; HEBARD, A. F; HADDON, R. C et al.Science (Washington, D.C.). 1992, Vol 255, Num 5041, pp 184-186, issn 0036-8075Article

Breakdown of the semiclassical description of hot-electron dynamics in SiO2EKLUND, E. A; MCFEELY, F. R; CARTIER, E et al.Physical review letters. 1992, Vol 69, Num 9, pp 1407-1410, issn 0031-9007Article

Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxySTOCKMAN, S. A; HÖFLER, G. E; BAILLARGEON, J. N et al.Journal of applied physics. 1992, Vol 72, Num 3, pp 981-987, issn 0021-8979Article

D.c. conduction studies on thermally evaporated neodymium oxide thin filmsKANNAN, M. D; NARAYANDASS, S. K; BALASUBRAMANIAN, C et al.Journal of materials science. 1992, Vol 27, Num 18, pp 5040-5044, issn 0022-2461Article

Dependence of the properties of boron-trifluoride-based amorphous silicon carbide on preparation conditionsGUTIERREZ, M. T; CARABE, J; GANDIA, J. J et al.Journal of applied physics. 1992, Vol 71, Num 12, pp 6140-6145, issn 0021-8979Article

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