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Results 1 to 25 of 6271

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Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopyBELYAEV, A. E; STRELCHUK, V. V; NIKOLENKO, A. S et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105011.1-105011.6Article

Electrical switching and memory phenomena observed in redox dendrimer thin filmsLI, J. C.Thin solid films. 2009, Vol 517, Num 11, pp 3385-3388, issn 0040-6090, 4 p.Article

Performance characterization of screen printed radio frequency identification antennas with silver nanopasteSHIN, Dong-Youn; LEE, Yongshik; CHUNG HWAN KIM et al.Thin solid films. 2009, Vol 517, Num 21, pp 6112-6118, issn 0040-6090, 7 p.Article

Silver particle carbon-matrix composites as thick films for electrical applicationsHSU, Yuan-Chan; CHUNG, D. D. L.Journal of electronic materials. 2007, Vol 36, Num 9, pp 1188-1192, issn 0361-5235, 5 p.Article

Study on electrical conduction of viologen derivatives using scanning tunneling microscopyLEE, Nam-Suk; SHIN, Hoon-Kyu; QIAN, Dong-Jin et al.Thin solid films. 2007, Vol 515, Num 12, pp 5163-5166, issn 0040-6090, 4 p.Conference Paper

Electrical conductivity measurements in evaporated tin sulphide thin filmsDERAMAN, K; SAKRANI, S; ISMAIL, B. B et al.International journal of electronics. 1994, Vol 76, Num 5, pp 917-922, issn 0020-7217Conference Paper

Charge-transfer processes in Buckminsterfullerene filmsMORT, J; MACHONKIN, M; CHEN, I et al.Philosophical magazine letters. 1993, Vol 67, Num 2, pp 77-83, issn 0950-0839Article

Conductance in nanometer scale poly-Si wire gate MOS field effect transistorsTANG, Y. S; JIN, G; WILKINSON, C. D. W et al.Solid state communications. 1993, Vol 85, Num 3, pp 189-192, issn 0038-1098Article

Electrical and optical studies in some Bi doped amorphous chalcogenide thin filmsSEDEEK, K; FADEL, M.Thin solid films. 1993, Vol 229, Num 2, pp 223-226, issn 0040-6090Article

Photogeneration mechanism of charged carriers in copper-phthalocyanine thin filmsYAMAMOTO, K; EGUSA, S; SUGIUCHI, M et al.Solid state communications. 1993, Vol 85, Num 1, pp 5-10, issn 0038-1098Article

Physical properties of semi-insulating polycrystalline silicon. I: Structure, electronic properties, and electrical conductivityBRÜESCH, P; STOCKMEIER, T; STUCKI, F et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7677-7689, issn 0021-8979, 1Article

Planar-doping of molecular beam epitaxy grown ZnSe with plasma-excited nitrogenMATSUMOTO, S; TOSAKA, H; YOSHIDA, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 2B, pp L229-L232, issn 0021-4922, 2Article

Structural and electrical study of epitaxially realigned Sb-doped polycrystalline Si filmsCACCIATO, A; BENYAÏCH, F; SPINELLA, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 18, Num 3, pp 289-294, issn 0921-5107Article

Etude de la résistivité de couches minces polycristallines de WSe2 = Study of resistivity of polycrystal WSe2 thin filmsBERNEDE, J. C; BENHIDA, S; MORSLI, M et al.Le Vide, les couches minces. 1993, Vol 49, Num 265, pp 1-11, issn 0223-4335Article

Atmosphere sensitive photoconductivity of C60 thin prepared in high vacuumMINAMI, N; SATO, M.Synthetic metals. 1993, Vol 56, Num 2-3, pp 3092-3097, issn 0379-6779Conference Paper

Langmuir-Blodgett films of charge transfer complexes of bisethylenedioxytetrathiafulvalene : alkytetracyanoquinodimethaneNAKAMURA, T; YUNOME, G; AZUMI, R et al.Synthetic metals. 1993, Vol 57, Num 1, pp 3853-3858, issn 0379-6779Conference Paper

Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitrideKIM, C. H; KWON, S. D; CHOE, B. D et al.Applied surface science. 1993, Vol 65-66, pp 858-862, issn 0169-4332Conference Paper

Depth non-uniformities in thin CdTe layers grown by MBE on InSb substratesASHENFORD, D. E; DEVINE, P; HOGG, J. H. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 16, Num 1-3, pp 191-194, issn 0921-5107Conference Paper

Fractal property for the resistance of deposited filmsNAKAMURA, M.Journal of the Physical Society of Japan. 1992, Vol 61, Num 1, pp 89-91, issn 0031-9015Article

Intrinsic performance limits in transparent conducting oxidesBELLINGHAM, J. R; PHILLIPS, W. A; ADKINS, C. J et al.Journal of materials science letters. 1992, Vol 11, Num 5, pp 263-265, issn 0261-8028Article

The nature of extrinsic photoconductivity in diamond thin filmsOKUMURA, K; MORT, J; MACHONKIN, M. A et al.Philosophical magazine letters. 1992, Vol 65, Num 2, pp 105-112, issn 0950-0839Article

Oxidation of molybdenum silicide thin film temperature sensorsHO, C. H; PRAKASH, S; DOERR, H. J et al.Thin solid films. 1992, Vol 207, Num 1-2, pp 294-301, issn 0040-6090Article

Photocurrent in thin YBa2Cu3O6 films on sapphireULLRICH, B; KULAC, I; PINT, H et al.Japanese journal of applied physics. 1992, Vol 31, Num 7A, pp L856-L859, issn 0021-4922, 2Article

Resonant photoemission study at the C-1s threshold of solid C60MOLODTSOV, S. L; GUTIERREZ, A; DOMKE, M et al.Europhysics letters (Print). 1992, Vol 19, Num 5, pp 369-373, issn 0295-5075Article

Behaviour of molybdenum diboride in resistive thick filmAKULOVA, L. T; VLASOVA, M. V; VOROPAEVA, I. V et al.Journal of materials science. 1992, Vol 27, Num 12, pp 3293-3296, issn 0022-2461Article

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